Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:mi mathvariant="normal">μ</mml:mi></mml:mrow></mml:math>m high-speed lasers

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

doi:10.1016/j.jcrysgro.2018.03.036

Cited by 9 publications

(2 citation statements)

References 29 publications

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“…We analyze an InAs/InP TI QD SOA operating at 1.55 µm whose epitaxial structure and dimenssions are described in [21]. A hybrid state that couples the first excited state of the QD and the bottom of the IW continuum of states [14] ensures a fast carrier capture with a typical time constant of about 1 ps.…”

Section: Simulation Pump-probe Model Of the Ti-qd Soamentioning

confidence: 99%

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

et al. 2018

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The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is not fully understood microscopically and therefore it is difficult to optimize those laser structures. We present here a numerical study of the broad band carrier dynamics in a tunneling injection quantum dot gain medium in the form of an optical amplifier operating at 1.55 µm.Charge carrier tunneling occurs in a hybrid state that joins the quantum dot first excited state and the confined quantum well -injection well states. The hybrid state, which is placed energetically roughly one LO phonon above the ground state and has a spectral extent of about 5 meV , dominates the carrier injection to the ground state. We calculate the dynamical response of the inversion across the entire gain spectrum following a short pulse perturbation at various wavelengths and for two bias currents. At a high bias of 200 mA, the entire spectrum exhibits gain; at 30 mA, the system exhibits a mixed gain -absorption spectrum. The carrier dynamics in the injection well is calculated simultaneously. We discuss the role of the pulse excitation wavelengths relative to the gain spectrum peak and demonstrate that the injection well responds to all perturbation wavelengths, even those which are far from the region where the tunneling injection process dominates. * ikhanonkin@technion.ac.il

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Section: Simulation Pump-probe Model Of the Ti-qd Soamentioning

confidence: 99%

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

et al. 2018

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“…22 To benefit from the advantages of the TI design in telecommunication applications, InAs QDs within an InGaAlAs barrier lattice matched to the InP substrate are attractive due to their emission around the 1.55 µm wavelength and their re-duced size inhomogeneity. 8,[23][24][25][26][27][28] Further investigations of the InAs/InP material system include studies of the behavior of the QD ground state under the influence of varying QW parameters, as well as the carrier dynamics in TI structures at cryogenic temperatures. 28,29 For the simulation of carrier and laser dynamics in TI laser devices, the tunneling process is often described via rate equations, [30][31][32][33][34] using time constants extracted from experiments.…”

Section: Introductionmentioning

confidence: 99%

Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers

et al. 2018

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Tunnel-injection lasers promise various advantages in comparison to conventional laser designs. In this paper, the physics of the tunnel injection process is studied within a microscopic theory in order to clarify design requirements for laser structures based on quantum dots as active material and an injector quantum well providing excited charge carriers. We analyze how the electronic states of the injector quantum well and quantum dot levels should be aligned and in which way their coupling through the tunnel-injection barrier should be adjusted for optimal carrier injection rates into the quantum-dot ground state used for the laser transition. Our description of the tunnel-injection process combines two main ingredients: the tunnel coupling of the wave functions as well as the phonon-and Coulomb-assisted transition rates. For this purpose, material-realistic electronic state calculations for the coupled system of injector quantum well, tunnel barrier, and quantum dots are combined with a many-body theory for the carrier scattering processes. We find that the often assumed longitudinal-optical-phonon resonance condition for the level alignment has practically no influence on the injection rate of carriers into the quantum dot states. The structural design should provide optimal hybridization of the injector quantum well states with excited quantum dot states.

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Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing

Bauer

Sichkovskyi

Schnabel

et al. 2019

Journal of Crystal Growth

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Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers

Cited by 9 publications

References 29 publications

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers

Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing

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Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers

Cited by 9 publications

References 29 publications

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier

Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers

Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing

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Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers