Growth and properties of the Cd1−xZnxS thin films for solar cell applications

Lee, Jaehyeong; Song, Wooseok; Yi, Junsin; Yang, Kea-Joon; Han, Weijian; Hwang, Junseok

doi:10.1016/s0040-6090(03)00526-1

Cited by 108 publications

(52 citation statements)

References 11 publications

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“…It can be seen that small grains are grouped to form by cauliflower-like clusters. According to Atomic Force Microscopy, the roughness of the film increases through annealing, for this reason the density of grain boundaries should be low (big grains) to reduce the recombination rate and improve the quality of the films and cell performance, which is favourable for solar cell applications as a rough surface will trap more light [18]. Table II shows Only a residual part of selenium (lower that 1%) remains after 10-minutes sulfurization.…”

Section: Resultsmentioning

confidence: 99%

Electrodeposition of CuGaSe2 and CuGaS2 thin films for photovoltaic applications

Ullah

Mollar

Marı́

2016

J Solid State Electrochem

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CuGaSe2 and CuGaS2 polycrystalline thin film absorbers were prepared by one-step electrodeposition from an aqueous electrolyte containing CuCl2, GaCl3, and H2SeO3. The pH of the solution was adjusted to 2.3 by adding HCl and KOH. Annealing improved crystallinity of CuGaSe2 and further annealing in sulfur atmosphere was required to obtain CuGaS2 layers. The morphology, topography, chemical composition and crystal structure of the deposited thin films were analysed by Scanning Electron Microscopy, Atomic Force Microscopy, Energy Dispersive Spectroscopy and X-Ray Diffraction, respectively. X-Ray diffraction showed that the as-deposited CuGaSe2 film exhibited poor crystallinity, but which improved dramatically when the layers were annealed in forming gas atmosphere for 40 min. Subsequent sulfurization of CuGaSe2 films was performed at 400 °C for 10 min in presence of molecular sulfur and under forming gas atmosphere.The effect of sulfurization was the conversion of CuGaSe2 into CuGaS2. The formation of CuGaS2 thin films was evidenced by the shift observed in the X-Ray diffraction pattern and by the blue shift of the optical band gap. The bandgap of CuGaSe2 was found to be 1.66 eV, while for CuGaS2 it raised up to 2.2 eV. A broad intermediate absorption band associated to Cr and centred at 1.63 eV was observed in Cr-doped CuGaS2 films.

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Section: Resultsmentioning

confidence: 99%

Electrodeposition of CuGaSe2 and CuGaS2 thin films for photovoltaic applications

Ullah

Mollar

Marı́

2016

J Solid State Electrochem

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“…Recently, various research groups around the world are working on the synthesis of nanocrystalline CdS thin films in different routes such as pulsed laser deposition (PLD), vacuum deposition, spray pyrolysis, chemical bath deposition (CBD) etc. Lee et al [9] prepared Cd 1-x Zn x S thin films by co-evaporation of CdS and ZnS powder and Zn incorporation in CdS nanoparticles were also reported by International Journal of Hybrid Information Technology Vol. 8, No.4 (2015) 50…”

Section: Introductionmentioning

confidence: 98%

Effect of Particle Size on Dielectric Properties of CdS Nanoparticles

Ghosh¹

2015

IJHIT

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“…Solid heteropolyacids have attracted much attention in organic synthesis owing to easy workup procedures, easy filtration, and minimization of cost and waste generation due to reuse and recycling of the catalysts. 16 Over the last decade, due to the unique properties of nano particles along with their novel properties and potential applications in different fields, [17][18][19][20][21] synthesis and characterization of catalysts with lower dimensions have became the most interesting topic of research. As the particle size decreases, the relative number of surface atoms increases, and thus activity increases.…”

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confidence: 99%