Growth and study of Tb3+ doped Nb2O5 thin films by radiofrequency magnetron sputtering: Photoluminescence properties

Horcholle, Bryan; Labbé, Christophe; Portier, X.; Marie, Philippe; Frilay, Cédric; Yuan, Weifeng; Jadwisienczak, Wojciech M.; Ingram, David C.; Grygiel, C.; Cardin, Julien

doi:10.1016/j.apsusc.2022.153711

Cited by 7 publications

(2 citation statements)

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nb 2 O 5 /SiO 2 bilayers are used for the Bragg mirrors, with N P Nb 2 O 5 /SiO 2 periods on top, a SiO 2 cavity in the middle, and an Ag back mirror. At λ = 624 nm the refractive indices are n Nb2O5 = 2.325 [132],n SiO2 = 1.457 [133], n Ag = 0.0581 + i4.212 [134], n SLG = 2.787 + i1.443 [135,136], n hBN = 2.12 [137], n WS2 = 5.38 + i0.382 [138]. The layer thicknesses are d Nb2O5 = 67 nm, d SiO2 = 107 nm and d cav = 191 nm, while 1L-WS 2 /hBN(3 nm)/SLG is placed in the middle of the SiO 2 cavity layer.…”

Section: Resultsmentioning

confidence: 99%

Monolayer WS₂ electro- and photo-luminescence enhancement by TFSI treatment

Cadore,

Rosa,

Paradisanos

et al. 2024

2D Mater.

View full text Add to dashboard Cite

Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diodes (LEDs) is that electroluminescence (EL) emission can be tuned across that of different exciton complexes (e.g. biexcitons, trions, quintons) by controlling the charge density. However, these devices have an EL quantumefficiency as low as~10−4%. Here, we show that the superacid bis-(triuoromethane)sulfonimide (TFSI) treatment of monolayer WS2-LEDs boosts EL quantum efficiency by over one order of magnitude at room temperature. Non-treated devices emit light mainly from negatively charged excitons, while the emission in treated ones predominantly involves radiative recombination of neutral excitons. This paves the way to tunable and efficient LMH-LEDs.

show abstract

Section: Resultsmentioning

confidence: 99%

Monolayer WS₂ electro- and photo-luminescence enhancement by TFSI treatment

Cadore,

Rosa,

Paradisanos

et al. 2024

2D Mater.

View full text Add to dashboard Cite

show abstract

“…Previous studies have indicated terbium (Tb) as a specific RE ion capable of emitting light at wavelengths of 490, 550, 580, and 620 nm due to the 5 D 4 -7 F J ( J = 6, 5, 4, 3) transitions. [11][12][13][14][15][16][17] Recently, we successfully grew Tb-doped Ga 2 O 3 films on insulating sapphire substrates using pulsed laser deposition (PLD). [18] Our investigation revealed intense emissions originating from 5 D 4 -7 F J ( J = 6, 5, 4, 3) transitions, which were prominently observed at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films

Guo,

Koga,

Chen

et al. 2024

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Terbium (Tb) doped Ga2O3 films were grown on Si substrates by pulsed laser deposition at a substrate temperature of 500°C.The electroluminescence (EL) peaks detected at 488, 543, 587, and 622 nm from the Tb doped Ga2O3/Si light emitting diodes (LEDs) correspond to the 5D4 ‐ 7F6, 5D4 ‐ 7F5, 5D4 ‐ 7F4, and 5D4 ‐ 7F3 transitions, respectively. The EL intensity initially increases with current up to 70 mA, followed by a decrease at higher currents. Notably, there is no discernible shift in the EL spectra peaks as the operating current varies from 5 to 90 mA. These findings imply that the Tb doped Ga2O3/Si LED, characterized by its remarkable wavelength stability, holds significant potential for advancing the development of highly efficient LEDs across diverse applications.This article is protected by copyright. All rights reserved.

show abstract

Investigation of optical transitions and electrical properties in LaVO3/SrTiO3 heterostructure

Cheikh,

David,

Lüders

et al. 2024

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Growth and study of Tb3+ doped Nb2O5 thin films by radiofrequency magnetron sputtering: Photoluminescence properties

Cited by 7 publications

References 54 publications

Monolayer WS₂ electro- and photo-luminescence enhancement by TFSI treatment

Monolayer WS₂ electro- and photo-luminescence enhancement by TFSI treatment

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films

Investigation of optical transitions and electrical properties in LaVO3/SrTiO3 heterostructure

Contact Info

Product

Resources

About

Growth and study of Tb3+ doped Nb2O5 thin films by radiofrequency magnetron sputtering: Photoluminescence properties

Cited by 7 publications

References 54 publications

Monolayer WS2 electro- and photo-luminescence enhancement by TFSI treatment

Monolayer WS2 electro- and photo-luminescence enhancement by TFSI treatment

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films

Investigation of optical transitions and electrical properties in LaVO3/SrTiO3 heterostructure

Contact Info

Product

Resources

About

Monolayer WS₂ electro- and photo-luminescence enhancement by TFSI treatment

Monolayer WS₂ electro- and photo-luminescence enhancement by TFSI treatment

Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga₂O₃ Films