Growth mechanism of vapor–liquid–solid (VLS) grown indium tin oxide (ITO) whiskers along the substrate

Yumoto, Hisami; Sako, T; Gotoh, Y.; Nishiyama, Kozaburo; Kaneko, Tsutomu

doi:10.1016/s0022-0248(99)00079-2

Cited by 55 publications

(38 citation statements)

References 9 publications

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“…We propose a growth process based on these experimental results. It is known that many whiskers and nanowires are grown by a vapour-liquid-solid mechanism [21], in general, perpendicular to the substrate and have a droplet on their tip [22]. In our experiments, we did not observe any droplet on the end of tungsten oxide nanorods, this indicates that the growth proceeds by a vapour--solid (VS) growth mechanism.…”

Section: Growth Mechanismsupporting

confidence: 46%

Growth of epitaxial tungsten oxide nanorods

Gillet¹,

Delamare²,

Gillet³

2005

Journal of Crystal Growth

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A simple vapour deposition technique was used to prepare WO 3 one-dimensional nanostructures. WO 3 is sublimated at a relatively low temperature (550 1C) in air at atmospheric pressure. The sublimated species are condensed on mica substrate at 500 1C. Single crystalline nanorods are grown in epitaxy on the mica surface with a growth axis along [0 1 0] directions and (0 0 1) plane parallel to the substrate. A growth process is proposed in which the formation of a onedimensional tetragonal tungsten bronze as precursor is the determining factor. r

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Section: Growth Mechanismsupporting

confidence: 46%

Growth of epitaxial tungsten oxide nanorods

Gillet¹,

Delamare²,

Gillet³

2005

Journal of Crystal Growth

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“…The main reasons include their interesting photonic and electronic properties, and their importance as building blocks for interconnects of transistors, junctions between metals and semiconductors, and the tips of emitters. There are numerous studies on whiskers and wires of Si and III±V systems, [1±4] and also on oxide systems, including SnO 2 , [5] SiO 2 , [6] GeO 2 , [7] ZnO, [8,9] indium tin oxide (ITO), [10] and Al 2 O 3 . [11] Among them, ZnO is an n-type semiconductor with a wide bandgap (3.30 eV).…”

Section: Introductionmentioning

confidence: 99%

Characterization and Field‐Emission Properties of Needle‐like Zinc Oxide Nanowires Grown Vertically on Conductive Zinc Oxide Films

Tseng

Huang

Cheng

et al. 2003

Adv Funct Materials

393

164

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Needle‐like ZnO nanowires with high density are grown uniformly and vertically over an entire Ga‐doped conductive ZnO film at 550 °C. The nanowires are grown preferentially in the c‐axis direction. The X‐ray diffraction (XRD) θ‐scan curve shows a full width at half maximum (FWHM) value of 2°. This indicates that the c‐axes of the nanorods are along the normal direction of the substrate surface. The investigation using high‐resolution transmission electron microscopy (HRTEM) confirmed that each nanowire is a single crystal. A room‐temperature photoluminescence (PL) spectrum of the wires consists of a strong and sharp UV emission band at 380 nm and a weak and broad green–yellow band. It reveals a low concentration of oxygen vacancies in the ZnO nanowires and their high optical quality. Field electron emission from the wires was also investigated. The turn‐on field for the ZnO nanowires was found to be about 18 V μm–1 at a current density of 0.01 μA cm–2. The emission current density from the ZnO nanowires reached 0.1 mA cm–2 at a bias field of 24 V μm–1.

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“…Indium atoms have a full complement of six nearest O 2− ions. Peak 2 at 532.08 eV is corresponded to the O 2− ions in oxygen deficiency regions [22,23], which shows that oxygen deficiencies exist in ITO nanotubes. The binding energy of Sn3d5/2 (Fig.…”

Section: Morphology and Crystal Structure Of Ito Nanotubesmentioning

confidence: 98%