Growth by a vapour–liquid–solid mechanism: a new approach for silicon carbide epitaxy

Ferro, Gabriel; Jacquier, Christophe

doi:10.1039/b316410c

Cited by 58 publications

(64 citation statements)

References 48 publications

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“…This is not the case in this study. Second, if one compares our results with those obtained by VLS in Al-Si solutions, where homoepitaxial layers were grown on an identically off-axis-oriented 4H-SiC substrate at temperatures as low as 1100°C, [18] it is clear that too low a temperature is not the reason for the appearance of 3C-SiC in Ge-based solutions, since we performed reactions at temperatures 200°C higher than in Al-based melts. Third, no spiral growth was observed on any sample.…”

Section: Discussionmentioning

confidence: 93%

“…Strangely, the morphology does not look like that usually obtained on 4H-SiC homoepitaxial layers grown from Si-Ge [20] or even Al-Si melts. [18] MicroRaman spectroscopy was used to identify the polytype of the grown layer. As can be seen in Figure 3, the peak at 796 cm -1 is more intense when the laser is focused on the layer than on the substrate, clear evidence that the layer is composed of 3C-SiC.…”

Section: Resultsmentioning

confidence: 99%

“…A pre-growth surface preparation of each seed was performed as described in a previous report [18]. After that, graphite glue was used to fix the seed at the centre of a graphite crucible, which was affixed on top of the susceptor (see Fig.…”

Section: Methodsmentioning

confidence: 99%

“…[18,19] It gave very good results in terms of crystalline quality, temperature reduction (down to 1000°C), and Al incorporation in the layers (up to 1 × 10 21 atoms cm -3 ). If one wants to grow non-intentionally doped SiC layers at a low temperature, isoelectronic elements, such as those in column IV B of the periodic table, i.e., Ge, Sn, or Pb, should be used to replace Al.…”

Section: Introductionmentioning

confidence: 93%

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A Vapor–Liquid–Solid Mechanism for Growing 3C‐SiC Single‐Domain Layers on 6H‐SiC(0001)

Soueidan

Ferro

2006

Adv Funct Materials

100

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Growing device‐quality 3C‐SiC monocrystalline material is still an issue despite two decades of work dedicated to the subject. Using silicon as the substrate generates too many defects in the layers, owing to lattice mismatch, while it is very difficult to control the initial nucleation on an α‐SiC substrate so that 60° rotated domains are randomly formed. Herein, the elaboration of mono‐orientated 3C‐SiC layers on a 6H‐SiC(0001) on‐axis, Si face substrate using a vapor–liquid–solid mechanism is reported. This non‐conventional approach for growing monocrystalline layers involves feeding a Ge–Si melt by a propane flux at a temperature ranging from 1250 to 1550 °C. We show that, by using this technique, the 3C‐SiC material is almost always obtained on an hexagonal substrate, even if the crystal seed is oriented 8° off‐axis. Using on‐axis 6H‐SiC seeds and optimal growth conditions results in the reproducible deposition of single‐domain 3C‐SiC layers. A mechanism is proposed to clarify some aspects of this process.

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Section: Discussionmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 93%

See 2 more Smart Citations

A Vapor–Liquid–Solid Mechanism for Growing 3C‐SiC Single‐Domain Layers on 6H‐SiC(0001)

Soueidan

Ferro

2006

Adv Funct Materials

100

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“…The carbon transport is driven by diffusion, provoked by a C activity gradient from the VL interface to the LS interface. The growth rates usually obtained are a few µm/h [17]. In our case, the very high growth rate obtained could be attributed to a different carbon transport regime.…”

Section: Study Of Epitaxial Growthmentioning

confidence: 64%

Experimental investigation of different configurations for the seeded growth of SiC crystals via a VLS mechanism

Boutarek¹,

Bonda

Chaussende

et al. 2008

Cryst. Res. Technol.

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The growth of SiC crystals or epilayers from the liquid phase has already been reported for many years. Even if the resulting material can be of very high structural quality and the possibility to close micropipes was demonstrated, handling the liquid phase still is a challenge. Moreover, it is highly difficult to stabilize the C dissolution front and then to stabilize the growth front over a long growth time. Based on the Vapour-LiquidSolid (VLS) mechanism, we present a new configuration for the growth of SiC single crystal which should allow first to simplify the liquid handling at high temperature and second to precisely control the crystal growth front. The process consists in a modified top and bottom seeded solution growth method, in which the liquid is held under electromagnetic levitation and fed from the gas phase. 3C-SiC crystals exhibiting wellfaceted morphology were successfully obtained at 1100-1200°C with exceptional growth rates, varying from 1 to 1.5 mm/h in Ti-Si melt. It was shown that the nucleation density decreases simultaneously with increasing propane partial pressure. At 1200-1400°C, thick homoepitaxial 6H-SiC layers were successfully obtained in Co-Si and Ti-Si melts, with growth rate up to 200 µm/h. Large terraces with smooth surfaces are observed suggesting a layer by layer growth mode, and the influence of the system pressure was demonstrated. It was shown that the terrace size decrease simultaneously with increasing propane partial pressure which suggests the beginning of a two dimensional to three dimensional growth mode transition.

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Influence of Ga doping on the microstructure of 3C‐SiC layers grown on 4H‐SiC substrates by VLS mechanism

Marinova

Mantzari

Andreadou

et al. 2012

Phys. Status Solidi C

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This work focuses on the Transmission Electron Microscopy investigation of p‐type doped 3C‐SiC layers grown by Vapor‐Liquid‐Solid mechanism using Si‐Ga melts on 4H‐SiC substrates. Ga concentration strongly influences the appearance of defects in the grown layers. Ga inclusions are observed only in the layer grown at the highest temperature and lowest Ga content in the melt. At the highest concentration of Ga in the melt main defects are dislocations forming periodic bands along 〈$ 1\bar10 $〉 and 〈$ \bar211 $〉 directions. The most appropriate conditions (in terms of defect density) for VLS growth using SiGa melts, as defined from the current study, should be growth in Si25Ga75 alloy at T = 1200 ºC. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth by a vapour–liquid–solid mechanism: a new approach for silicon carbide epitaxy

Cited by 58 publications

References 48 publications

A Vapor–Liquid–Solid Mechanism for Growing 3C‐SiC Single‐Domain Layers on 6H‐SiC(0001)

A Vapor–Liquid–Solid Mechanism for Growing 3C‐SiC Single‐Domain Layers on 6H‐SiC(0001)

Experimental investigation of different configurations for the seeded growth of SiC crystals via a VLS mechanism

Influence of Ga doping on the microstructure of 3C‐SiC layers grown on 4H‐SiC substrates by VLS mechanism

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