Growth Mechanism of Self-Catalyzed Group III−V Nanowires

Mandl, Bernhard; Stangl, J.; Hilner, Emelie; Zakharov, Alexei; Hillerich, Karla; Dey, Anil W.; Samuelson, Lars; Bauer, G.; Deppert, Knut; Mikkelsen, Anders

doi:10.1021/nl1022699

Cited by 185 publications

(233 citation statements)

References 41 publications

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“…33 Our measurements support particle-assisted growth scheme with seed particles containing elements constituting the NW because the measured NW length and diameter increase with an increase in Ga droplet size (Fig. 1).…”

Section: Resultssupporting

confidence: 74%

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Kasama

Thuvander

Siusys

et al. 2015

Journal of Applied Physics

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Publication date: 2015 Document VersionPublisher's PDF, also known as Version of record Link back to DTU Orbit Citation (APA): Kasama, T., Thuvander, M., Siusys, A., Gontard, L. C., Kovács, A., Yazdi, S., ... Sadowski, J. (2015) Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography. Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga 0.82 Mn 0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 6 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga 0.82 Mn 0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. V C 2015 AIP Publishing LLC.

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Section: Resultssupporting

confidence: 74%

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Kasama

Thuvander

Siusys

et al. 2015

Journal of Applied Physics

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“…This important feature requires a careful investigation of time-dependent nucleation of nanowires and nanowire statistics, a problem that, to the best of our knowledge, has not been addressed so far. On the other hand, self-catalyzed III-V nanowires usually grow not only vertically, but also extend radially [30,31]. This is due to an excessive group III influx into the reservoir in the Ga droplet.…”

Section: The Modelmentioning

confidence: 99%

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

et al. 2015

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Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and density of self-catalyzed GaAs nanowires on Si(111) substrates by growth conditions using the self-assembly of Ga droplets. We introduce a new paradigm of the characteristic nucleation time controlled by group III flux and temperature that determine diameter and length distributions of GaAs nanowires. This insight into the growth mechanism is then used to grow nanowire forests with a completely tailored diameter-density distribution. We also show how the reflectivity of nanowire arrays can be minimized in this way. In general, this work opens new possibilities for the cost-effective and controlled fabrication of the ensembles of self-catalyzed III-V nanowires for different applications, in particular in next-generation photovoltaic devices.S Online supplementary data available from stacks.iop.org/NANO/26/105603/mmedia

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“…17 Meanwhile, the density of the InAs nanorods depended on both molecular fluxes and growth temperature, as these factors strongly affect the surface migration lengths of adatoms. 17,18 RHEED characterization In this study, MBE-grown InAs nanorods on CVD graphene layers were monitored in situ in the initial growth stage using RHEED. Before the nanorod growth, as shown in Figure 2a, a streaky RHEED pattern was observed from CVD graphene layers transferred onto a SiO 2 /Si substrate.…”

Section: Resultsmentioning

confidence: 99%

Catalyst-free growth of InAs/InxGa1−xAs coaxial nanorod heterostructures on graphene layers using molecular beam epitaxy

Tchoe

Kim

et al. 2015

NPG Asia Mater

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We report the catalyst-free growth of InAs/In x Ga 1 − x As coaxial nanorod heterostructures on large-area graphene layers using molecular beam epitaxy and our investigation of the chemical composition and crystal structure of these heterostructures using electron microscopy. The graphene layers used as the substrate were prepared by chemical vapor deposition and transferred onto SiO 2 /Si substrates. InAs nanorods and their heterostructures were grown vertically on the graphene layers; electron microscopy images revealed uniform distributions for their diameter, length and density. Cross-sectional electron microscopy images showed that In x Ga 1 − x As layers, having uniform composition, coated heteroepitaxially the entire surface of the InAs nanorods, without interfacial layers or structural defects. The catalyst-free growth mechanism of InAs nanorods on graphene was investigated using in situ reflection high-energy electron diffraction.

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Growth Mechanism of Self-Catalyzed Group III−V Nanowires

Cited by 185 publications

References 41 publications

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Catalyst-free growth of InAs/InxGa1−xAs coaxial nanorod heterostructures on graphene layers using molecular beam epitaxy

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