Growth and vacuum post-annealing effect on the structural, electrical and optical properties of Sn-doped In2O3 thin films

Vilca-Huayhua, C.A.; Paz-Corrales, K. J.; Aragón, F.F.H.; Mathpal, Mohan Chandra; Villegas‐Lelovsky, L.; Coaquira, J. A. H.; Pacheco‐Salazar, D. G.

doi:10.1016/j.tsf.2020.138207

Cited by 11 publications

(4 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ZnO films annealed at different temperatures show n-type charge and the results are also shown in figure 10. The improvement in the electrical properties with the annealing temperature is related to the crystal improvement (annihilation of low formation energy defects and strained states) provoked by the annealing process, as was discussedabove, and its good agreement with the literature [15,63]. The suggested crystal defects annihilated at the different annealing temperatures based on the report [10] are also shown in figure 10.…”

Section: Electrical Characterizationsupporting

confidence: 64%

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Paz-Corrales¹,

Vilca-Huayhua²,

Aragón³

et al. 2022

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

The control of native defects in the ZnO material is strongly important for a wide range of technological applications. In this paper, native defects are tuned via the post-thermal treatment of ZnO films in a high vacuum atmosphere. The microstructure of the as-grown ZnO film shows columnar growth and strongly polar-oriented grains along the c-plane (002). Also, the obtained results indicate that the as-grown film contains a high amount of intrinsic defects and strong lattice distortions. After the thermal annealing, the ZnO films display significant structural changes, which are reflected in their electrical, vibrational, and optical properties. Our findings suggest that these changes were attributed to the selective cleanup effect of the native defects and the partial deoxidation process mainly on the exposed particle surface (at high temperatures) tuned up by the thermal annealing temperature. According to DFT calculations, oxygen vacancies (VO) show lower energy, followed by zinc vacancies (Oi) and oxygen interstitials (VZn) indicating that VO defect is the most stable in ZnO. That sequence of stability could suggest the sequence of the annihilation of those defects, which is in line with our experimental findings.

show abstract

Section: Electrical Characterizationsupporting

confidence: 64%

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Paz-Corrales¹,

Vilca-Huayhua²,

Aragón³

et al. 2022

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The results of bandgap calculations of the SnO 2 film are shown in Table 1. The optical bandgap of the SnO 2 films is greater than the fundamental E g = 3.6 eV (Table 1) [30][31][32]. This broadening is explained by the Burstein-Moss effect [33].…”

Section: Influence Of the Chemical Parameters Of Film-forming Solutio...mentioning

confidence: 99%

The Effect of pH Solution in the Sol–Gel Process on the Structure and Properties of Thin SnO2 Films

et al. 2022

View full text Add to dashboard Cite

The synthesis of surface-active structures is important for creating many applications. The structural formation of SnO2 thin films in the range from 1.4 to 1.53 pH is studied in this work. This process occurs on the surface of the sample in the range of 1.4 to 1.49 and in the volume in the range of 1.51 to 1.53. SnO2 is formed after annealing at 400 ∘C, according to XRD. Doping NH4OH to solution stimulates particle coagulation and gel formation. All of these have an impact on the transparency of samples investigated by spectrophotometric methods. By increasing the pH, the resistance raises at room temperature. The Eg calculation along the fundamental absorption edge shows that it is greater than 3.6 eV’ for SnO2 films. According to the Burstein–Moss effect, a change of the bandgap is related to the increased concentration of the free charge carriers. Elemental analysis has shown that chlorine ions are considered to be additional sources of charge carriers. The value pH = 1.49 is critical since there is a drastic change in the structure of the samples, the decrease in transparency is replaced by its increase, and the energy of activation of impurity levels is changed.

show abstract

“…In 2 O 3 is an n-type semiconductor. Its band gap is 3.5-3.7 eV, and it is widely used in transparent conducting electrodes, solar cells, displays, and photoelectric sensors [9,10].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Effect of Copper Doping on the Optoelectronic Properties of Indium Oxide Thin Films and the Thermoelectric Properties of an In2O3/Pt Thermocouple

Liu,

Lin,

Huang

et al. 2024

Crystals

View full text Add to dashboard Cite

The detection and real-time monitoring of temperature parameters are important, and indium oxide-based thin film thermocouples can be integrated on the surface of heaters because they operate normally under harsh conditions and provide accurate online temperature monitoring. The higher stability and appropriate optical and electrical properties of In2O3 make it very suitable as an electrode material for thermocouple sensors. This work demonstrates that copper doping can alter the optical and electrical properties of In2O3 films and regulate the output performance of thermocouples. Copper-doped In2O3 thin films were prepared using the magnetron co-sputtering method. The doping concentration of Cu was controlled using direct current (DC) power. An In2O3/Pt thermocouple sensor was prepared, and the optoelectronic and thermocouple properties were adjusted by changing the copper doping content. The thickness valve of the thin film sample was 300 nm. The results of the X-ray diffraction suggested that the structure of the doped In2O3 thin films was cubic. The results of the energy-dispersive X-ray analysis revealed that Cu was doped into the In2O3 thin films. All deposited films were n-type semiconductor materials according to Hall effect testing. The 4.09 at% Cu-doped thin films possessed the highest resistivity (30.2 × 10−3 Ω·cm), a larger carrier concentration (3.72 × 1020 cm−3), and the lowest carrier mobility (0.56 cm2V−1s−1). The optical band gap decreased from 3.76 to 2.71 eV with an increase in the doping concentration, and the transmittance of the film significantly reduced. When the DC power was increased, the variation range of Seebeck coefficient for the In2O3/Pt thermocouple was 152.1–170.5 μV/°C, and the range of thermal output value was 91.4–102.4 mV.

show abstract

Growth and vacuum post-annealing effect on the structural, electrical and optical properties of Sn-doped In2O3 thin films

Cited by 11 publications

References 25 publications

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

Tuning intrinsic defects in ZnO films by controlling the vacuum annealing temperature: an experimental and theoretical approach

The Effect of pH Solution in the Sol–Gel Process on the Structure and Properties of Thin SnO2 Films

Analysis of the Effect of Copper Doping on the Optoelectronic Properties of Indium Oxide Thin Films and the Thermoelectric Properties of an In2O3/Pt Thermocouple

Contact Info

Product

Resources

About