Growth and structure of IrSi3 on Si(111)

Abstract

Molecular-beam epitaxy has been used to grow films that are almost entirely IrSi3 by codeposition of Si and Ir in a 3:1 ratio on Si(111) substrates. Bragg–Brentano and Seemann–Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 490 °C, the lowest temperature yet reported for growth of this iridium silicide phase. Above 580 °C this hexagonal phase becomes textured, with as many as seven preferred growth orientations on Si(111). Samples codeposited on Si(111) between 680 and 780 °C consist almost entirely of IrSi3 with its c axis perpendicular to the substrate’s surface. At higher substrate temperatures, near 830 °C growth of IrSi3 with its c axis in the plane of the substrate dominates. Atomic force microscopy shows that there is a difference in the surface morphology of the c-axis in-plane and perpendicular growth modes. Transmission electron microscope diffraction and in situ low-energy electron diffraction verify that both of these IrSi3 growth modes are epitaxially registered with their substrates. To check the quality of this epitaxy ion-beam channeling and x-ray rocking curves were used. The data from the epitaxial samples have channeling χmin ratios as low as 0.64. The x-ray rocking curves for these IrSi3 films are narrow, with full-width-at- half-maxima of as little as 0.07°.

Analysis of Surface Microstructures Formed on Ir Substrate under Different Bias Conditions by Microwave Plasma Chemical Vapor Deposition

“…For example, platinum silicide/p‐doped silicon diodes are often used in large‐scale focal plane arrays for detecting medium‐infrared wavelength light (3–5 μm). [ 25–28 ]…”

Design of Composites by Infiltration Process: A Case Study of Liquid Ir-Si Alloy/SiC Systems

“…Since the late 1970s, iridium silicides have become attractive for applications in electronic industry [1][2][3][4], and much research has been dedicated to thin film deposition, nucleation and growth of Ir-Si intermetallic phases formed and their stabilities have contributed to optimization of electronic devices [5,6]. Some of Ir-Si intermetallic compounds, such as IrSi, Ir 3 Si 5 [7] and IrSi 3 [4,7,8] are of interest for microelectronic or thermoelectric applications.…”

“…Concerning the solid-state measurements, several structural investigations of Ir-Si intermetallic phases by X-ray experiments have been carried out [1,5,[18][19][20][21][22][23]. Indeed, IrSi 3 [1,3,7,[19][20][21]24,25], IrSi [1,7,[18][19][20][24][25][26][27], IrSi 5 [20] Ir 3 Si 4 [1,2,20,25], Ir 4 Si 5 [1,20,25] Materials 2021, 14, 6024 2 of 18 Ir 3 Si 1.5 [20] and Ir 3 Si 5 [1,7,23,25] and their structures have been investigated. In the case of well-defined stoichiometry, the corresponding structural datasets differ within experimental errors.…”

Design of Composites by Infiltration Process: A Case Study of Liquid Ir-Si Alloy/SiC Systems

“…Since the late 1970s iridium silicides became attractive for applications in electronic industry [1][2][3][4] and until nowadays, lot of research dedicated to thin film deposition, nucleation and growth of Ir-Si intermetallic phases formed and their stabilities have contributed to optimisation of electronic devices [5,6]. Some of Ir-Si intermetallic compounds, such as , 3 5 [7] and 3 [4,7,8] are of interest for microelectronic or thermoelectric applications.…”

“…Concerning the solid-state measurements, several structural investigation of Ir-Si intermetallic phases by X-ray experiments have been carried out [1,5,[18][19][20][21][22][23]. Indeed, 3 [1,3,7,[19][20][21]24,25], [1,7,[18][19][20][24][25][26][27], 5 [20] 3 4 [1,2,20,25], 4 5 [ 1,20,25] 1.5 [20] 3 5 [1,7,23,25] and their structures have been investigated. In the case of well-defined stoichiometry, the corresponding structural datasets differ within experimental errors.…”