Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

Abstract

The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

Ga2O3polymorphs: tailoring the epitaxial growth conditions

“…The Ga 3+ and Cl À ions and H 2 O molecules are supposed to be vaporized, transported in the gas phase and able to reach the substrate with the same ratio defined in the solution. 52 Arata et al 50 used GaCl dissolved in deionized H 2 O, resulting in Ga : Cl = 1. For MOVPE, the work of Sun et al 42 is the only one where HCl is added to the gas phase: in this case the Ga : Cl value results from the ratio between the TEG (triethyl-gallium) and HCl flows, privately communicated by the corresponding author of the paper.…”

Impact of hydrochloric acid on the epitaxial growth of In2O3 films on (0001)α-Al2O3 substrates by mist CVD

“…[31][32][33][34][35][36][37][38][39][40] Understanding the mist CVD growth mechanism is very difficult, since vapor deposition occurs through the chemical reaction of molecules when solution-based mist particles a few micrometers in diameter are supplied to the furnace. [41][42][43] Kawaharamura and others are working to elucidate the growth mechanism using the Leidenfrost phenomenon, 41) but there are many things that have not been elucidated yet. One is that although a small amount of hydrochloric acid (HCl) is usually added to an aqueous solvent to dissolve the source precursor, [31][32][33][34][35][36][37]39) the effect of adding HCl on the growth mechanism has not been clarified.…”

Fabrication and mechanical properties of tungsten carbide thin films via mist chemical vapor deposition

“…Earlier studies have mainly applied mist CVD to the preparation of oxide films, such as ZnO [16][17][18], Ga2O3 [19,20], Cu2O [21,22], and NiO [23]. Additionally, sulfide thin films, such as ZnS [24,25] and Cu2ZnSnS4 [26], and all-inorganic halide perovskite [27] thin films have been fabricated by this method. However, there have been no reports on the growth of carbides or nitrides using the mist CVD method.…”