Growth and properties of single crystals of the ternary CuIn5Se8 compound

Bodnar, I. V.; Bodnar, I. T.; Gremenok, V. F.; Kovalchuk, Alexandr; León, M.

doi:10.1016/j.jcrysgro.2006.05.054

Cited by 18 publications

(7 citation statements)

References 19 publications

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“…Furthermore, in experimental studies it was found that η is slightly larger than 1.000; i.e., c is longer than 2 a both for CIS and CuIn 5 Se 8 , and the value of η is quite similar for both compounds (see refs , , and and references therein). For CuIn 5 Se 8 we have computed a formation enthalpy of 7.20 eV (0.51 eV/atom), with respect to the mentioned elemental phases.…”

Section: Resultsmentioning

confidence: 96%

Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn₅Se₈

Kiss¹,

Gruhn²,

Roma

et al. 2013

J. Phys. Chem. C

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Due to its attractive optical, electrical, and chemical properties, the ternary CuInSe2 (CIS) chalcopyrite-type semiconductor is widely employed as an absorber layer in thin-film photovoltaic devices. Experimental studies have shown that close to the interface of CIS with the CdS buffer layer the former is Cu-depleted, corresponding most probably to an ordered vacancy compound (OVC), and hosts some Cd atoms by diffusion, which originate from the buffer layer. To gain new insights into the insertion of Cd into Cu-depleted CIS phases, we have performed density functional theory calculations, and we have investigated the atomic structure and energetics of neutral Cd impurities in the OVC CuIn5Se8. We found that Cd atoms prefer predominantly to sit on Cu sites or on Cu vacancy sites. Furthermore, our calculations show that the Cu vacancies and Cd atoms have high binding energy at least in some specific configurations. Hence, the insertion of Cd into the CIS materials might enhance the formation of Cu-poor phases.

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Section: Resultsmentioning

confidence: 96%

Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn₅Se₈

Kiss¹,

Gruhn²,

Roma

et al. 2013

J. Phys. Chem. C

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“…CuIn 5 Se 8 are ≈1.32 and ≈1.13 eV at room temperature, respectively. [23][24][25][29][30][31] By inferring the optical bandgap of the as-grown CIS nanoflakes to be at the same level, the photo-responsive wavelength of the as-grown CIS nanoflakes was larger than their intrinsic long wavelength edge. This may be because of the existence of defect states in the CIS nanoflakes.…”

Section: Wwwadvopticalmatdementioning

confidence: 99%

“…Since the successful exfoliation of graphene, 2D materials have attracted worldwide attention owing to their unique physical photodetectors with the merits of high photoresponsivity, high specific detectivity, and fast photoresponse time in visible region. [26][27][28] In the light of the bandgaps of the CIS system, [23][24][25][29][30][31] they are also suitable for the near-infrared detection. However, to the best of our knowledge, synthesis of layered CIS nanoflakes on various substrates has rarely been reported, which is crucial to explore the direct growth of layered CIS nanoflakes for future applications.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

Gan

Hao

Liu

et al. 2022

Advanced Optical Materials

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and chemical properties, including dangling-bond-free surface, atomic thickness, flexibility, high mobility, and tunable band gap. [1][2][3][4] These merits lead 2D materials to be expected to replace traditional photodetectors with the drawbacks of fragile quality, limited pixel size, and low-temperature operation in infrared region. [5][6][7] 2D layered materials have demonstrated attractive photoelectric properties, such as broadband detection, high photoresponsivity, high external quantum efficiency (EQE), high specific detectivity, and fast photoresponse, and thus could be promising candidates for future photodetectors in flexible electronics, biological imaging, and environmental monitoring. [8][9][10][11] However, the efficiency of photon trapping in 2D materials is relatively low. [12] Lots of efforts have been taken to improve the efficiency of photon trapping, such as constructing heterostructures with n-dimensional (n = 0, 1, 2) materials. [1] On the other hand, searching for new members of more photon-sensitive 2D materials is another effective way to improve the photodetector characteristics. [13][14][15] Initially, research was focused on single or binary elemental 2D materials, such as black phosphorus and transition metal dichalcogenides. Subsequently, ternary 2D materials have attracted increasing attention because of the flexibility to tune their composition and the emerging intriguing physical properties. [15][16][17] Devices based on ternary layered materials have exhibited outstanding photoelectric characteristics, which indicates that ternary 2D materials have promising applications in future photoelectric devices. [14,15] The copper-indium-selenium (CIS) system is composed of a series of typical ternary materials. The structure and physical properties of CIS can be tuned by changing the ratio of Cu/ In, and CIS materials are widely used as a light absorption layer in solar-energy applications. [18][19][20][21] Normally, CIS structures are n-type semiconductors with a direct band gap, except for CuInSe 2 which is a p-type semiconductor, and their Hall mobilities can reach 2.3 × 10 3 cm 2 V −1 s −1 . [22][23][24][25] CIS compounds usually have a chalcopyrite structure with different ordered vacancies. When the Cu/In ratio is between 1:5 and 1:9, the CIS system can contain layered structures. [17] Layered CIS nanoflakes such as CuIn 7 Se 11 can be exfoliated from the bulk single crystals, and they have been constructed into 2D semiconductors are promising for future photodetectors because of their dangling-bond-free surface, atomic thickness, tunable bandgap, high mobility, and flexible nature. However, the low light absorption is one of the main limits for the practical applications of 2D materials. Lots of efforts have been taken to optimize the light absorption, for example, constructing heterojunctions and exploring more photo-sensitive 2D materials. Here, the epitaxial growth of layered copper-indium-selenide (CIS) nanoflakes is realized by chemical vapor deposition. The CIS nanoflakes ar...

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“…4 представлена температурная зависимость ширины запрещенной зоны E g (T ) монокристалла MnAgIn 7 S 12 , полученная на основе экспериментальных данных по измерениям коэффициента пропускания в интервале температур 10−320 K точки. Видно, что указанная зависимость имеет вид, характерный для большинства полупроводниковых материалов, с понижением температуры E g возрастает [10][11][12].…”

Section: экспериментальные результатыunclassified

Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

Боднарь¹,

Чан²,

Павловский³

et al. 2019

Физика И Техника Полупроводников

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MnAgIn_7S_12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap E _ g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap E _ g increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.

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Growth and properties of single crystals of the ternary CuIn5Se8 compound

Cited by 18 publications

References 19 publications

Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn₅Se₈

Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn₅Se₈

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

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Growth and properties of single crystals of the ternary CuIn5Se8 compound

Cited by 18 publications

References 19 publications

Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn5Se8

Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn5Se8

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

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Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn₅Se₈

Theoretical Study on the Structure and Energetics of Cd Insertion and Cu Depletion of CuIn₅Se₈