2019
DOI: 10.1016/j.matpr.2019.03.025
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Growth and study of tin sulfide nanocrystals by precipitation technique using triethylamine

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Cited by 7 publications
(3 citation statements)
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“…Meanwhile, the reduction (quenching) of the peak in the samples Cu(0) and Cu(1) means the reduction of recombination . Since the E g of P3HT:PCBM is ∼1.80 eV, the peak at 690 nm indicates the transition from band to band P3HT:PCBM . The recombination in the range of 400–600 nm is related to the recombination in the energy ranges less than E g and is done through the transfer between the conduction band and the trap level or from the trap level to the valance band.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Meanwhile, the reduction (quenching) of the peak in the samples Cu(0) and Cu(1) means the reduction of recombination . Since the E g of P3HT:PCBM is ∼1.80 eV, the peak at 690 nm indicates the transition from band to band P3HT:PCBM . The recombination in the range of 400–600 nm is related to the recombination in the energy ranges less than E g and is done through the transfer between the conduction band and the trap level or from the trap level to the valance band.…”
Section: Resultsmentioning
confidence: 99%
“…33 Since the E g of P3HT:PCBM is ∼1.80 eV, the peak at 690 nm indicates the transition from band to band P3HT:PCBM. 34 The recombination in the range of 400−600 nm is related to the recombination in the energy ranges less than E g and is done through the transfer between the conduction band and the trap level or from the trap level to the valance band. According to the PL spectra, the red shift by the addition of Cu concentration(s) may be due to the indirect recombination of electrons moving from the trap level formed by Cu atoms to holes in the valence band.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Studies have already been conducted to determine the levels of intrinsic/extrinsic defects in SnS films using PL measurements. [29][30][31][32][33][34] However, very few studies have been conducted on the p-n interface in an SnS film. 9) This knowledge is crucial for improving the device performance because carriers originate from the defects around the p-n interface.…”
Section: Introductionmentioning
confidence: 99%