Growth and spectroscopic properties of Nd3+: BaLaLiWO6 crystal

Growth and spectroscopic properties of Yb3+-doped BaLaLiWO6 crystal

“…The XRD pattern of Yb 3+ :BaLaLiWO6 crystal is shown in Fig. 2, which is in good accordance with the pattern of Nd 3+ :BaLaLiWO6 [27]. The concentration of Yb 3+ ions in the grown crystal was measured to be 4.52 wt%, i.e.…”

“…In addition, the La 3+ ions in the BaLaLiWO 6 crystal can be substituted by the active ions of Nd 3+ and Yb 3+ , it can be considered as a potential laser host material. The growth and spectral properties of Nd 3+ -doped BaLaLiWO 6 have been investigated [27]. The investigated result shows that BaLaLiWO 6 crystal is an excellent laser host material [10].…”

Modified Czochralski growth and characterization of Nd3+-doped CsLa(WO4)2 crystal

“…The peak stimulated emission cross-sections are 3.59 Â 10 À 20 and 17.94 Â 10 À 20 cm 2 at 1058 nm for p-and s-polarization, respectively. The value is smaller than that of Nd 3 þ :KGd(WO 4 ) 2 (32.3 Â 10 À 20 cm 2 for E:N m polarization) [35], but still relatively large among the tungstate laser gain media, such as, Nd 3 þ :NaLa(WO 4 ) 2 (5.6 Â 10 À 20 cm 2 for p-polarization) [1], Nd 3 þ :LiLa(WO 4 ) 2 (6.9 Â 10 À 20 cm 2 for p-polarization) [13], Nd 3þ :NaBi(WO 4 ) 2 (16.0 Â 10 À 20 cm 2 for p-polarization) [34], and Nd 3þ :BaLaLiWO 6 (4.0 Â 10 À 20 cm 2 ) [40]. The 4 F 3/2 -4 I 13/2 laser channel of Nd 3 þ ions provides a way of realizing solid-state infrared lasers emitting in the 1.3 mm range, and these laser sources have important applications in remote sensing, guided optical communications and soft human tissue applications.…”

Structure and spectral properties of Nd3+-doped KBaGd(MoO4)3 crystal with a disorder structure

“…With the development of the solid-state laser with diode laserpumped, research on more efficient Nd 3+ -doped crystal materials is gaining more interest. [1][2][3][4][5][6][7][8] Since the output wavelength of diode laser is increased at 0.2$0.3 nm C À1 with the operating temperature of the laser device, the temperature stability of the output wavelength of the diode-laser is needed to be crucially controlled. Therefore, the absorption band of laser crystals close to the laser output of AlGaAs diode-laser (lz808 nm) needs to have a large full-width at half-maximum (FWHM).…”