2018
DOI: 10.1063/1.5004425
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Growth dependent magnetization reversal in Co2MnAl full Heusler alloy thin films

Abstract: Angular dependent magnetization reversal has been investigated in Co2MnAl (CMA) full Heusler alloy thin films grown on Si(100) at different growth temperatures (Ts) by DC-magnetron sputtering. An M-shaped curve is observed in the in-plane angular (0°–360°) dependent coercivity (ADC) by magneto-optical Kerr effect measurements. The dependence of the magnetization reversal on Ts is investigated in detail to bring out the structure-property correlation with regards to ADC in these polycrystalline CMA thin films. … Show more

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Cited by 18 publications
(2 citation statements)
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“…included in these tables for comparison, serve as a cross-check for the values of H k obtained from the H r (ϕ H ) data. The reduction in H k with increasing deposition temperature is directly related to the defect density in the multi-domain films [53]. The equilibrium magnetization angle, ϕ M , is plotted against the corresponding field angle ϕ H for all the CFS films in figure 6.…”
Section: Angular Variations Of the Resonance Field And Fmr Line-mentioning
confidence: 99%
“…included in these tables for comparison, serve as a cross-check for the values of H k obtained from the H r (ϕ H ) data. The reduction in H k with increasing deposition temperature is directly related to the defect density in the multi-domain films [53]. The equilibrium magnetization angle, ϕ M , is plotted against the corresponding field angle ϕ H for all the CFS films in figure 6.…”
Section: Angular Variations Of the Resonance Field And Fmr Line-mentioning
confidence: 99%
“…In several studies in the literature, unusual angulardependent magnetism is always seen in the FeCoB-and MgO-based systems and is always attributed to the uniaxial magnetic anisotropy, which does not follow the standard Stoner-Wohlfarth model [34,36,[62][63][64] of magnetic anisotropy. For example, Kipgen et al observed MA in ionbeam sputtered FeCoB on Si(001) substrate and argued that this MA is strain induced where the crystallographic orientation of the underlying Si(001) substrate played an important role in the anisotropy of the film [35].…”
Section: Discussionmentioning
confidence: 99%