Growth behavior of artificial hexagonal GdMnO3 thin films

Spin exchange interactions in hexagonal manganites RMnO3 (R = Tb, Dy, Ho, Er) epitaxial thin films

“…Thus, as R changes from Er to Tb, the lattice mismatch would vary systematically; therefore, the stress in the thin films would also vary systematically. Earlier studies 21,25 did indicate that the stress in the thin films varies systematically with R ionic radius. Taking into account the R dependence of the stress in the thin films, we then could understand the unusual R dependent behavior of J 1 .…”

Multiferroic RMnO3 thin films

“…However, the corresponding o-RMnO 3 phases have also been obtained by exploiting epitaxial strain [25,39]. Similarly, RMnO 3 with large R ions (R = La, Nd, Sm, Eu, Gd, Tb, and Dy) are orthorhombic, and some of them, lying closer to the verge of stability of the o-RMnO 3 /h-RMnO 3 phase, such as DyMnO 3 , TbMnO 3 or GdMnO 3 , have also been stabilized in thin film as an h-RMnO 3 phase [40][41][42].…”

Role of structural defects in the unipolar resistive switching characteristics of Pt∕NiO∕Pt structures

“…The -scan measurements around the Al 2 O 3 ͓1014͔ peaks ͑data not shown͒ confirmed the epitaxial growth of Pt͓110͔ ʈ Al 2 O 3 ͓1010͔ structure, as reported previously. 11 The XRD analyses of NiO / Pt/ TiO x / SiO 2 / Si thin films ͑TiO x layers inserted as adhesion layers͒ revealed that the in-plane crystalline axes of the NiO and Pt grains were randomly distributed and contained large-angle grain boundaries. Hereafter, the Pt/ NiO / Pt/ Al 2 O 3 and Pt/ NiO / Pt/ TiO x / SiO 2 / Si structures will be referred to as Pt/epi-NiO / Pt and Pt/poly-NiO / Pt, respectively.…”