Growth condition dependence of structural and electrical properties of Mg2Si layers grown on silicon substrates

Hu, Junhua; Sato, Yohei; Hosono, T.; Tatsuoka, Hirokazu

doi:10.1016/j.vacuum.2009.06.055

Cited by 30 publications

(24 citation statements)

References 19 publications

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“…No orientation relationship is observed between Mg 2 Si and MgO. It has been reported that the significant excess of Mg flux in the growing layer degrades the crystalline quality [4].…”

Section: Fig 4: Tem Images and Corresponding Fft Patterns Of The Nanmentioning

confidence: 96%

“…• C [1][2][3][4]. Although Mg 2 Si possesses many significant advantages such as the high abundance and low toxicity of its constituent elements, it has lower ZT than the more common thermoelectric materials.…”

Section: Introductionmentioning

confidence: 99%

“…Mg 2 Si layers have been grown on Si substrate in Mg vapor by thermal treatment [4]. Although growth of Mg 2 Si nanostructures using Si nanostructures as template has been considered, the growth procedure of Si nanostructures is complicate.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of Mg2Si/MgO Nanofibers Using SiO2 Nanofibers in Mg Vapor

Yang

Tatsuoka

2012

e-J. Surf. Sci. Nanotechnol.

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Mg2Si/MgO nanofibers were synthesized by the heat treatment of amorphous SiO2 nanofibers in Mg vapor, and their morphological and structural properties were then investigated. Well-aligned Mg2Si/MgO nanofibers with high density were synthesized, which preserves the general morphology of the original SiO2 nanofibers. The morphology and crystalline quality of Mg2Si/MgO nanofibers depend on the reaction temperature. This reaction provides a low cost method to synthesize nanoscale thermoelectric materials with high crystalline quality to enhance thermoelectric properties.

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“…No orientation relationship is observed between Mg 2 Si and MgO. It has been reported that the significant excess of Mg flux in the growing layer degrades the crystalline quality [4].…”

Section: Fig 4: Tem Images and Corresponding Fft Patterns Of The Nanmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Synthesis of Mg2Si/MgO Nanofibers Using SiO2 Nanofibers in Mg Vapor

Yang

Tatsuoka

2012

e-J. Surf. Sci. Nanotechnol.

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“…Magnesium silicide (Mg 2 Si), having an anti-CaF 2 structure and a lattice constant of 0.6351 nm, was reported as a narrow-band-gap semiconductor with an indirect band gap of 0.6-0.8 eV [3]. It has been considered as an ecologically friendly n-type thermoelectric material due to the sufficiently abundant and environmentally harmless of its constituent elements.…”

mentioning

confidence: 99%

“…On the other hand, periodic Si nanorods have been successfully fabricated under monodispersed polystyrene nanospheres assisted. Because of the high diffusion coefficient of Mg in Mg 2 Si, the Mg 2 Si layers with a smooth Mg 2 Si/Si interface have been successfully grown by the exposure of Si substrates under Mg vapor [3].…”

mentioning

confidence: 99%

Synthesis of Mg₂Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

Nakane

Suzuki

et al. 2013

Phys. Status Solidi C

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Periodic Mg2Si nanorod arrays were synthesized by the heat treatment of Si nanorod arrays with porous structure under Mg vapor. The structural properties of the Si and Mg2Si nanorods were investigated. The morphology of the Si nanorod arrays is preserved in the Mg2Si nanorod arrays. The diameter and height of the Mg2Si nanorods were significantly increased to 420 nm and 600 nm compared to those of the Si nanorods. The volumetric expansion from Si nanorods to Mg2Si nanorods is about V Mg 2Si/VSi = 1.55 and the density of Si nanorods with porous structure is about 48.3%. Periodic Mg2Si nanorod arrays will be useful to control thermal and/or solar radiation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Infiltration of Cellular Silicon by Molten Magnesium Alloys

et al. 2017

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Open-pore cellular Si structures are manufactured by investment casting and, subsequently, infiltrated with molten Mg(-Sn), representing the initial state for a formation of the intermetallic compound Mg 2 Si 1-x Sn x . The processing parameters which govern the evolution of microstructure after the infiltration process are studied in the alloy systems Mg-Si and Mg-Si-Sn. The resulting microstructures are analyzed using SEM and EDS. It is found that an initial diffusion layer is already formed after infiltration. Its thickness can slightly be increased by raising the infiltration temperature of the Mg(-Sn) melt. A variation in mold temperature does not show a noticeable impact. The comparison of the diffusion layer formed in the systems Mg-Si and Mg-Si-Sn showed that a lower Sn content resulted in thicker layers.

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Growth condition dependence of structural and electrical properties of Mg2Si layers grown on silicon substrates

Cited by 30 publications

References 19 publications

Synthesis of Mg<sub>2</sub>Si/MgO Nanofibers Using SiO<sub>2</sub> Nanofibers in Mg Vapor

Synthesis of Mg<sub>2</sub>Si/MgO Nanofibers Using SiO<sub>2</sub> Nanofibers in Mg Vapor

Synthesis of Mg₂Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

Infiltration of Cellular Silicon by Molten Magnesium Alloys

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Growth condition dependence of structural and electrical properties of Mg2Si layers grown on silicon substrates

Cited by 30 publications

References 19 publications

Synthesis of Mg<sub>2</sub>Si/MgO Nanofibers Using SiO<sub>2</sub> Nanofibers in Mg Vapor

Synthesis of Mg<sub>2</sub>Si/MgO Nanofibers Using SiO<sub>2</sub> Nanofibers in Mg Vapor

Synthesis of Mg2Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor

Infiltration of Cellular Silicon by Molten Magnesium Alloys

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Product

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Synthesis of Mg₂Si nanorod arrays by the heat treatment of Si nanorod arrays under Mg vapor