Growth of Ag micro/nanoparticles using stress migration from multilayered metallic structure

Lu, Yebo; Li, Yuan; Saka, Masumi

doi:10.1016/j.apsusc.2015.06.037

Cited by 8 publications

(5 citation statements)

References 20 publications

(23 reference statements)

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“…As a result, a stress gradient is generated from the grain boundary to the inside of the grain, which becomes the driving force behind the atomic diffusion caused by the SM mechanism. 8,18 This mechanism was consistent with the growth mechanism of silver nanoparticles due to SM. Let us consider the atomic diffusion, that is, the number of Ag atoms passing through unit area in unit time, in a silver thin film due to SM.…”

Section: Discussionsupporting

confidence: 75%

Morphological evolution and migration behavior of silver thin films on flexible substrates during thermal cycle testing

Sun

et al. 2018

Advances in Mechanical Engineering

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To understand morphological evolution and migration behavior caused by stress migration and thermal fatigue of silver thin films on flexible substrates, bending tests were conducted with different bending angles for two types of thermal tests. Furthermore, the effect of stress migration and thermal fatigue on the electrical conductivity of the silver thin films was discussed. The experimental samples were silver thin films printed on flexible paper for these tests. In an ultra-low cycle thermal test, the electrical conductivity of a silver film decreased with increasing bending angle because of the occurrence of voids caused by stress migration. Meanwhile, a high-cycle thermal test caused cracks to form and caused further deterioration of the electrical conductivity owing to a combination of stress migration and thermal fatigue.

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Section: Discussionsupporting

confidence: 75%

Morphological evolution and migration behavior of silver thin films on flexible substrates during thermal cycle testing

Sun

et al. 2018

Advances in Mechanical Engineering

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“…A tensile stress of 166 MPa on the Ag top surface was calculated. Due to compressive stress caused by CTE mismatch among the Ag, Ti and Al layers, which possess different material properties including CTE, thermal stress during heating can be calculated by the following equations 37 : MPa when the heating temperature was 200 °C, 250 °C, 300 °C and 350 °C, respectively. The higher heating temperature corresponds to greater stress release, which causes the generation of Ag hillocks, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Low temperature SiC die-attach bonding technology by hillocks generation on Al sheet surface with stress self-generation and self-release

Chen

Suganuma

2020

Sci Rep

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this paper introduced an approach of die-attach bonding technology based on a low-cost high-purity aluminum (99.99%) sheet in a silicon carbide (SiC)/direct bonded aluminum (DBA) power module. Both sides of an Al sheet were sputtered by a thin Ti and Ag layer, which generated a tensile stress of 166 MPa on the Al surface. After heating, the Al surface displayed a large quantity of Ag hillocks by stress selfrelease due to the coefficient of thermal expansion (CTE) mismatch among Al, Ti, and Ag. The SiC/Al sheet/DBA substrate interfaces were bridged by the generation of these hillocks, which correspond to a robust shear strength of 33.4 MPa in a low-temperature process. Hillocks generation and the interface bonding mechanism by surface stress self-generation and self-release were systematically analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The shear strength remains constant at 32.1 MPa after high-temperature storage at 250 °C for 500 h, which suggests that the Al sheet possesses excellent high-heat resistance and thermal stability. this novel approach of die-attach bonding technology serves as an attractive alternative for Sic power devices that require high-temperature performance. Silicon carbide (SiC) forms a next-generation power semiconductor that realizes innovative energy saving in all types of electronic equipment, such as information communication equipment, electric vehicles, and electric railways 1-4. Next-generation super-heat-resistant packaging needs to secure reliability at extremely high operating temperatures (maximum temperature of 250 °C), which are substantially higher than the operating temperature of conventional Si devices (maximum temperature of 150 °C). Although the junction temperature of SiC is 250 °C, SiC can operate at high temperatures. The heat resistance of each part that constitutes the module is lower than 175 °C, which is representative of most solder die-attach materials. To address these challenges, a novel class of die-attach technologies is required due to the processability, compliance, and cost of solders. However, the electrical and thermal properties must match those of a pure metal. SiC power device modules comprise several components, including terminals, a SiC die, direct bonded copper (DBC) or direct bonded aluminum (DBA) substrate, and a heat sink. The bonding technology of SiC die devices, which can be employed for high operating temperature mounting, can be divided into three categories: (1) high melting point solder bonding 5-7 , (2) solid-liquid inter-diffusion bonding (SLID) 8-10 , (3) sinter silver paste joining 11-15 or copper paste joining 16,17. SLID bonding technology has a few advantages, such as a relatively short bonding time and some surface roughness tolerance; however, it is generally limited to material combinations with a favorable phase diagram 17 and interface voids generation 18. The use of sintered Ag paste as a bonding layer has received considerable attention due to its sup...

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“…10 представлены результаты анализа качества монтажа кристаллов SiC с применением пресс-формы и пресс-формы с микроштампами. [12]:…”

Section: производственные технологииunclassified

Монтаж Кристаллов По Технологии Синтеринга Для Производства Элементов И Модулей Силовой Электроники

Иванов¹,

Уголини²

2021

Electronics: STB Russia

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Growth of Ag micro/nanoparticles using stress migration from multilayered metallic structure

Cited by 8 publications

References 20 publications

Morphological evolution and migration behavior of silver thin films on flexible substrates during thermal cycle testing

Morphological evolution and migration behavior of silver thin films on flexible substrates during thermal cycle testing

Low temperature SiC die-attach bonding technology by hillocks generation on Al sheet surface with stress self-generation and self-release

Монтаж Кристаллов По Технологии Синтеринга Для Производства Элементов И Модулей Силовой Электроники

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