Growth-in-place deployment of in-plane silicon nanowires

Yu, Linwei; Chen, Wanghua; O’Donnell, Benedict; Patriarche, G.; Bouchoule, S.; Pareige, P.; Rogel, Régis; Salaün, Anne‐Claire; Pichon, Laurent; Cabarrocas, Pere Roca i

doi:10.1063/1.3659895

Cited by 44 publications

(60 citation statements)

References 17 publications

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“…These results are similar to guided growth with In shown in Fig. a and recently reported for in‐plane In‐catalysed Si nanowires . These results provide clear evidence that this guided growth method can be used for fabrication of predefined shapes and structures of Si nanowires.…”

Section: Resultssupporting

confidence: 89%

“…a and b). Figure a shows that this method produces in‐plane Si nanowires for In, similarly as previously reported by others . On the other hand, Pb catalyst failed to produce Si nanowires at these conditions (Fig.…”

Section: Resultssupporting

confidence: 86%

“…The concentration of H in the layers was estimated from these two peaks following a procedure described in Ref. . As expected, the H content of the low temperature sample (a‐Si:H_M1) is almost twice as higher than for high temperature sample (a‐Si:H_M2).…”

Section: Resultsmentioning

confidence: 86%

“…To solve this challenge, several different metal catalysts have been investigated over the last years . One of the possible candidates is indium, which has recently attracted significant attention because it catalyses in‐plane Si nanowires that grow laterally on a substrate surface . The unique feature of this in‐plane nanowire growth is that it can be guided by different surface features, such as step edges, to produce different nanowire structures .…”

Section: Introductionmentioning

confidence: 99%

“…The unique feature of this in‐plane nanowire growth is that it can be guided by different surface features, such as step edges, to produce different nanowire structures . The guided growth using In has recently been used for the fabrication of a silicon nanowire bottom‐gated field‐effect transistor with hole mobility of 228 cm 2 V −1 s −1 , showing great promise for electronic applications.…”

Section: Introductionmentioning

confidence: 99%

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Role of a‐Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts

Kočka

Müller

Stuchlı́k

et al. 2016

Physica Status Solidi (a)

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Growth of crystalline silicon nanowires at low temperatures by chemical vapour deposition is an important technological challenge for electronic and sensor nanodevices. Here we present a comparative study of crystalline silicon nanowire growth by plasma‐enhanced chemical vapour deposition (PECVD) using lead and indium. We compare two different growth methods that produce either in‐plane or out‐of‐plane crystalline Si nanowires (SiNWs) at temperatures below 400 °C depending on the growth conditions and the catalyst used. The first growth method is based on the deposition of a thin film of amorphous silicon on a substrate at 150 °C and subsequent thermal annealing at 400 °C. The second method uses direct SiNWs growth at 400 °C in PECVD. While the first method produces in‐plane Si nanowires with In and no nanowire growth for Pb, the second method gives rise to out‐of‐plane Si nanowires for In and in‐plane nanowires for Pb. We show that one of the reasons for the difference between these two methods is the properties of amorphous hydrogenated silicon (a‐Si:H), which acts as the source material for in‐plane growth of Si nanowires.

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Section: Resultssupporting

confidence: 89%

Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Role of a‐Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts

Kočka

Müller

Stuchlı́k

et al. 2016

Physica Status Solidi (a)

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In‐Plane Self‐Turning and Twin Dynamics Renders Large Stretchability to Mono‐Like Zigzag Silicon Nanowire Springs

Xue

et al. 2016

Adv Funct Materials

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Crystalline Si nanowire (SiNW) springs, produced via a low temperature (<350 °C) thin fi lm technology, are ideal building blocks for stretchable electronics. Herein, a novel cyclic crystallographic-index-lowering self-turning and twin dynamics is reported, during a tin-catalyzed in-plane growth of SiNWs, which results in a periodic zigzag SiNW without any external parametric intervention. More interestingly, a unique twin-refl ected interlaced crystaldomain structure has been identifi ed for the fi rst time, while in situ and realtime scanning electron microscopy observations reveal a new twin-triggering growth mechanism that is the key to reset a complete zigzag growth cycle. Direct "stress-strain" testing of the SiNW springs demonstrates a large stretchability of 12% under tensile loading, indicating a whole new strategy and capability to engineer mono-like SiNW channels for high performance stretchable electronics.

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Planar Growth, Integration, and Applications of Semiconducting Nanowires

Sun

Dong

et al. 2019

Advanced Materials

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Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high‐performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More‐than‐Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line‐shape of NWs on planar or out‐of‐plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in‐plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line‐shape engineering are reviewed, followed by their latest device applications in building high‐performance field‐effect transistors, photodetectors, stretchable electronics, and 3D stacked‐channel integration.

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Growth-in-place deployment of in-plane silicon nanowires

Cited by 44 publications

References 17 publications

Role of a‐Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts

Role of a‐Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts

In‐Plane Self‐Turning and Twin Dynamics Renders Large Stretchability to Mono‐Like Zigzag Silicon Nanowire Springs

Planar Growth, Integration, and Applications of Semiconducting Nanowires

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