Growth, characterization and modeling of alternating-current thin-film electroluminescent devices

8.3: Flexible Infrared Emitting ZnS:ErF[sub 3] Alternating Current Thin Film Electroluminescent Devices

“…Electrical characterization was performed using the standard methodology [7,8,9], a synopsis of which follows. The external charge (Q ext ) was determined from time integration of the external current, and the total capacitance (C t ) of the device was determined from the slope of the 'pre-threshold' Q ext vs. V plot.…”

“…Having measured the total device and insulator capacitances, the phosphor capacitance was calculated (C p =C i C t /C i -C t ). The conduction charge was then derived according to [7,8]:…”

Improved Human Factors of Electroluminescent Displays using Optical Interference Effect

“…Efficiency of the transparent cathode, however, as well as efficiency of transparent organic electron-ejecting materials is not sufficient for their wide use. A preferred way to achieve high contrast is cancellation of ambient light reflected from the back electrode and other interfaces in the display [6], which can be done using several methods. All these methods can be divided into external and internal.…”

Field-induced light emission from a close-packed Mn-doped ZnS quantum-dot layer in an alternate-current thin-film electroluminescent configuration

“…16 The physical mechanism at the origin of the emission of light from these devices is the impact-excitation of the chromophores (the manganese centers), due to free charges moving in the bulk phosphor layer because of the high electric field (EF) induced in it. [17][18][19] The use of colloidal QDs and the ongoing device miniaturization paved the way to the design of a new generation of devices, the QD-based ACTFELs. The most successful designs were obtained by depositing colloidal heterostructured QDs, typically core-shell II-VI semiconductive nanoparticles (NPs), like CdSe-ZnS, in between submicrometer-sized alumina layers.…”