Growth, characterization and photoconduction properties of Sb0.1Mo0.9Se2 single crystals grown by DVT technique

Dixit, V. K.; Nair, Salil; Joy, Jolly; Vyas, C. U.; Solanki, G. K.; Patel, K. C.; Pathak, V. M.

doi:10.1016/j.mssp.2018.07.026

Cited by 19 publications

(9 citation statements)

References 54 publications

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“…1a. 19,20 MoSe 2 and WSe 2 nanocrystal suspensions are obtained from this bulk material by a typical liquidphase exfoliation method shown in Figure 1b. For this, 0.7 g of reacted powder is well pulverized in a mortar and dispersed in 1:1 (v/ v) ratio of ethanol/acetone at a concentration of 20 mg/mL.…”

Section: Methodsmentioning

confidence: 99%

“…Elemental constituents for the growth of bulk MoSe 2 and WSe 2 are vapor-phase reacted and transported to the growth zone of a two-zone horizontal furnace by the DVT technique, as shown in Figure a. , MoSe 2 and WSe 2 nanocrystal suspensions are obtained from this bulk material by a typical liquid-phase exfoliation method shown in Figure b. For this, 0.7 g of reacted powder is well pulverized in a mortar and dispersed in 1:1 (v/v) ratio of ethanol/acetone at a concentration of 20 mg/mL.…”

Section: Methodsmentioning

confidence: 99%

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Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Patel¹,

Machhi²,

Chauhan³

et al. 2019

ACS Appl. Mater. Interfaces

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The solar response ability and low-cost fabrication of the photoanode are important factors for the effective output of the photoelectrochemical system. Modification of the photoanode by which its ability to absorb irradiation can be manipulated has gained tremendous attention. Here, we demonstrated the MoSe 2 , WSe 2 , and MoSe 2 /WSe 2 nanocrystal thin films prepared by the liquid-phase exfoliated and electrophoresis methods. Atomic force microscopy and high-resolution transmission electron microscopy show that the liquid exfoliated nanocrystals have a few layered dimensions with good crystallinity. Scanning electron microscopy demonstrated uniform distribution and randomly oriented nanocrystals, having a homogeneous shape and size. X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectra confirm the equal contribution of MoSe 2 and WSe 2 nanocrystals in the formation of the MoSe 2 /WSe 2 heterojunction. Because of superior absorption of MoSe 2 /WSe 2 heterojunction in the visible region and type-II heterojunction band alignment, in situ measurement of heterojunction electrode shows almost 1.5 times incident photo-to-current conversion efficiency and photoresponsivity in comparison to individual material electrodes. Our result clearly indicates the influence of heterojunction formation between liquid exfoliated nanocrystals on effective separation of photogenerated exciton and enhances charge carrier transfer, which leads to the improvement in photoelectrochemical performance. Liquid exfoliated nanosheet-based heterojunction is attractive as efficient photoanodes for the photoelectrochemical systems.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Patel¹,

Machhi²,

Chauhan³

et al. 2019

ACS Appl. Mater. Interfaces

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“…In Figure 3A,B, the hexagonal‐shaped spirals indicate the screw dislocations that occur during the growth mechanism of the crystals. Such spirals of different shapes are quite common in crystals grown by the DVT technique showing the growth from the vapour phase 21,22 . The shapes of the spirals are defined based on the rate of movement of dislocations in different directions.…”

Section: Resultsmentioning

confidence: 99%

“…Such spirals of different shapes are quite common in crystals grown by the DVT technique showing the growth from the vapour phase. 21,22 The shapes of the spirals are defined based on the rate of movement of dislocations in different directions. Concurrently, the layered structure of the crystals can be seen at the edges of the crystal, which is due to the termination of the layers.…”

Section: Characterization Techniquesmentioning

confidence: 99%

Enhancement in the transient visible light anisotropic photoresponse of cobalt‐incorporated tungsten diselenide ternary alloy

