Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

Alhomoudi, Ibrahim A.

doi:10.1007/s11664-016-4748-2

Cited by 4 publications

(2 citation statements)

References 39 publications

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“…Diethylzinc (DEZn) and silane (SiH 4 ) were utilized as p-type and n-type dopants, respectively. A more detailed preparation process and process parameters can be observed in the literature [15]. Two types of solar-cell structures used in this work are shown in Figure 1.…”

Section: Methodsmentioning

confidence: 99%

Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

Gao

Yang

Zhang³

2020

Materials

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This paper studies the radiation resistance for GaInP/GaInAs/Ge triple-junction space solar cells with a GaInP back-surface field (BSF) in the GaInAs middle subcell compared with those with an AlGaAs BSF. The results show that the initial electrical performance is almost the same for both of them. However, the radiation resistance of the GaInP BSF cell was improved. After irradiation by 1 MeV electron beam with a cumulative dose of 1015 e/cm2, the Jsc declined by 4.73% and 6.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively; the efficiency degradation was 13.64% and 14.61% for the GaInP BSF cell and the AlGaAs BSF cell, respectively, leading to a reduced degradation level of 6%. The mechanism for GaInP BSF to improve the radiation resistance of GaInP/GaInAs/Ge triple-junction solar cells is also discussed in this work. Similar results were obtained when irradiation cumulative doses varied from 1 × 1014 e/cm2 to 1 × 1016 e/cm2.

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Section: Methodsmentioning

confidence: 99%

Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

Gao

Yang

Zhang³

2020

Materials

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“…SiGe heterostructures monolithically grown on Si are the ideal test bed for understanding alloying [8][9][10][11] and the interplay between elastic/plastic relaxation at the nanoscale [12][13][14][15][16][17][18][19][20][21][22] Their also being promising candidates for integrating optical communications into a CMOS platform, thanks to their optical properties potentially compatible with the C-band transmission window [23]. Ge wafers, on the other hand, are the substrates of choice for the epitaxial growth of high-efficiency multi-junction solar cells based on III-V semiconductors [24][25][26][27][28][29] and have also been shown to be suitable CMOS compatible templates for graphene overgrowth [30][31][32]. All these applications require a highlydemanding surface quality of the epi-ready Ge substrates.…”

Section: Introductionmentioning

confidence: 99%

Formation of extended thermal etch pits on annealed Ge wafers

Persichetti

Fanfoni

Seta

et al. 2018

Applied Surface Science

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An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-preparation recipes of the Ge surface. The density of the defects depends on the temperature reached, the number of annealing cycles performed and correlates to the surface-energy stability of the specific crystal orientation. We propose that the pits were formed by preferential desorption from the strained regions around dislocation pile-ups. Indeed, the morphology of the pits was the same as that observed for preferential chemical etching of dislocations while the spatial distribution of the pits was clearly non-Poissonian in line with mutual interactions between the core dislocations. * luca.persichetti@uniroma3.it I. INTRODUCTIONDespite recent advances in the van der Waals epitaxy of two-dimensional semiconductors [1-7], bulk group-IV still plays a leading role in current complementary-metal-oxide-semiconductor (CMOS) technology. Within group IV, non-siliconoriented research is mainly devoted to Ge. SiGe heterostructures monolithically grown on Si are the ideal test bed for understanding alloying [8][9][10][11] and the interplay between elastic/plastic relaxation at the nanoscale [12-22] Their also being promising candidates for integrating optical communications into a CMOS platform, thanks to their optical properties potentially compatible with the C-band transmission window [23]. Ge wafers, on the other hand, are the substrates of choice for the epitaxial growth of high-efficiency multi-junction solar cells based on III-V semiconductors [24][25][26][27][28][29] and have also been shown to be suitable CMOS compatible templates for graphene overgrowth [30][31][32]. All these applications require a highlydemanding surface quality of the epi-ready Ge substrates. Indeed, any deviation from a perfect surface will be a nucleation point for a defect or a cause of a non-uniform epi-stack. In particular, one of the main issues affecting the manufacturing of semiconductor wafers is the formation of extended secondary defects such as crystal-originated pits (COPs) and L-pits (also referred to as A-Swirls) resulting from the aggregation of intrinsic point defects [33]. While COPs are voids produced by the aggregation of vacancies, it is generally assumed that the formation of L-pits is related to dislocation loops either intrinsically formed during the wafer manufacturing [34,35] or by misfit strain in the case of SiGe heteroepitaxy [36]. In the former case,

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A robust global MPPT to mitigate partial shading of triple-junction solar cell-based system using manta ray foraging optimization algorithm

2020

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Growth and Strain Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell Structures

Cited by 4 publications

References 39 publications

Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell

Formation of extended thermal etch pits on annealed Ge wafers

A robust global MPPT to mitigate partial shading of triple-junction solar cell-based system using manta ray foraging optimization algorithm

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