Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

Wu, Qingwen; Yan, Jianchang; Zhang, Liang; Chen, Xiang; Wei, Tongbo; Li, Yang; Liu, Zhiqiang; Wei, Xiang; Zhang, Yun; Wang, Junxi; Li, Jinmin

doi:10.1039/c7ce01064h

Cited by 34 publications

(37 citation statements)

References 40 publications

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“…As seen in Figure S8, Mg 2+ is difficult to (de)intercalate into Li 4 Mn 5 O 12 cathode with the diameter range of 20–50 nm in APC electrolyte, unlike in “zero‐strain” Li 4 Ti 5 O 12 . In the light of previous work, the phenomenon can be explained as follows. On the one hand, the lattice constant of 8.1457 Å for Li 4 Mn 5 O 12 is less than that of 8.3595 Å for Li 4 Ti 5 O 12 .…”

Section: Resultsmentioning

confidence: 99%

“…Combining the advantages of Li + fast kinetics in the cathode and difficult formation of dendrites on Mg anode, a new approach for a hybrid Mg−Li battery with an Mg anode, a Li intercalation cathode and a hybrid Mg−Li electrolyte has been proposed . The working principle of a hybrid Mg−Li batteries is shown in Figure a.…”

Section: Introductionmentioning

confidence: 99%

“…It is similar to LIBs and operates by shuttling the Li ions between the electrodes . Currently, a plenty of literatures have been reported on hybrid Mg−Li batteries with different cathodes, such as TiS 2 (1.4 V, vs. Mg/Mg 2+ ), Li 4 Ti 5 O 12 (0.5 V, vs. Mg/Mg 2+ ), LiCrTiO 4 (0.62 V, vs. Mg/Mg 2+ ), FeS 2 (0.7 V, vs. Mg/Mg 2+ ), MLi 2 Ti 6 O 14 (0.62 V, vs. Mg/Mg 2+ ) . Nevertheless, the limited electrochemical performance of these hybrid Mg−Li batteries is not satisfactory.…”

Section: Introductionmentioning

confidence: 99%

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Spinel Li₄Mn₅O₁₂ as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries

et al. 2020

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With the increasing demand for electrical energy storage, a new Mg−Li hybrid battery with Mg anode is regarded as a promising candidate because of low cost, high volumetric capacity, and dendrite‐free nature of the Mg anode. Nevertheless, the characteristics of low operation voltage and low energy density for Mg−Li hybrid batteries hinders their widespread application, owing to limited reversible cathodes. To overcome these issues, a highly reversible fast Li+ insertion cathode with high voltage is an effective strategy to realize high‐energy‐density Mg−Li hybrid batteries. Herein, we develop the 2 V high‐voltage spinel Li4Mn5O12 cathode material with unique nano‐/microspheres, using a novel low‐temperature method, offering a short Li‐diffusion path and sufficient transport channels for electrolyte penetration into the electrode. For the first time, we demonstrate the feasibility of the spinel Li4Mn5O12 nano‐/microspheres with hierarchical architecture as a cathode for 2 V hybrid Mg−Li batteries. It exhibits a reversible specific capacity of 155 mAh g−1 and a long discharge voltage platform exceeding 2.0 V (vs. Mg/Mg2+) coupled with high energy density of 326 Wh kg−1 at a current density of 0.1 C (1 C=163 mA g−1). Our results pave the way of constructing new hybrid Mg−Li batteries with high voltage and high energy density.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Spinel Li₄Mn₅O₁₂ as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries

et al. 2020

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“…[14,15] Notably, as a family member of III-nitrides, hexagonal BN (h-BN) owes better growth compatibility than other 2D materials for the epitaxy of III-nitride films and is thus believed to be the most suitable 2D material for III-nitrides epitaxy. [16,17] However, the integration between h-BN and conventional IIInitride film still remains a challenge due to the difficulty in combining different atomic hybridization. [18][19][20][21] In fact, it is very difficult to form covalent bonds on 2D materials due to the absence of dangling bonds.…”

Section: Doi: 101002/advs202000917mentioning

confidence: 99%

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Liu

Zhang

et al. 2020

Advanced Science

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Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al 2 O 3 substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides B—O—N and N—O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices.

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“…[ 5–9 ] In addition, the intermolecular dispersion interaction from graphene can largely relieve the stress between the substrate and the epilayer, leading to the epitaxy growth of strain‐relaxed III‐nitride materials. [ 10,11 ] Furthermore, it allows the transfer of epitaxial structures easily and eliminates the residual strain in the structures when they are released from the hetero‐substrates. [ 12–14 ] Till now, most efforts of III‐nitrides epitaxy are based on metal organic vapor phase epitaxy (MOVPE), where an AlN nucleation/buffer layer is necessary to guarantee the successful epitaxy of GaN.…”

Section: Introductionmentioning

confidence: 99%

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Liu

Zhang

Rong

et al. 2020

Adv Funct Materials

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Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga-polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen-polarity GaN films on transferred graphene on non-polar sapphire substrates by molecular beam epitaxy is reported. This success is achieved through atomic nitrogen irradiation, where CN bonds are formed in graphene and provide nucleation sites for GaN and leading to N-polarity GaN epitaxy. The N-polarity characteristics are confirmed by chemical etching and transmission electron microscopy measurement. Due to the higher growth temperature of InGaN at N-polarity than that at Ga-polarity, green light emitting diodes are fabricated on the graphene-assisted substrate, where a large redshift of emission wavelength is observed. These results open a new avenue for the polarity modulation of III-nitride films based on 2D materials, and also pave the way for potential application in longer wavelength light emitting devices. nucleation but also lead to the N-lattice-polarity of the following grown GaN, as further confirmed by chemical etching and transmission electron microscopy measurement. The subsequent growth by MOVPE follows the N-lattice-polarity, which makes it easy to obtain the high In-composition InGaN and thus to fabricate the N-polarity nitrides-based green LEDs on graphene/sapphire for the first time.

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Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

Abstract: The growth mechanism and dislocation behavior of AlN on monolayer hBN materials without/with O2 plasma treatment by MOCVD.

Cited by 34 publications

References 40 publications

Spinel Li₄Mn₅O₁₂ as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries

Spinel Li₄Mn₅O₁₂ as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

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Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition

Abstract: The growth mechanism and dislocation behavior of AlN on monolayer hBN materials without/with O2 plasma treatment by MOCVD.

Cited by 34 publications

References 40 publications

Spinel Li4Mn5O12 as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries

Spinel Li4Mn5O12 as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

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Product

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Spinel Li₄Mn₅O₁₂ as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries

Spinel Li₄Mn₅O₁₂ as 2.0 V Insertion Materials for Mg‐Based Hybrid Ion Batteries