Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals

Augustine, Saji; Mathai, Elizabeth

doi:10.1016/s0025-5408(01)00717-6

Cited by 37 publications

(12 citation statements)

References 12 publications

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“…A sample of 5-10 mg was placed in an alumina crucible and the experiment was performed in the temperature range of 303-1000 K. In the DSC spectrum, which is shown in Fig. 7, one can see an endothermic peak at around 981 K, which is close to the melting temperature of bismuth selenide (Augustine & Mathai, 2001). It also implies that no other phase formation occurs during the growth process.…”

Section: Differential Scanning Calorimetrymentioning

confidence: 95%

“…2. The temperature of the furnace is fully controlled by a Eurotherm temperature controller having an accuracy of 1 K. The temperature is slowly increased in different steps to reach up to 993 K. This is slightly higher than the melting point ($980 K) (Augustine & Mathai, 2001) for producing the homogenous melting of the compound. After reaching the homogenous melting point, the ampoule was kept stationary for 4 h. After that, the cooling process was started by lowering the ampoule into the cold zone, and the cooling continued until the crystallization process was complete.…”

Section: Crystal Growthmentioning

confidence: 99%

“…The recorded PXRD pattern, shown in Fig. 4(a), revealed that bismuth selenide crystallizes as a hexagonal structure (Augustine & Mathai, 2001). The lattice parameters for the bismuth selenide single crystal were calculated by the Chekcell software (http:// www.ccp14.ac.uk/tutorial/lmgp/achekcelld.htm): a = 4.133, c = 28.6016 Å and V = 423.16 Å 3 .…”

Section: X-ray Diffraction Analysismentioning

confidence: 99%

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Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

et al. 2015

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The growth of good quality bulk single crystals of bismuth selenide by employing a high-temperature vertical Bridgman technique with a specially designed ampoule having a provision for a necking process is reported. Several growth experiments were performed and reproducible results were obtained. The crystal structure and lattice dimensions were confirmed by powder X-ray diffraction (PXRD), the bulk crystalline perfection was assessed using highresolution X-ray diffractometry and the good bulk crystalline perfection with an indication of layered structure was confirmed. Transmission electron microscopy (TEM) was carried out for the grown single crystal and confirmed the layered structure. High-resolution TEM (HRTEM) was also used to further assess the crystalline perfection. The direct measurement of d spacing obtained from HRTEM imaging was found to be in good agreement with the data obtained from PXRD. The thermal behavior was examined by differential scanning calorimetry and a sharp melting was found at 983 K, which revealed the purity of the bismuth selenide. The Seebeck coefficient and electrical and thermal conductivities were measured, and a thermoelectric figure of merit was calculated in order to assess the suitability of the crystal for thermoelectric applications such as refrigeration and portable power generation. Nanoindentation analysis was also performed for the first time.

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Section: Differential Scanning Calorimetrymentioning

confidence: 95%

Section: Crystal Growthmentioning

confidence: 99%

Section: X-ray Diffraction Analysismentioning

confidence: 99%

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Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

et al. 2015

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“…However, there is no report on nanoflowers of Bi 2 Se 3 . Doping of cations such as Sb 3+ 3, In 3+ 13, Gd 3+ 14 and Fe 3+ 15 into the lattice of Bi 2 Se 3 has been investigated till now. However, to the best of our knowledge, there was no work devoted to neodymium‐doped Bi 2 Se 3 .…”

Section: Introductionmentioning

confidence: 99%

Hydrothermal Synthesis of Nd^III Doped Bi₂Se₃ Nanoflowers and their Physical Properties

Alemi¹,

Babalou²,

Dolatyari³

et al. 2009

Zeitschrift anorg allge chemie

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Luminescent Bi 2-x Nd x Se 3 nanoplates and nanoflowers were prepared by a hydrothermal co-reduction method. XRD patterns indicate that the Bi 2-x Nd x Se 3 crystals with 0-10 mol-% Nd 3+ are isostructural with Bi 2 Se 3 . Preferential nucleation and growth of the synthesised Bi 2-x Nd x Se 3 has been observed along a certain plane. SEM shows morphology changes upon doping of Nd 3+ ions into bismuth sites from separate nano-plates to nano-flowers. UV/Vis spectra show that an in-

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“…Addition of impurities has a pronounced effect on the conduction mechanism and the structure of the amorphous glass [13]. Therefore, the ternary compounds involving Bi-Se-Te have interesting properties as well as technological applications because they form a wide range of glassy region [14][15][16][17][18][19][20]. In this work the effect of Bi content on the optical properties of Se-Te is studied.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Bi x (Se80Te20)100−x amorphous thin films

Abdel-Rahim

2015

Indian J Phys

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In this study, amorphous Bi x (Se 80 Te 20 ) 100-x glasses with (0 B x B 12) were prepared by the usual melt quench technique. Thin films of these glasses were deposited onto glass substrates by using thermal evaporation method. The amorphous nature of the as-prepared films was confirmed by X-ray diffraction. Structural investigations were performed using X-ray energy-dispersive spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The transmission spectra of these films were measured at normal incidence in the wavelength range 400-2500 nm. Swanepoel's analysis of the maxima and minima of the interference fringes was used to determine the film thickness, the complex index of refraction and the extinction coefficient with high accuracy. The dispersion of the refractive index was well discussed in terms of the single oscillator model (Wemple and DiDomenico). It was found that increasing Bi content led to the increase in refractive index and the extinction coefficient of the Bi x (Se 80 Te 20 ) 100-x films, while the optical band gap decreased. The mechanism of the optical absorption in Bi x (Se 80 Te 20 ) 100-x films obeyed the allowed indirect optical transition. The decrease in optical gap with increasing Bi content was discussed in terms of the chemical bond approach.

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Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals

Cited by 37 publications

References 12 publications

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

Hydrothermal Synthesis of Nd^III Doped Bi₂Se₃ Nanoflowers and their Physical Properties

Synthesis and characterization of Bi x (Se80Te20)100−x amorphous thin films

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Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals

Cited by 37 publications

References 12 publications

Enhancement of thermoelectric figure of merit in Bi2Se3crystals through a necking process

Enhancement of thermoelectric figure of merit in Bi2Se3crystals through a necking process

Hydrothermal Synthesis of NdIII Doped Bi2Se3 Nanoflowers and their Physical Properties

Synthesis and characterization of Bi x (Se80Te20)100−x amorphous thin films

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Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

Enhancement of thermoelectric figure of merit in Bi₂Se₃crystals through a necking process

Hydrothermal Synthesis of Nd^III Doped Bi₂Se₃ Nanoflowers and their Physical Properties