Growth mechanism of &amp;amp;lt;100&amp;amp;gt; dark-line defects in high radiance GaAlAs LED's

Yamakoshi, Shigenobu; Sugahara, Tomoya; Hasegawa, Osamu; Toyama, Y.; Takanashi, H.

doi:10.1109/iedm.1978.189500

Cited by 9 publications

(2 citation statements)

References 4 publications

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“…the fact that the chosen stress will accelerate the low activation mechanism, but not accelerate the long-term, higher-activation energy mode as much. This expectation is reasonable for AlGaAs/GaAs lasers because, for example, the low thermal activation energy mechanisms are strongly current-density dependent, 27,48 while the long-term, grad ual wear-out mode is very weakly current-density dependent. 48,70 Sim ilar strong current-density dependence of DLD and DSD formations have been found for InGaAsP/InP devices; 61,71 it is reasonable to suppose that the wear-out mode may be analogously weakly currentdensity dependent.…”

Section: Purgementioning

confidence: 93%

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Nash

Joyce

Hartman

et al. 1985

At&T Technical Journal

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We are concerned with assuring the reliability of semiconductor lasers intended for an application in which the design lifetime is long, replacement or redundancy is impossible or impractical, and the failure of even a few lasers could be disastrous. In the search for a reliability assurance strategy that will meet our objectives, we have carefully examined the well-known and widely used bathtub and lognormal approaches. Based upon our understanding of the expected aging behavior of lasers, we propose an alternative reliability assur ance strategy that we believe to be an improvement over the traditional approaches. The object is not how to make reliable lasers, but rather how to confidently predict, in a timely fashion, which lasers in a given population will endure beyond the intended system lifetime. Particular emphasis is placed upon initially imposed overstress regimes that address the anticipated presence of transient modes of degradation and infant failure modes with low thermal activation energies that may be invulnerable to detection during accelerated thermal aging. Since lasers degrade gradually rather than fail suddenly, comparable emphasis is placed upon monitoring the stabilized long-term degradation rates of the survivors of the overstress regimes so as to permit lifetime predictions of individual lasers.

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Section: Purgementioning

confidence: 93%

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Nash

Joyce

Hartman

et al. 1985

At&T Technical Journal

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“…Thus the activation energy, E a , is a single variable for characterization of different material systems. The value of E a for AlGaAs/ GaAs surface emitting LEDs is 0.56-0.6 eV, (33) ana f or inGaAsP/InP surface emitting LEDs E a is 0.9-1 ev(34), a s shown in Figure 11. These values imply 106 to 107 hours operation at room-temperature for AlGaAs/GaAs LEDs and 5xl0 9 hours for InGaAsP/InP LEDs.…”

Section: Led Reliabilitymentioning

confidence: 96%

<title>Recent Development In Light-Emitting Diodes (LEDS) For Optical Fiber Communications Systems</title>

Lee¹

1980

SPIE Proceedings

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This paper presents a review of recent research and development in high radiance LEDs intended for use as sources in optical fiber communications systems. Development in the last decade has resulted in reliable devices for use in the 0.8 to 0.9 pm wavelength region based on the AlxGal -xAs -GaAs double heterostructure material system. Both high -power and wide -bandwidth LEDs have been produced. Near -optimum performance of small area surface emitters (Burrus diodes) as well as edge emitters has been obtained. The paper will describe new trends in improving LED -to -fiber coupling efficiency, methods for reducing the nonlinearity of LEDs for analog applications, degradation mechanisms and device life. Recent achievement in long wavelength LEDs and PIN photodiodes has led to the development of a second generation of LED -fiber systems for operation at 1.3 um wavelength, with data rates as high as a few hundred Mb /s and repeater spacings (or data link spans) of many kilometers. I. AbstractThis paper presents a review of recent research and development in high radiance LEDs intended for use as sources in optical fiber communications systems. Development in the last decade has resulted in reliable devices for use in the 0.8 to 0.9 ym wavelength region based on the Al xGai~xAs-GaAs double heterostructure material system. Both high-power and wide-bandwidth LEDs have been produced. Near-optimum performance of small area surface emitters (Burrus diodes) as well as edge emitters has been obtained. The paper will describe new trends in improving LED-to-fiber coupling efficiency, methods for reducing the nonlinearity of LEDs for analog applications, degradation mechanisms and device life. Recent achievement in long wavelength LEDs and PIN photodiodes has led to the development of a second generation of LED-fiber systems for operation at 1,3 ym wavelength, with data rates as high as a few hundred Mb/s and repeater spacings (or data link spans) of many kilometers.

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Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3&#181;m wavelength

Yamakoshi

Abe²,

Komiya³

et al. 1979

1979 International Electron Devices Meeting

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Accelerated aging at the elevated temperatures was performed, and degradation phenomena were investigated for the high radiance InGaAsP/InP LEDs emitting at the 1.2-1.3pm region.During aging, some of the samples showed dark structures such as DSDs and/or DLDs in the emitting region. DSDs are found to be due to the precipitates. The time required for the appearance of these defects(tDg) was given as functions of the current density!J) and the temperature(T), i.e., tDS oc JW2. exp ( 1.2eV/kT) a ated aging at the elevated temperatures of 20-230°C was carried out for over 10,000 hours. The activation energy of homogeneous degradation was obtained to be 0.9-1.0eV.From the results of aging, the extrapolated half-life in excess of 5 x 109 hours is estimated at room temperature operation, and these InGaAsP/ InP LEDs are very promising as a source in practical fiber-optical communication systems.

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Growth mechanism of &lt;100&gt; dark-line defects in high radiance GaAlAs LED's

Abstract: The dependence of the growth velocity of dark-line defects on current density, temperature and acceptor doping was investigated in the GaAlAs LED's.

Cited by 9 publications

References 4 publications

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

<title>Recent Development In Light-Emitting Diodes (LEDS) For Optical Fiber Communications Systems</title>

Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3&#181;m wavelength

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Growth mechanism of &amp;lt;100&amp;gt; dark-line defects in high radiance GaAlAs LED's

Abstract: The dependence of the growth velocity of dark-line defects on current density, temperature and acceptor doping was investigated in the GaAlAs LED's.

Cited by 9 publications

References 4 publications

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

<title>Recent Development In Light-Emitting Diodes (LEDS) For Optical Fiber Communications Systems</title>

Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3&amp;#181;m wavelength

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Growth mechanism of <100> dark-line defects in high radiance GaAlAs LED's

Degradation of high radiance InGaAsP/InP LEDs at 1.2-1.3µm wavelength