Growth and photoluminescence of ZnO thin films on Si(111) by PLD in oxygen adequate ambient

Zhao, Jie; Hu, Lizhong; Wang, Zhaoyang; Jian-ming, Chen; Zhao, Jianjun; Fan, Zebin; Wu, Guiying

doi:10.1016/j.vacuum.2006.12.008

Cited by 10 publications

(8 citation statements)

References 21 publications

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“…Kumano et al 24) obtained a ratio as high as 60 even at room temperature. Our results compare well with those obtained by Zhao et al 25) on thin films prepared at 650 C by pulsed laser deposition and who reported an intensity ratio of 122 at 300 K. Umar et al 26) reported that the intensity of the UV emission was related to the crystal quality of the deposited materials and therefore a good crystal quality (fewer point defects and impurities, etc.) may enhance the intensity of the UV emission as compared to the green emission.…”

Section: Resultssupporting

confidence: 92%

Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method

Bousslama¹,

Elhouichet

Gelloz

et al. 2012

Jpn. J. Appl. Phys.

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ZnO nanoparticles were synthesized using sol-gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution TEM (HRTEM), Raman spectroscopy, and photoluminescence (PL). XRD analysis demonstrates that the nanoparticles have the hexagonal wurtzite structure and the particle size is increased with annealing temperature. The average size of the nanoparticles was determined by SEM as well as XRD data and found to be 50 nm after annealing at 800 C. A sharp, strong and dominant UV emission with a suppressed green emission has been observed at 300 and 10 K, indicating the good optical properties of ZnO nanoparticles. The 10 K UV band is dominated by a neutral-donor bound exciton, and the surface-related SX emission at 3.31 eV is evidenced. #

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Section: Resultssupporting

confidence: 92%

Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method

Bousslama¹,

Elhouichet

Gelloz

et al. 2012

Jpn. J. Appl. Phys.

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“…Zinc oxide is a representative semiconductor which presents high transparency, direct bandgap, large exciton energy, and low toxicity. In a practical point of view, a great advantage is that ZnO can be produced in thin film form by several methods as rf-sputtering [1], pulsedlaser deposition (PLD) [2], chemical vapour deposition (CVD) [3], molecular beam epitaxy (MBE) [4], and spraypyrolysis [5], which allows the fabrication of commercial electrical-electronic devices. As a semiconductor, the effect of photoconductivity is mainly explored using light sources in wavelengths which energies are higher than the bandgap and, for ZnO, it corresponds to the ultraviolet optical range (~3.3 eV).…”

Section: Introductionmentioning

confidence: 99%

“…However, the presence of defects in oxide semiconductors is strongly dependent on synthesis method. In the technological field of thin films, sophisticated techniques like MBE, PLD, or CVD [2][3][4] produce epitaxial films in appropriated substrates like sapphire with low defect levels. The low rate growth allows better crystalline conformation which can be evaluated by structural and electronic characterizations.…”

Section: Introductionmentioning

confidence: 99%

Atmosphere-Dependent Photoconductivity of ZnO in the Urbach Tail

Scolfaro

Onofre

Teodoro

et al. 2018

International Journal of Photoenergy

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Photoconductivity is a fundamental and highly applicable phenomenon for semiconductor oxide-based devices, and the presence of defects plays a significant role in this mechanism. Here, we present an investigation based on different atmospheres and light excitation (above and below bandgap) dependences of zinc oxide thin film grown by spray-pyrolysis. As-grown ZnO presents a representative Urbach tail associated to the presence of localized levels in the bandgap. Photoconductivity response and decay times are investigated for air and inert atmospheres as well as under vacuum conditions with significant features due to light excitation conditions. The observed characteristics are explained based on oxygen photodesorption when excitation is above bandgap while this process is suppressed when excitation is below bandgap.

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“…This shift means that the lattice constant c decreases with increasing the substrate temperature, which is considered to be related to the residual stress in the ZnO thin films. [24][25][26] The residual stress σ film in the ZnO thin films can be evaluated by the following relation using the calculated c value from the XRD data: [27] (1)…”

Section: Methodsmentioning

confidence: 99%

Effect of substrate temperature on residual stress of ZnO thin films prepared by ion beam deposition

Jeon

Kim

Jang

et al. 2012

Electron. Mater. Lett.

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We have investigated the effect of substrate temperature on micro-structural properties of ZnO thin films prepared by ion beam deposition technique. ZnO thin films were deposited on AlN-buffered Si (111) and sapphire (001) substrates at various substrate temperatures. The structural properties and surface morphologies were examined by high resolution X-ray diffraction (XRD) and field emission scanning electron microscopy, respectively. The RMS roughness was measured by atomic force microscopy. XRD measurements confirmed that the ZnO thin films were grown well on the AlN-buffered Si (111) and sapphire (001) substrates along the c-axis. Minimization of residual stress was carried out by tuning the substrate temperature. The structural properties were notably improved with increasing substrate temperature.

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Growth and photoluminescence of ZnO thin films on Si(111) by PLD in oxygen adequate ambient

Cited by 10 publications

References 21 publications

Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method

Structural and Luminescence Properties of Highly Crystalline ZnO Nanoparticles Prepared by Sol–Gel Method

Atmosphere-Dependent Photoconductivity of ZnO in the Urbach Tail

Effect of substrate temperature on residual stress of ZnO thin films prepared by ion beam deposition

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