2006
DOI: 10.1021/jp060335o
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Growth Mechanism of Textured MgO Thin Films via SSCVD

Abstract: Magnesium oxide thin films have been deposited with use of single source chemical vapor deposition (SSCVD). The resultant films were examined by using transmission electron microscopy, X-ray texture analysis, and pole figure analysis. Due to the nature of the chemical reactions occurring at the surface during SSCVD growth, which result in a high growth rate/low flux environment, films of (111) orientation have been achieved without an amorphous underlayer, an unusual result for films of this orientation. Moreo… Show more

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Cited by 8 publications
(9 citation statements)
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“…6) showed only the (111) and (222) reflections of cubic MgO, which indicates that highly (111)axis oriented films are obtained. Films of cubic MgO with preferential (200) as well as (111) orientation are well known and both type of textures can be obtained by gas-phase 13,17 and sol-gel 19,22 methods. In fcc oxides the (200) plane possesses the lowest surface energy and should therefore be thermodynamically favourable.…”
Section: Formation Of Mgo Thin Films Frommentioning
confidence: 99%
See 3 more Smart Citations
“…6) showed only the (111) and (222) reflections of cubic MgO, which indicates that highly (111)axis oriented films are obtained. Films of cubic MgO with preferential (200) as well as (111) orientation are well known and both type of textures can be obtained by gas-phase 13,17 and sol-gel 19,22 methods. In fcc oxides the (200) plane possesses the lowest surface energy and should therefore be thermodynamically favourable.…”
Section: Formation Of Mgo Thin Films Frommentioning
confidence: 99%
“…Growth along the [111] direction is, however, faster and can thus be kinetically favoured. 17 For the formation of a (111) preferential orientation it was suggested that an amorphous phase is formed first which then crystallises and exhibits the texture under influence of the substrate. 13,17,22 This is in good accordance with the situation presented in this work.…”
Section: Formation Of Mgo Thin Films Frommentioning
confidence: 99%
See 2 more Smart Citations
“…SSCVD has been successfully employed in the past to prepare thin films of materials including ZnS, 9 ZnO 10 and MgO. 11, 12 In the instance of Zn x Mg 1−x O, the approach has the added advantage of providing a means of overcoming the difficulties associated with creating an alloyed material through an intimate mixing framework in situ at the growth interface, as this level of intimate mixing has already been achieved within the precursor molecule. The technique is highly desirable from a materials creation standpoint, but its utilisation poses a significant challenge to the synthetic chemist due to the stringent precursor requirements.…”
Section: Introductionmentioning
confidence: 99%