Joy

Nair

Dixit

et al. 2021

Intl J of Energy Research

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Anisotropy in the optical and electrical properties of many transition metal dichalcogenides provides a great variety of possibilities for device applications.The present work attempts to exploit the anisotropy in photoresponse of pure and Co-incorporated WSe 2 crystals. Energy-dispersive analysis of X-rays affirmed the elemental composition of the crystals grown by the direct vapour transport technique. The surface morphology of the crystals was studied by optical microscopy and scanning electron microscopy, both of which confirmed the layered structure of the same. Layers of the samples and the lattice fringes were concluded under high-resolution transmission electron microscopy. The crystalline nature and hexagonal phase of the crystals were confirmed from X-ray diffraction, further highlighted in the results observed from the selected area electron diffraction pattern. Anisotropic charge conduction properties under illumination due to the layered structure of the sample were analysed. The anisotropy in the photoresponse was confirmed from the current-voltage (I-V) characteristics, which were further explored from its time-dependent photoresponse. The crystals proved to be self-powered photodetectors with higher values of photocurrent (μA), photoresponsivity (μAW À1 ) and photodetectivity (~10 7 -10 8 Jones) recorded for contacts taken parallel to the crystallographic c-axis of the crystals. The effect of Co in improving the photoconductivity of WSe 2 has been analysed based on the photoresponse recorded for pure and Co-incorporated WSe 2 . The present work also illustrates the effect of intensities of illumination and wavelengths of incident radiations in the photocurrent. Photocurrent in μA range observed in the absence of biasing voltage makes the crystals suitable candidates for self-powered photodetection applications.

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“…Their absorption tail ascends two reasons. Firstly, due to the presence of impurities and defects within the layered materials [38]. Secondly, due to the interaction of electrons/excitons with phonons within the layered semiconductors [39,40].…”

Section: Resultsmentioning

confidence: 99%

Investigation of optical, electrical and optoelectronic properties of SnSe crystals

et al. 2019

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The optical, electrical and optoelectronic properties of tin selenide crystals are of immense significance for application in photodetectors and energy conversion and storage devices. The transition metal chalcogenides possess a layered structure that interacts with each other through van der Waal forces and can also offer sites for intercalation. The low molecular weight materials like GeSe and SnSe are found in an orthorhombic structure. In this article, the optical, electrical and optoelectronic properties of as-grown tin selenide crystals are investigated. The chemical composition of the crystals grown with the aid of direct vapour transport (DVT) technique is confirmed through energy Dispersive analysis of X-rays (EDAX), at the same time the morphological analysis is accomplished using optical microscopy and Scanning Electron Microscopy (SEM). The grown crystals are characterized by powder X-ray diffraction (XRD) method to assess the structural properties of the material. The XRD evaluation found out the orthorhombic structure of the crystals with the space group 16 2h D (P cmn) having lattice parameters a = 11.490 Å, b = 4.440 Å and c = 4.135 Å. The crystallinity of grown samples was verified by transmission electron microscopy (TEM). The single crystalline nature of grown crystals was revealed by SAED pattern. The indirect optical band gap of 1.0065 eV, Urbach energy and steepness parameter are calculated utilising UV-VIS-NIR spectrophotometer. The optical absorption of as-grown SnSe crystals has been measured close to the fundamental absorption edge at room temperature. Both types of transitions, i.e. direct and indirect, are involved in the absorption process. Electrical transport properties like resistivity measurements (parallel and perpendicular path to the c-axis) had been carried out on these crystals within the temperature range 297-673 K. Anisotropy in resistivity measurements in both the directions, i.e. parallel and perpendicular direction to the c-axis was discovered. The p-type semiconducting nature was confirmed with the aid of Hall-effect measurements. For the photodetection properties of SnSe crystals, light source (670 nm) having an intensity of 3 mW/cm 2 at distinctive biasing voltages is used. The outstanding detection properties are revealed from the responsivity, specific detectivity and external quantum efficiency (EQE) of pure SnSe crystals.

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Growth, characterization and photoconduction properties of Sb0.1Mo0.9Se2 single crystals grown by DVT technique

Cited by 19 publications

References 54 publications

Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Enhancement in the transient visible light anisotropic photoresponse of cobalt‐incorporated tungsten diselenide ternary alloy

Investigation of optical, electrical and optoelectronic properties of SnSe crystals

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Growth, characterization and photoconduction properties of Sb0.1Mo0.9Se2 single crystals grown by DVT technique

Cited by 19 publications

References 54 publications

Electrophoretically Deposited MoSe2/WSe2 Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Electrophoretically Deposited MoSe2/WSe2 Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Enhancement in the transient visible light anisotropic photoresponse of cobalt‐incorporated tungsten diselenide ternary alloy

Investigation of optical, electrical and optoelectronic properties of SnSe crystals

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Product

Resources

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Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse