Growth mechanism of twin-related and twin-free facet Si dendrites

Nagashio, Kosuke; Kuribayashi, Kazuhiko

doi:10.1016/j.actamat.2005.03.022

Cited by 115 publications

(81 citation statements)

References 24 publications

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“…Table 1 shows a summary of the results, in which the growth plane, defined as the crystallographic orientation perpendicular to the molten alloy film, and the growth directions of the primary and secondary arms are tabulated. These results are the same as those of silicon dendrites reported by Nagashio and Kuribayashi [28,29]. However, a /1 1 0S dendrite in Table 1 has fourfold symmetry and is different from their /1 1 0S twin dendrite.…”

Section: Dendrite Growth Morphologysupporting

confidence: 75%

“…For undercooling larger than 50 K, /2 1 1S and /1 0 0S dendrites become dominant. Nagashio and Kuribayashi [28,29] have reported that the growth of a silicon dendrite changes from that of a /1 1 0S twin dendrite to that of a /1 0 0S twin-free dendrite with increasing undercooling and the transition undercooling is about 100 K, but no clear twin/twin-free dendrite transition was observed in the present work. This difference is presumably due to the spatial constraint of the growth plane by the two sapphire plates.…”

Section: Article In Presscontrasting

confidence: 43%

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Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

Kuniyoshi

Ozono

Ikeda

et al. 2006

Science and Technology of Advanced Materials

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Two-dimensional faceted dendrite growth of silicon from undercooled melt of Si-6 wt%Ni alloy was experimentally investigated, in which molten alloy film from 10 to 20 mm in thickness was undercooled up to 115 K and growing dendrites were observed in situ. Both the in situ observation of dendrite morphology and the EBSP crystallographic analysis for solidified samples showed that both a /2 1 1S twin dendrite and a /1 0 0S twin-free dendrite grew in the range of undercooling from 50 to 115 K. Dendrite growth velocity was also measured for different undercooling conditions. The growth velocity of /2 1 1S dendrites was slightly larger than that of /1 0 0S dendrites. It is concluded that the upper envelope of the data provide the correct dendrite growth velocity and it is compared with that obtained by phase-field simulations. Growth velocity in both follows power relationships to undercooling and the linear kinetic coefficient is estimated to be 0.01 m/s K. r

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Section: Dendrite Growth Morphologysupporting

confidence: 75%

Section: Article In Presscontrasting

confidence: 43%

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

Kuniyoshi

Ozono

Ikeda

et al. 2006

Science and Technology of Advanced Materials

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“…Their conclusion is very clear, but the electron-micrographs that were used as the evidence for their conclusions are obscure. On this point, Nagashio and Kuribayashi, 12 on the basis of scanning electron microscopy electron backscatter diffraction pattern analysis, showed that the crystallographic features of Si: h110i dendrites are grown under the twin-related reentrant corner mechanism, and h100i dendrites are under the twinfree nucleation and growth mechanism. Thus, the growth directions of primary and secondary arms of the h110i dendrites are h110i, and those of the h100i dendrites are h100i and h110i.…”

Section: Resultsmentioning

confidence: 99%

Rapid Crystallization of Levitated and Undercooled Semiconducting Material Melts

Ishibashi

Kuribayashi

Nagayama

2012

JOM

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Using a CO 2 laser-equipped electromagnetic levitator, we carried out the containerless crystallization of Si and Ge. From the point of interface morphologies, the relation between growth velocities and undercoolings was classified into three regions. In regions I and II, although the morphologies of growing crystals are different: plate-like needle crystals in region I and facetted dendrite at region II, the growth velocities in these two regions are fundamentally scaled by the thermal diffusivities and the temperature increase caused by the release of the latent heat. This result means that the growth velocity can be expressed by the product of the thermal diffusivity and the growth kinetics. An analysis of the dendrite morphologies revealed that the kinetics of crystal growth in regions I and II represent two-dimensional nucleation at the reentrant corner formed at the edge of the two parallel twins. In region III, thermal diffusion-controlled interface attachment kinetics control as described by a modified Wilson-Frenkel model.

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“…It grows in the h212i direction, and its tip angle of the wedge is about 60 degrees. It is presumably a h211i twin dendrite reported by Nagashio and Kuribayashi, 25) though the growth plane seems to be slightly inclined to the free surface. The third one (Type C) has an irregular shape and looks as the mixture of plural crystals.…”

Section: Methodsmentioning

confidence: 99%

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

2007

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Two-dimensional faceted crystal growth of silicon from undercooled melt of Si-20 mass%Ni alloy was experimentally investigated, in which a droplet sample from 10 to 100 mg was undercooled on a single-crystal sapphire and growing crystals were observed in situ. Observed crystals were classified according to the shapes of square, wedge and irregular shapes. The growth velocity was measured for different undercooling conditions. The growth velocity of square shaped crystals was about half times smaller than that of wedge shaped crystals. The growth of square shaped crystals is regarded to be two-dimensional and it is compared with the results of two-dimensional phase-field simulations. Growth velocity in both is in good agreement and the linear kinetic coefficient is estimated to be 0.002 m/sK.

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Growth mechanism of twin-related and twin-free facet Si dendrites

Cited by 115 publications

References 24 publications

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

Rapid Crystallization of Levitated and Undercooled Semiconducting Material Melts

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

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