Growth and optical characterization of spin-coated As2S3 multilayer thin films

Santiago, J. J.; Sano, Megumi; Hamman, M.; Chen, N.

doi:10.1016/0040-6090(87)90023-x

Cited by 21 publications

(11 citation statements)

References 9 publications

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“…A different route was taken by Santiago et al who also dissolved chalcogenide glasses in n-butylamine, but then dried the resultant solutions to obtain the butyl ammonium salt as a powder which they subsequently dissolved in N,N-dimethylacetamide. The amide solution is less hygroscopic and can be used to spin-coat multiple layers [38].…”

Section: Solution Propertiesmentioning

confidence: 99%

A review on solution processing of chalcogenide glasses for optical components

Zha¹,

Waldmann²,

Arnold³

2013

Opt. Mater. Express

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Solution-processing offers a pathway to fabricate complex chalcogenide structures for electronic, imaging and photonic applications. More importantly, it has benefits in flexibility and integration as compared to conventional methods. This paper reviews the fundamental physics and chemistry in the solution process, along with discussing recent examples of applying the solution method to fabricate high-quality optical and photonic components.

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Section: Solution Propertiesmentioning

confidence: 99%

A review on solution processing of chalcogenide glasses for optical components

Zha¹,

Waldmann²,

Arnold³

2013

Opt. Mater. Express

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“…High photosensitivity in the visible spectrum is a well-known and widely used property of ChGs [38][39][40][41][42], and solution-derived ChG films have recently been shown to exhibit photosensitivity similar to that of traditional thermally evaporated films [43][44][45]. The absorption of light with near-band gap energy produces local modifications of the atomic structure of the glass and therefore to its optical properties, i.e.…”

Section: Leveraging Photosensitivity For Post-fabrication Trimmingmentioning

confidence: 99%

Integrated chalcogenide waveguide resonators for mid-IR sensing: leveraging material properties to meet fabrication challenges

Carlie¹,

Musgraves²,

Zdyrko³

et al. 2010

Opt. Express

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In this paper, attributes of chalcogenide glass (ChG) based integrated devices are discussed in detail, including origins of optical loss and processing steps used to reduce their contributions to optical component performance. Specifically, efforts to reduce loss and tailor optical characteristics of planar devices utilizing solution-based glass processing and thermal reflow techniques are presented and their results quantified. Post-fabrication trimming techniques based on the intrinsic photosensitivity of the chalcogenide glass are exploited to compensate for fabrication imperfections of ring resonators. Process parameters and implications on enhancement of device fabrication flexibility are presented.

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“…Arsenic sulfide is known for its photo-induced structural and optical changes, which has led to its application in optical imaging, hologram recording, electro-optic information storage devices and optical mass memories. Focusing on these applications, thin films of the material have been prepared by vacuum evaporation [1,2], physical vapour deposition [3], spin coating [4], electrodeposition [5] and chemical deposition methods [6,7], and their characteristics are reported. Pulsed laser deposition of As 2 S 3 thin films for waveguide applications [8] and the temperature dependence of holographic recording in vacuum evaporated arsenic sulfide thin films on chromiumcoated glass substrates [9] have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Thin films of arsenic sulfide by chemical deposition and formation of InAs

Méndez

Nair

2006

Semicond. Sci. Technol.

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We report a method for obtaining thin films of arsenic sulfide by chemical bath deposition and the subsequent formation of InAs by heating the films with a vacuum-deposited coating of In. X-ray diffraction (XRD) studies have shown that the thin film deposited from chemical baths of pH ∼2, prepared by mixing aqueous acidic solutions of As(III) with sodium thiosulfate, is a composite film of crystalline As 2 O 3 and As 2 S 3 , with the incorporation of sulfur. When heated at 150-250 • C, the As 2 O 3 component transforms to As 2 S 3 , but still with very few identifiable peaks in the XRD patterns of the annealed samples. The films have a direct band gap of ≈2.7 eV (as-prepared) and ≈2.52 eV (heated at 250 • C), with forbidden optical transitions. The sheet resistance of the film (300 nm thick) is 10 12 , and the electrical conductivity is 10 −8 −1 cm −1. After being heated in a sulfur-rich atmosphere at >200 • C, the films show photosensitivity. The As 2 O 3 /As 2 S 3 thin film with an evaporated indium film, when heated at 250 • C in nitrogen or air, produces InAs as a major crystalline component. In this case, In 2 S 3 or In 2 O 3 may be present as a minor component in the films, depending on whether heating is done in nitrogen or air, respectively. The optical band gap of this InAs component is direct, 0.5 to 0.8 eV, depending on the film thickness and heating process. These composite films are photosensitive; a dark conductivity of 0.05 −1 cm −1 in the films formed in nitrogen is ascribed to InAs and 5 −1 cm −1 in the films formed by heating in air is ascribed to the In 2 O 3 component. The photoconductivity of the films is of the same order of magnitude as the dark conductivity in each case.

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Growth and optical characterization of spin-coated As2S3 multilayer thin films

Cited by 21 publications

References 9 publications

A review on solution processing of chalcogenide glasses for optical components

A review on solution processing of chalcogenide glasses for optical components

Integrated chalcogenide waveguide resonators for mid-IR sensing: leveraging material properties to meet fabrication challenges

Thin films of arsenic sulfide by chemical deposition and formation of InAs

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