2018
DOI: 10.1016/j.jcrysgro.2018.01.021
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Growth morphology and structure of PdCu ion-plasma condensate in the pores of SiO2 and Al2O3 amorphous matrices

Abstract: The features of the growth morphology and structure of ion-plasma palladium-copper condensate both on the surface and in the pores of amorphous SiO2 and Al2O3 matrices were studied by scanning electron microscopy and high resolution transmission electron microscopy. Differences in the morphology and crystal structure of the metallic ion-plasma condensate obtained by magnetron sputtering deposition of the PdCu alloy on the surface and in a limited pore volume were shown and substantiated. The main regularities … Show more

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Cited by 3 publications
(1 citation statement)
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“…Natural conditions for nanostructures formation are realized using a porous dielectric template on a semiconductor, for the creation of which it is reasonable to use the technology of swift heavy ions tracks [12,13]. This technology makes it possible to create pores in the silicon oxide layer, the filling of which with appropriate materials, organically adapts resulting heterostructures to the silicon technology standards [14,15]. The system complexity, which connected with discreteness of metal particles in contacted with the semiconductor and separated by dielectric interlayers of pores, predetermines the nontriviality of charge transfer processes, the dominant mechanisms of which will be different in a wide range of temperatures and magnetic fields.…”
Section: Introductionmentioning
confidence: 99%
“…Natural conditions for nanostructures formation are realized using a porous dielectric template on a semiconductor, for the creation of which it is reasonable to use the technology of swift heavy ions tracks [12,13]. This technology makes it possible to create pores in the silicon oxide layer, the filling of which with appropriate materials, organically adapts resulting heterostructures to the silicon technology standards [14,15]. The system complexity, which connected with discreteness of metal particles in contacted with the semiconductor and separated by dielectric interlayers of pores, predetermines the nontriviality of charge transfer processes, the dominant mechanisms of which will be different in a wide range of temperatures and magnetic fields.…”
Section: Introductionmentioning
confidence: 99%