2011
DOI: 10.1063/1.3610975
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Growth and properties of heavy fermion CeCu2Ge2 and CeFe2Ge2 thin films

Abstract: Epitaxial films of heavy fermion CeCu2Ge2 and CeFe2Ge2 are grown on DyScO3 and MgO substrates using molecular beam epitaxy. The growth begins via island nucleation leading to a granular morphology. The grains grow flat with c-axis orientation after nucleating, as indicated by in-situ reflection high energy electron diffraction (RHEED) and ex-situ analysis including atomic force microscopy (AFM) and x-ray diffraction (XRD). These single phase films show similar temperature dependent transport to single crystals… Show more

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Cited by 7 publications
(12 citation statements)
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“…1 we show DC resistivity data as a function of temperature of the film studied in this work. As demonstrated previously, transport measurements of the films find quantitative agreement with the temperature scales found in bulk single crystals [7]. A number of prominent features can be noted.…”
supporting
confidence: 67%
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“…1 we show DC resistivity data as a function of temperature of the film studied in this work. As demonstrated previously, transport measurements of the films find quantitative agreement with the temperature scales found in bulk single crystals [7]. A number of prominent features can be noted.…”
supporting
confidence: 67%
“…Due to its smaller ionic size, Si substitution can be seen as a equivalent to increasing pressure. Pure CeCu 2 Ge 2 (CCG) is a Kondo-lattice system that exhibits an unusual temperature dependence of the resistivity caused by crystal field splitting and magnetic interactions at low temperatures [5][6][7]. An upturn of the resistivity around 25 K indicates the increasing effect upon cooling of scattering of the conduction electrons off the local moments.…”
mentioning
confidence: 99%
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“…4(b). The overall scale of the mass is set by the measured plasma frequency and although it is possible that we have parameterized it inaccurately, the present value of the low temperature renormalized mass is consistent with heat capacity measurements and materials with similar specific heat coefficients [9,23].…”
mentioning
confidence: 68%
“…In this expression n is the index of refraction of the substrate, ∆L is a correction factor that accounts for thickness differences between the reference substrate and the sample substrate, d is the film thickness, and Z 0 is the impedance of free space (377 Ω). The films studied in this work were grown by molecular beam epitaxy to a thickness of 524Å using flux-matched codeposition on MgO substrates [23].…”
mentioning
confidence: 99%