Growth and properties of single-phase γ-In2Se3 thin films on (111) Si substrate by AP-MOCVD using H2Se precursor

Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence

“…For PL spectra, the full width of the half maximum (FWHM) of the NBE line are 182, 96.5, 93.8, 87.3, and 89.4 meV, for the IS350, IS375, IS400, IS450 and IS500 ␥-In 2 Se 3 samples, respectively. The measured RT-NBE emissions at around 1.947 eV from the ␥-In 2 Se 3 films are reasonably consistent with the estimated values of previous reports, which were deduced from the low-temperature PL data by fitting to the Varshni's equation [13,14]. Our results thus indicate that epitaxial ␥-In 2 Se 3 films with strong RT-NBE emissions were grown by atmospheric MOCVD.…”

“…It was found that the emission at 2.145 eV becomes eminent and finally dominant while the intensities of the other three peaks decrease rapidly with increasing temperature. The three peaks located at 2.141, 2.133 and 2.114 eV became disappeared after the temperature was increased above 60 K. Therefore, the peak at 2.145 eV was attributed to free exciton emission and the other three peaks were attributed to bound excitons or defectrelated emissions [13][14][15]. Fig.…”

“…Lin). films on Si(1 1 1) or Si(1 0 0) substrates by MOCVD using H 2 Se and TMI precursors [13][14][15]. However, the as-grown ␥-In 2 Se 3 epitaxial thin films can emit photoluminescence (PL) only at low temperature, which limit a complete understanding of their properties.…”

Indium Selenides: Structural Characteristics, Synthesis and Their Thermoelectric Performances

“…Various methods have been applied for the fabrication of indium selenide thin films, such as thermal evaporation, flash evaporation, molecular beam deposition (MBE), metal‐organic chemical vapor deposition (MOCVD), chemical vapor transport, and electrostatic spray pyrolysis deposition . Among them, thermal and flash evaporations have been widely used for the fabrication of indium selenide thin films.…”

Structural and Optical Characteristics ofγ-In2Se3Nanorods Grown on Si Substrates

“…Due to many different crystalline phases existing in In 2 Se 3 , growth of high-quality In 2 Se 3 with a single phase is a challenging task. Several different methods have been demonstrated to grow In 2 Se 3 epilayers, such as evaporation [5,6], the Bridgman-Stockbarger Method [7,8], and metal-organic chemical vapor deposition (MOCVD) [9][10][11]. Recently, one-dimensional III-VI semiconductor nanostructures, such as nanowires and nanotubes, exhibited novel and device applicable physical properties, which can be used in a wide variety of applications in nanoelectronic and nanooptoelectronic devices [12][13][14][15][16][17].…”