Growth Mode and Interface Structure of MBE Grown SiGe Structures

Solid Surfaces, Interfaces and Thin Films

“…Further strong support for the π -bonded chain model is obtained from line scans of the tunnel current, i.e. the corrugation along(211), at opposite biases of +0.8 and −0.8 V. Although the occupied and empty surface states are probed separately in these two cases(Fig. VI.5), the maxima and minima of the corrugation occur at the same location, as is expected for the π -bonded chain model(Fig.…”

“…See also Fig. 3.6arguments are reminiscent of a Peierls instability and no detailed assumptions about the reconstruction are necessary.For a long time the so-called buckling model had been assumed to explain the double periodicity along[211] on the cleaved Si(111)-(2 × 1) surface [6.40] (Figs. 3.6(b), 6.32).…”

Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

“…In novel (SiC) m /(GeC) n SLs, one could expect observing similar effects due to large separation of the longitudinal and transverse optical (ω LO , ω TO ) modes of their constituents despite an overlap of SiC longitudinal acoustic (ω LA ) modes on the low-energy optical [12][13][14][15] phonon region of GeC. It is, therefore, interesting to undertake methodical lattice dynamical studies [19,[54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69] to simulate the phonon properties of (SiC) m /(GeC) n SLs for comprehending the impacts of m, n and ∆ on the acoustical as well as optical mode frequencies.…”

“…The purpose of this paper is (i) to use a modified linear-chain model (M-LCM) [19,[54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69] and study the phonon dispersions ω SL j → q of (SiC) m /(GeC) n SLs, (ii) simulate Raman intensities of the graded (SiC) 10−∆ /(Si 0.5 Ge 0.5 C) ∆ /(GeC) 10−∆ /(Si 0.5 Ge 0.5 C) ∆ SLs (cf. Sections 2 and 2.1) by meticulously integrating interfacial layer thickness ∆, and (iii) exploit a realistic rigid-ion model (RIM) [54] for calculating the phonon dispersion of zb SiC, zb GeC materials and their SiC) m /(GeC) n SLs (cf.…”

“…We strongly believe that these important features are responsible for triggering strong enhancement of RIPs in the middle of the optical phonon frequency region. Besides M-LCM, a realistic rigid-ion model (RIM) [54][55][56][57][58][59][60][61][62][63][64][65][66][67][68] is also adopted (cf. Sections 3, 3.4 and 3.5) for calculating the phonon dispersions ω j → q of bulk zb SiC and zb GeC materials and ω SL j → q (SiC) m /(GeC) n SLs.…”