Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate

Saidi, F.; Bouzaı̈ene, L.; Sfaxi, L.; Maâref, H.

doi:10.1016/j.jlumin.2011.08.013

Cited by 12 publications

(13 citation statements)

References 26 publications

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“…The QD morphology is highly asymmetric, with a U-shape ( Figure 1 b). We attribute the formation mechanism of these asymmetric QDs to the low-intensity As

supply for the crystallization of the droplets and surface asymmetry of the (311)A surface [ 19 , 32 , 38 , 60 , 63 , 64 , 65 , 72 ]. In this growth condition, the Ga droplets crystallization into GaAs is enhanced around the edge of the droplets.…”

Section: Resultsmentioning

confidence: 99%

“…Within this class of QDs, droplet epitaxy (DE) [ 10 , 13 , 14 ] and droplet etching [ 9 , 15 , 16 ] (alternative growth protocols to Stranski–Krastanov for strain-free III–V-based semiconductor nanostructures), enabled the fabrication of state-of-the-art devices such as lasers [ 17 , 18 , 19 , 20 , 21 ] and quantum emitters, including single-photon sources [ 22 , 23 , 24 , 25 , 26 ] and entangled photons [ 9 , 27 , 28 , 29 , 30 ] with electrical injection [ 31 ]. The versatility of this method allowed to grow many different semiconductor alloys (GaInSb [ 32 ], AlGaAs [ 33 , 34 , 35 , 36 , 37 ], InGaAs [ 38 , 39 , 40 , 41 , 42 , 43 , 44 ], and InGaP [ 26 , 45 , 46 ]), forming a plethora of nanostructures [ 47 ] such as quantum dots (QDs); QDs diads [ 48 , 49 , 50 ]; multiple-concentric quantum rings [ 18 , 23 , 51 , 52 ...…”

Section: Introductionmentioning

confidence: 99%

“…Another aspect relevant for applications is the possibility to grow high-quality nanostructures on different substrate orientation, providing the ground for highly symmetric QDs on (111)A surfaces [ 26 , 27 , 35 , 36 , 41 , 42 , 46 , 61 , 68 , 69 , 70 , 71 ] (e.g., for entangled photon pairs generation) and for ultra-high density quantum wires [ 60 ] and QDs [ 19 , 32 , 38 , 63 , 64 , 65 , 72 , 73 ] formation on the highly anisotropic (311)A surface (e.g., for laser emission). This latter class of nanostructures grown on (311)A surface has not yet been thoroughly investigated and a clear assessment of the corresponding excitonic dynamics has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

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Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

et al. 2020

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Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III–V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting layer. These are appealing features for quantum dot lasing, thanks to the large density of quantum emitters and a truly 3D lateral confinement. However, the intimate photophysics of this class of nanostructures has not yet been investigated. Here, we address the main optical and electronic properties of s-shell excitons in individual quantum dots grown on (311)A substrates with photoluminescence spectroscopy experiments. We show the presence of neutral exciton and biexciton as well as positive and negative charged excitons. We investigate the origins of spectral broadening, identifying them in spectral diffusion at low temperature and phonon interaction at higher temperature, the presence of fine interactions between electron and hole spin, and a relevant heavy-hole/light-hole mixing. We interpret the level filling with a simple Poissonian model reproducing the power excitation dependence of the s-shell excitons. These results are relevant for the further improvement of this class of quantum emitters and their exploitation as single-photon sources for low-density samples as well as for efficient lasers for high-density samples.

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“…The QD morphology is highly asymmetric, with a U-shape ( Figure 1 b). We attribute the formation mechanism of these asymmetric QDs to the low-intensity As

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

et al. 2020

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“…This has led researchers to growing the InGaAs / GaAs (111) QDs by other techniques such as the droplet epitaxy technique and atomic layer epitaxy [1,29]. However, the formation of QDs on GaAs (113) substrate is not very difficult and it is now to be optimized [25,30,31].…”

Section: A Effect Of the Substrate Orientation On The Strain Distribmentioning

confidence: 99%

Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Bennour

Bouzaı̈ene

Saidi

et al. 2015

Journal of Alloys and Compounds

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“…An appealing possibility offered by DE is the growth of nanostructures on different substrate orientations: in addition to the conventional (001), QDs can be grown on the three-fold symmetric (111)A surface [ 25 , 26 , 49 , 56 , 58 , 59 , 60 , 61 , 62 , 63 , 64 , 65 ] (e.g., for the fabrication of sources of entangled photons) and on the highly anisotropic (311)A surface [ 17 , 34 , 47 , 50 , 51 , 52 , 66 , 67 , 68 , 69 ] (e.g., to obtain large QDs density for laser emission). These substrate orientations affect the QDs properties and, in turn, their photophysics by modifying the confining potential (e.g., symmetry) for electrons and holes, and are thus a key tool for engineering the exciton dynamics and the corresponding optical properties.…”

Section: Introductionmentioning

confidence: 99%

Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy

et al. 2021

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We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001), and (111)A surfaces. Despite a similar s-shell exciton structure common to the three cases, the absence of a wetting layer for (311)A and (111)A samples leads to a larger carrier confinement compared to (001), where a wetting layer is present. This leads to a more pronounced dependence of the binding energies of s-shell excitons on the quantum dot size and to the strong anti-binding character of the positive-charged exciton for smaller quantum dots. In-plane geometrical anisotropies of (311)A and (001) quantum dots lead to a large electron-hole fine interaction (fine structure splitting (FSS) ∼100 μeV), whereas for the three-fold symmetric (111)A counterpart, this figure of merit is reduced by about one order of magnitude. In all these cases, we do not observe any size dependence of the fine structure splitting. Heavy-hole/light-hole mixing is present in all the studied cases, leading to a broad spread of linear polarization anisotropy (from 0 up to about 50%) irrespective of surface orientation (symmetry of the confinement), fine structure splitting, and nanostructure size. These results are important for the further development of ideal single and entangled photon sources based on semiconductor quantum dots.

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Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (113)A substrate

Cited by 12 publications

References 26 publications

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy

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