Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties

Katagiri, Atsuo; Ogawa, Satoi; Uehara, Mutsuo; Krishnan, P. S. Sankara Rama; Kurokawa, Mao; Matsushima, Masaaki; Shiraishi, Takashi; Akiyama, Kensuke; Funakubo, Hiroshi

doi:10.1007/s10853-017-1902-z

Cited by 10 publications

(7 citation statements)

References 23 publications

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“…This conclusion is consistent with other experimental results 19–21 . The p‐type origin of Mg 2 Si was related to Mg vacancy, the absence of the interstitial Mg or extrinsic defects such as interstitia O atoms introduced during the post annealing 22 …”

Section: Resultssupporting

confidence: 92%

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Liao

Xie

Xiao

et al. 2021

Surface & Interface Analysis

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The Mg2Si/4H‐SiC heterojunction was prepared by radio frequency (RF) magnetron sputtering technique. The binding energies of Mg 2p, Si 2p, and C 1s core levels and the maxima of valence band were measured by X‐ray photoelectron spectroscopy (XPS). Using the optical bandgap of Mg2Si (0.78 eV) and 4H‐SiC (3.25 eV), the band offsets of valence band (VBO) and conduction band (CBO) at Mg2Si/4H‐SiC interface were identified as 1.47 and 1.00 eV, respectively. The band alignment was evaluated to be type‐I band alignment. The Mg2Si/4H‐SiC heterojunction could be a promising candidate for the infrared (IR) photodetector.

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Section: Resultssupporting

confidence: 92%

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Liao

Xie

Xiao

et al. 2021

Surface & Interface Analysis

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“…Accordingly, the Mg vacancies increase, which acts as hole dopants making the acceptor level slightly above the top of the valence band. In the case of Mg 2 Si undoped thin film, the p-type behavior also was reported by A. Katagiri and S. Ohgawa et al 41,42) In their papers, they suggest that the absence of the interstitial Mg, but they do not clarify which defects are responsible for the strong p-type behavior. Our paper suggests that Mg vacancies (point defects) can explain the p-type behavior and the improvement of thermoelectric properties in the case of Mg-based undoped thin films.…”

Section: Thermoelectric Propertymentioning

confidence: 82%

Improvement of power factor in the room temperature range of Mg₂Sn_1−xGe_x

Lima

Aizawa

Ohkubo

et al. 2021

Jpn. J. Appl. Phys.

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In this work, we investigated the influence of the Mg/Sn supply ratio into Mg2Sn thin film, deposited on Al2O3(0001) (sapphire c-plane) substrate using molecular beam epitaxy (MBE), as well as the effect of incorporating Ge. We demonstrated that a low ratio of Sn to Mg improved the thin film’s quality, while the incorporation of Ge atoms (into the Sn sites) resulted in superior thermoelectrical properties (p-type). Our results suggest that the improvement of the thermoelectric properties could be associated with point defects in the Mg site. The optimal power factor value obtained was 2.7 × 10−4 W ∙ m−1 ∙ K−1 at 300 K for the Mg2Sn0.8Ge0.2.

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“…When fixing SPE temperature slightly above 300 o C, which is favorable for magnetron sputtering and thermal evaporation of Mg 2 Si films on Si substrates 26,[44][45][46] , At the second stage, effect of the SPE temperature on the average reflectivity of the Mg 2 Si/b-Si was examined for the fixed 50-nm thick Mg film thickness determined previously as optimal. The data are summarized in Fig.…”

Section: Resultsmentioning

confidence: 99%

Mg$_2$Si is the new black: introducing a black silicide with $>$95% average absorption at 200-1800 nm wavelengths

Shevlyagin,

Il'yaschenko,

Kuchmizhak

et al. 2022

Preprint

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Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection properties. However, near-infrared (NIR) performance of bare b-Si is limited by Si band gap of 1.12 eV or 1100 nm. This work reports a simple method to increase NIR absorption of b-Si by in vacuo silicidation with magnesium. Obtained Mg 2 Si/b-Si heterostructure has a complex geometry where b-Si nanocones are covered by Mg 2 Si shells and crowned with flake-like Mg 2 Si hexagons. Mg 2 Si formation atop b-Si resulted in 5-fold lower reflectivity and optical absorption to be no lower than 88% over 200-1800 nm spectral range. More importantly, Mg 2 Si/b-Si heterostructure is more adjusted to match AM-1.5 solar spectrum with theoretically higher photogenerated current density. The maximal advantage is demonstrated in the NIR region compared to bare b-Si in full accordance with one's expectations about NIR sensitive narrow band gap ( ∼ 0.75 eV) semiconductor with high absorption coefficient, which is Mg 2 Si. Results of optical simulation confirmed the superiority of Mg 2 Si/b-Si NIR performance. Therefore, this new wide-band optical absorber called black silicide proved rather competitive alongside stateof-the-art approaches to extend b-Si spectral blackness.

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Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties

Cited by 10 publications

References 23 publications

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Improvement of power factor in the room temperature range of Mg₂Sn_1−xGe_x

Mg$_2$Si is the new black: introducing a black silicide with $>$95% average absorption at 200-1800 nm wavelengths

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Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties

Cited by 10 publications

References 23 publications

Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application

Determination of the interface band alignment of Mg2Si/4H‐SiC heterojuction for potential photodetector application

Improvement of power factor in the room temperature range of Mg2Sn1−x Ge x

Mg$_2$Si is the new black: introducing a black silicide with $>$95% average absorption at 200-1800 nm wavelengths

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Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Determination of the interface band alignment of Mg₂Si/4H‐SiC heterojuction for potential photodetector application

Improvement of power factor in the room temperature range of Mg₂Sn_1−xGe_x