Growth and optical properties of mercury thiogallate

Badikov, V. V.; Matveev, I. N.; Panyutin, Vladimir; Pshenichnikov, S M; Repyakhova, T M; Rychik, O V; Rozenson, A. E.; Trotsenko, N K; Ustinov, N. D.

doi:10.1070/qe1979v009n08abeh009420

Cited by 25 publications

(3 citation statements)

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“…Recently, the growth, optical and other properties of the AGGS crystal have been reported by Schunemann et al 7) Taking into account of its transmission range, AGGS could become an alternative to the widely used AgGaS 2 crystal for nonlinear optical laser device applications in the mid-infrared region due to its higher damage threshold. 8) It was shown 9) that the fabrication solution of A IV B 2 VI in the A I B III C 2 VI semiconductor is a potential method for producing high birefringence, longer-transmission range crystals. The defect tetrahedral mixed crystal AgGaGeS 4 (AgGaS 2 :GeS 2 !…”

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confidence: 99%

AgGaGeS₄Crystals for Nonlinear Laser Device Applications

Das

Ghosh

Gangopadhyay

et al. 2006

Jpn. J. Appl. Phys.

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confidence: 99%

AgGaGeS₄Crystals for Nonlinear Laser Device Applications

Das

Ghosh

Gangopadhyay

et al. 2006

Jpn. J. Appl. Phys.

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“…It was first synthesized in powder form by Hahn et al HGS crystals are characterized with high nonlinear susceptibility coefficients, wide transparency range (from 0.5 to 13 μm), and considerable birefringence . The large birefringence ensures phase matching in a wide frequency range. , HGS is considered to be very promising for operating in the mid-IR spectral range , because of their superior nonlinearity and damage threshold. It can be used for mid-IR parametric oscillator with Nd:YAG laser pumping.…”

Section: Introductionmentioning

confidence: 99%

“…3 The large birefringence ensures phase matching in a wide frequency range. 4,5 HGS is considered to be very promising for operating in the mid-IR spectral range 6,7 because of their superior nonlinearity and damage threshold. It can be used for mid-IR parametric oscillator with Nd:YAG laser pumping.…”

Section: Introductionmentioning

confidence: 99%

X-ray Photoelectron Spectrum and Electronic Properties of a Noncentrosymmetric Chalcopyrite Compound HgGa₂S₄: LDA, GGA, and EV-GGA

et al. 2009

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An all electron full potential linearized augmented plane wave method has been applied for a theoretical study of the band structure, density of states, and electron charge density of a noncentrosymmetric chalcopyrite compound HgGa(2)S(4) using three different approximations for the exchange correlation potential. Our calculations show that the valence band maximum (VBM) and conduction band minimum (CBM) are located at Gamma resulting in a direct energy gap of about 2.0, 2.2, and 2.8 eV for local density approximation (LDA), generalized gradient approximation (GGA), and Engel-Vosko (EVGGA) compared to the experimental value of 2.84 eV. We notice that EVGGA shows excellent agreement with the experimental data. This agreement is attributed to the fact that the Engel-Vosko GGA formalism optimizes the corresponding potential for band structure calculations. We make a detailed comparison of the density of states deduced from the X-ray photoelectron spectra with our calculations. We find that there is a strong covalent bond between the Hg and S atoms and Ga and S atoms. The Hg-Hg, Ga-Ga, and S-S bonds are found to be weaker than the Hg-S and Ga-S bonds showing that a covalent bond exists between Hg and S atoms and Ga and S atoms.

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