Growth and superconductivity of Bi2.1Sr1.9Ca1.0(Cu1−yFey)2Ox single crystal

Gu, G. D.; Takamuku, K.; Koshizuka, N.; Tanaka, Shōji

doi:10.1016/0022-0248(94)90986-5

Cited by 34 publications

(13 citation statements)

References 16 publications

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“…High-quality bulk Bi 2 Se 3 and Bi 2 Te 3 crystals were prepared as described elsewhere 41 . In addition, optimally doped Bi 2 Sr 2 CaCu 2 O 8 + δ (Bi-2212) crystals (T c ≈85 K) were grown by the floating-zone method 42 . Bi-2212/Bi 2 Se 3 and Bi-2212/Bi 2 Te 3 junctions were fabricated by using these crystals as the starting materials.…”

Section: Methodsmentioning

confidence: 99%

Proximity-induced high-temperature superconductivity in the topological insulators Bi2Se3 and Bi2Te3

et al. 2012

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Interest in the superconducting proximity effect has been reinvigorated recently by novel optoelectronic applications as well as by the possible emergence of the elusive majorana fermion at the interface between topological insulators and superconductors. Here we produce high-temperature superconductivity in Bi 2 se 3 and Bi 2 Te 3 via proximity to Bi 2 sr 2 CaCu 2 o 8 + δ , to access higher temperature and energy scales for this phenomenon. This was achieved by a new mechanical bonding technique that we developed, enabling the fabrication of highquality junctions between materials, unobtainable by conventional approaches. We observe proximity-induced superconductivity in Bi 2 se 3 and Bi 2 Te 3 persisting up to at least 80 K-a temperature an order of magnitude higher than any previous observations. moreover, the induced superconducting gap in our devices reaches values of 10 mV, significantly enhancing the relevant energy scales. our results open new directions for fundamental studies in condensed matter physics and enable a wide range of applications in spintronics and quantum computing.

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Section: Methodsmentioning

confidence: 99%

Proximity-induced high-temperature superconductivity in the topological insulators Bi2Se3 and Bi2Te3

et al. 2012

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“…32 The BSCCO crystals were cleaved in situ under ultra-high vacuum, and high quality topological insulator Bi 2 Se 3 thin films were then grown by the molecular beam epitaxy (MBE) on top of freshly cleaved surface of BSCCO. The MBE growth utilized thermal evaporation from high purity elemental Knudsen cells under selenium rich conditions.…”

Section: Methodsmentioning

confidence: 99%

Fermi-level electronic structure of a topological-insulator/cuprate-superconductor based heterostructure in the superconducting proximity effect regime

Liu

Richardella

et al. 2014

Phys. Rev. B

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We probe the near Fermi level electronic structure of tunable topological insulator (Bi2Se3)-cuprate superconductor Bi2Sr2CaCu2O 8+δ (Tc ≃ 91 K) heterostructures in their proximity induced superconductivity regime. Our careful momentum space imaging provides clear evidence for a twophase coexistence and a striking lack of any strong d-wave proximity effect expected in this system. Our Fermi surface imaging data identifies key contributors in reducing the proximity-induced gap below the 5 meV or to a lower energy range (≪ ∆BSCCO). These results correlate with our observation of momentum space separation between the Bi2Se3 and Bi2Sr2CaCu2O 8+δ Fermi surface topologies and mismatch of lattice symmetries in addition to the presence of a small coherence length. These studies not only provide critical momentum space insights into the Bi2Se3/Bi2Sr2CaCu2O 8+δ heterostructures, but also set an upper bound on the proximity induced gap for realizing much sought out Majorana fermion condition in this system.

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“…The simplicity of the fabrication method, which does not require expensive facilities, and the resulting devices, which can operate at temperatures of liquid nitrogen, make this approach technologically practical and also greatly expand the range of possible experiments in the field of high-T c superconductivity. The device fabrication is achieved using Bi-2212 crystals grown by the floating-zone method [31]. The Bi-2212 is cleaved in a nitrogen-purged dry box with adhesive tape producing atomically flat surfaces over large areas.…”

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confidence: 99%

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

et al. 2012

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We report the demonstration of hybrid high-T c -superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T c -superconductor-semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi 2 Sr 2 CaCu 2 O 8þ combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a Superconductors enable the implementation of fast ultrasensitive detectors [1,2] and large-scale quantumcomputation technology [3,4]. These materials pose major scientific and technological challenges, however. A potential alternative avenue may be provided by hybrid semiconductor-superconductor devices, which have been attracting growing attention lately as they combine the controllability of semiconductor structures with the macroscopic quantum states of superconductors [5,6]. The interaction of light with semiconductor-superconductor structures has recently emerged as a new interdisciplinary field of superconducting optoelectronics, with demonstrations of light emission from hybrid light-emitting diodes [7,8] enhanced by the superconducting state [9,10], and various proposals for novel lasers [11] and quantum light sources [12,13]. These hybrid devices have also proven useful in nonlinear electronics [14,15] and infrared detection [16], taking advantage of the relatively small size of the superconducting gap in the tunneling spectrum [17]. All previously studied semiconductor-superconductor devices were based on conventional low-criticaltemperature (low-T c ) superconductors, requiring cooling to extremely low temperatures. Moreover, the small superconducting gaps of these materials limit the energy scales over which they can be employed. A high operating temperature and large d-wave gaps can be obtained by incorporating unconventional high-T c superconductors [18,19] that exhibit a variety of novel phenomena and provide a more practical alternative for device implementation. Furthermore, by combining high-T c materials with semiconductors, one could take advantage of mature semiconductor technology to probe the unconventional nature of high-T c superconductors [20] in hybrid tunneling junctions.Tunneling spectroscopy is among the most widely used techniques for the study of novel materials and new phenomena in condensed matter physics [21]. Various effects have been observed with tunneling spectroscopy such as weak localization [22], superconducting-gap dependence on a magnetic field [23], bound states and broken symmetries in high-T c superconductors [24], as well as studies of the pseudogap, preformation of Cooper pairs [25], and electron-hole asymmetry [26]. These experiments usually require sophisticated and expensive scanning-tunneling spectroscopy equipment. A simple method of constructing high

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Growth and superconductivity of Bi2.1Sr1.9Ca1.0(Cu1−yFey)2Ox single crystal

Cited by 34 publications

References 16 publications

Proximity-induced high-temperature superconductivity in the topological insulators Bi2Se3 and Bi2Te3

Proximity-induced high-temperature superconductivity in the topological insulators Bi2Se3 and Bi2Te3

Fermi-level electronic structure of a topological-insulator/cuprate-superconductor based heterostructure in the superconducting proximity effect regime

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

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