Growth, characterization, and Chern insulator state in 
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 via the chemical vapor transport method

Hu, Chaowei; Gao, Anyuan; Berggren, Bryan; Li, Hong; Kurleto, R.; Narayan, Dushyant; Zeljkovic, Ilija; Dessau, D. S.; Xu, Su-Yang; Ni, Ni

doi:10.1103/physrevmaterials.5.124206

Cited by 22 publications

(28 citation statements)

References 46 publications

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“…According to the experimental results, − point defects such as Mn Bi and Bi Mn antisite defects have been identified in MnBi 2 Te 4 even after careful annealing. In order to determine the dominant defects in the MnTe/Bi 2 Te 3 and MnBi 2 Te 4 monolayers, we have explored the stable region of MnBi 2 Te 4 monolayers (shown in Figure S1) to determine the chemical potential range of Te, which serves as a protective atmosphere.…”

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confidence: 90%

“…In experiments, antisite defects of Mn Bi and Bi Mn , even inclusions of MnTe and Bi 2 Te 3 , were observed in MnBi 2 Te 4 after the annealing process. − The inclusions of MnTe and Bi 2 Te 3 can be considered as the aggregation of Mn Bi in the Bi layer and Bi Mn in the Mn layer, respectively. Therefore, prolonged annealing is not sufficient to eliminate all Mn Bi and Bi Mn defects for the perfect MnBi 2 Te 4 , which is supported by our finding of the hindrance of Mn-Bi pair exchange when MnBi 2 Te 4 has a dilute concentration of Mn Bi and Bi Mn .…”

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confidence: 99%

“…All exchanged Mn-Bi pairs tend to aggregate together, in agreement with the experimental observations that Mn Bi defects can form a chain or a large spot. 17,21,22 From the energy profile, the reaction energy of Mn-Bi pair exchange is exothermic throughout the process, indicating that the phase transition from the MnTe/Bi 2 Te 3 to the MnBi 2 Te 4 monolayer is thermodynamically favorable. However, from a kinetic point of view, the Mn-Bi pair exchange cannot take place in the perfect lattice.…”

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confidence: 99%

“…The antisite defects Mn Bi and Bi Mn have been identified experimentally and theoretically as the dominant defects in MnBi 2 Te 4 . − The concentration of Mn Bi defects in MnBi 2 Te 4 has been measured in the range of 5–40%, and the MnTe and Bi 2 Te 3 phases have always been observed in the synthesized MnBi 2 Te 4 . − Furthermore, the Mn Bi and Bi Mn defects always appear together as Mn-Bi site mixing, while the amounts of Mn Bi and Bi Mn are equal due to the preservation of the chemical stoichiometry of MnBi 2 Te 4 . Prolonged annealing as a post-treatment is widely used to improve the crystal quality by reducing Mn Bi and Bi Mn defects through the intralayer exchange of Mn-Bi.…”

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Irremovable Mn-Bi Site Mixing in MnBi₂Te₄

Ruan

Tang

et al. 2023

Nano Lett.

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MnBi2Te4, an antiferromagnetic topological insulator, was theoretically predicted to have a gapped surface state on its (111) surface. However, a much smaller gapped or even gapless surface state has been observed experimentally, which is thought to be caused by the defects in MnBi2Te4. Here, we have theoretically identified the antisite MnBi and BiMn as dominant defects and revealed their evolution during the phase transition from MnTe/Bi2Te3 to MnBi2Te4. We found that the complete elimination of MnBi and BiMn defects in MnBi2Te4 by simple annealing is almost impossible due to the high migration barrier in kinetics. Moreover, the gap of the Dirac point-related bands in a MnBi2Te4 monolayer would be eliminated with an increasing concentration of MnBi and BiMn defects, which could explain the experimentally unobserved large-gap surface state in MnBi2Te4. Our results provide an insight into the theoretical understanding of the quality and the experimentally measured topological properties of the synthesized MnBi2Te4.

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Irremovable Mn-Bi Site Mixing in MnBi₂Te₄

Ruan

Tang

et al. 2023

Nano Lett.

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“…167 Single crystals of other compositions such as Sb 2 Te 3 and Bi 2 TeI have also been grown. 168,169 Apart from these, vapor phase techniques such as physical vapor transport (sublimation of the solid material followed by condensation) 170−172 or chemical vapor transport (involving chemical reactions between the starting materials and the transport agent) 173,174 have also been employed to produce bulk crystals of topological materials. For example, Atuchin et al showed the growth of Bi 2 Te 3 microcrystals with dimensions of approximately 100 μm by physical vapor transport.…”

Section: Synthesis Methods Of Topological Insulatorsmentioning

confidence: 99%

Topological Insulator Metamaterials

et al. 2023

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In recent years, this approach has been extended to the realm of topological materials, providing a new avenue to access nontrivial features of their electronic band structure. In this review, we survey various topological material classes from a photonics standpoint, including crystal growth and lithographic structuring methods. We discuss how exotic electronic features such as spin-selective Dirac plasmon polaritons in topological insulators or hyperbolic plasmon polaritons in Weyl semimetals may give rise to unconventional magneto-optic, nonlinear, and circular photogalvanic effects in metamaterials across the visible to infrared spectrum. Finally, we dwell on how these effects may be dynamically controlled by applying external perturbations in the form of electric and magnetic fields or ultrafast optical pulses. Through these examples and future perspectives, we argue that topological insulator, semimetal and superconductor metamaterials are unique systems to bridge the missing links between nanophotonic, electronic, and spintronic technologies.

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