Growth kinetics of silicon dioxide on silicon in an inductively coupled rf plasma at constant anodization currents

Choksi, A.J.; Lal, R. B.; Chandorkar, A. N.

doi:10.1063/1.351724

Cited by 9 publications

(4 citation statements)

References 34 publications

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“…It is not within the scope of this article to speculate over the exact growth mechanism. Some thoughts and an overview of the field can be found in the paper by Choksi et al, 25 The importance of the field-assisted drift components inside the oxide has been discussed in Ref. 26.…”

Section: Discussionmentioning

confidence: 99%

Oxidation and Induced Damage in Oxygen Plasma In Situ Wafer Bonding

Pasquariello

Hedlund

Hjort

2000

J. Electrochem. Soc.

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Section: Discussionmentioning

confidence: 99%

Oxidation and Induced Damage in Oxygen Plasma In Situ Wafer Bonding

Pasquariello

Hedlund

Hjort

2000

J. Electrochem. Soc.

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“…Helium is also known as a buffer gas in reactive mixtures and it can be mixed to improve plasma uniformity. For molecular gases, oxygen discharge is applied in the etching of photoresist [3] and growth of thin-film oxides [4], and nitrogen discharge is suitable as N atom source for growth of nitride film [5]. 1 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Measurements of the total energy lost per electron–ion pair lost in low-pressure inductive argon, helium, oxygen and nitrogen discharge

Lee¹,

Ku²,

Chung³

2011

Plasma Sources Sci. Technol.

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Experimental measurements of the total energy lost per electron-ion pair lost, ε T , were performed in a low-pressure inductive atomic gases (Ar, He) and molecular gases (O 2 , N 2 ) discharge. The value of ε T was determined from a power balance based on the electropositive global (volume-averaged) model. A floating harmonic method was employed to measure ion fluxes and electron temperatures at the discharge wall. In the pressure range 5-50 mTorr, it was found that the measured ε T ranged from about 70 to 150 V for atomic gases, but from about 180 to 1300 V for molecular gases. This difference between atomic and molecular discharge is caused by additional collisional energy losses of molecular gases. For argon discharge, the stepwise ionization effect on ε T was observed at relatively high pressures. For different gases, the measured ε T was evaluated with respect to the electron temperature, and then compared with the calculation results, which were derived from collisional and kinetic energy loss. The measured ε T and their calculations showed reasonable agreement.

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“…The oxidation rate of thicker oxide layers (Ͼ4 nm) is only enhanced by a positive bias, as expected for the electrical drift of oxygen ions in SiO 2 . Choksi et al 29 have formulated a model for the growth kinetics of silicon dioxide in a galvanostatic experiment. He also takes the drift of oxygen anions into account.…”

Section: Discussionmentioning

confidence: 99%

Plasma Electrochemistry in Radio Frequency Discharges

Vennekamp

Janek

2003

J. Electrochem. Soc.

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Plasma-anodic experiments on the oxidation of silver electrodes were performed in an inductively coupled chlorine plasma in the temperature range between 50 and 180°C. Pure chlorine plasmas with gas pressures on the order of 1 mbar were employed. The growth rate of the silver chloride films was strongly enhanced in the plasma compared to thermal conditions, and it could be controlled effectively by applying an external electric potential under both galvanostatic and potentiostatic conditions. An analysis of the growth kinetics of the silver halide film shows that the growth rate is limited by the electron flux across the product film in the thermal experiment and across the plasma in the plasma-anodic experiment. It is experimentally shown that the thickness of the product layer is proportional to the electrical charge passed through the plasma-electrochemical cell Ag/AgCl/plasma/carbon. Current densities across the product layer were in the order of 1 mA/cm 2 . The enhancement of the growth rate is smaller than predicted by Faraday's law, indicating either electronic leakage currents or anode sputtering.Gaseous low-temperature plasmas exhibit nonzero electrical conductivity, and they are used as fluid conductors and highly reactive media in a number of technical applications. Most of these industrial applications employ plasmas in the chemical modification of solid surfaces. Studying ion-conducting crystals, their transport properties, and application, we decided to investigate whether gaseous plasmas can also be used in a quasi-electrochemical approach to control reactions between solid electrolytes and the gas phase.In electrochemistry a plasma can be regarded as a fluid mixed conductor with low ionic conductivity but high electronic conductivity, i.e., with a small ionic transference number, but the analogy to conventional liquid or solid electrolytes is not straightforward. Extended space-charge regions exist at the boundaries of any nonequilibrium plasma as a consequence of ambipolar diffusion of charged plasma species from the plasma bulk to the plasma wall. These kinetically driven space-charge regions ͑diffusion potentials͒ lead to strongly nonlinear transport properties of the plasma as a whole. Correspondingly, the possible use of gaseous plasmas in either liquid or solid-state electrochemistry is not yet well investigated, and applications in electrochemistry are rare. In addition, plasmas usually contain a variety of excited atomic and molecular species which complicate the theoretical modeling on the microscopic scale.Besides some historical experiments with glow discharges and aequeous electrolytes more than a hundred years ago, 1 only recently a few electrochemical experiments were performed using electrodeless radio frequency ͑rf͒ or W discharges. Focusing on solid-state electrochemistry, experiments with halogen-containing plasmas were reported by Uchimoto and Ogumi et al.,2,3 Escoffier et al.,4,5 and by this group of the authors. 6-9 To our knowledge no other experimental studies on plasma elec...

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Growth kinetics of silicon dioxide on silicon in an inductively coupled rf plasma at constant anodization currents

Cited by 9 publications

References 34 publications

Oxidation and Induced Damage in Oxygen Plasma In Situ Wafer Bonding

Oxidation and Induced Damage in Oxygen Plasma In Situ Wafer Bonding

Measurements of the total energy lost per electron–ion pair lost in low-pressure inductive argon, helium, oxygen and nitrogen discharge

Plasma Electrochemistry in Radio Frequency Discharges

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