Abstract:This article concerns the microstructure of self-assembled ErAs islands embedded in GaAs. The material is grown by molecular beam epitaxy. The nucleation of ErAs on GaAs occurs in an island growth mode leading to spontaneous formation of nanometer-sized islands. Several layers of ErAs islands separated by GaAs can be stacked on top of each other to form a superlattice. A series of such samples were grown with different depositions of ErAs at a growth temperature of 535°C. The microstructure of these samples wa… Show more
“…As the deposition is increased to 0.5 ML, the density of particles increases to about 2.2ϫ10 11 cm Ϫ2 , with the average particle area increasing to 120 nm 2 . By increasing the deposition to 1 ML the particle density is reduced to about 1.5ϫ10 11 cm Ϫ2 while the average particle area increases to 300 nm 2 . The height of the islands remained relatively constant between 10 and 16 Å ͑or about 4 ML͒ for these depositions.…”
Section: 13mentioning
confidence: 99%
“…10 In this letter we examine the growth regime prior to the formation of a complete film. In this regime the ErSb spontaneously forms nanometer-sized particles similar to ErAs on GaAs 11 and InGaAs. 6 We grow and study the properties of composite materials consisting of layers of self-assembled ErSb semimetallic particles within a GaSb matrix.…”
We demonstrate the growth by molecular beam epitaxy of a metal/semiconductor composite consisting of epitaxial semimetallic ErSb particles in a GaSb matrix. The ErSb nucleates in an island growth mode leading to the spontaneous formation of nanometer-sized particles. These particles are found to preferentially grow along a [011] direction on a (100) GaSb surface. The particles can be overgrown with GaSb to form an epitaxial superlattice consisting of ErSb particles between GaSb spacer layers. The size of the ErSb particles increases monotonically with the deposition. The carrier concentrations in the superlattices are found to be dependent on both the size and density of the ErSb particles. Smaller particles and closer layer spacings reduce the hole concentration in the film.
“…As the deposition is increased to 0.5 ML, the density of particles increases to about 2.2ϫ10 11 cm Ϫ2 , with the average particle area increasing to 120 nm 2 . By increasing the deposition to 1 ML the particle density is reduced to about 1.5ϫ10 11 cm Ϫ2 while the average particle area increases to 300 nm 2 . The height of the islands remained relatively constant between 10 and 16 Å ͑or about 4 ML͒ for these depositions.…”
Section: 13mentioning
confidence: 99%
“…10 In this letter we examine the growth regime prior to the formation of a complete film. In this regime the ErSb spontaneously forms nanometer-sized particles similar to ErAs on GaAs 11 and InGaAs. 6 We grow and study the properties of composite materials consisting of layers of self-assembled ErSb semimetallic particles within a GaSb matrix.…”
We demonstrate the growth by molecular beam epitaxy of a metal/semiconductor composite consisting of epitaxial semimetallic ErSb particles in a GaSb matrix. The ErSb nucleates in an island growth mode leading to the spontaneous formation of nanometer-sized particles. These particles are found to preferentially grow along a [011] direction on a (100) GaSb surface. The particles can be overgrown with GaSb to form an epitaxial superlattice consisting of ErSb particles between GaSb spacer layers. The size of the ErSb particles increases monotonically with the deposition. The carrier concentrations in the superlattices are found to be dependent on both the size and density of the ErSb particles. Smaller particles and closer layer spacings reduce the hole concentration in the film.
“…Constraining to a thickness of less than 1.8 monolayers of ErAs allows for high quality material growth. 70 The ErAs layer forms elongated islands and provides a quasimetallic behavior leading to excellent recombination performance. Photogenerated carriers can be efficiently captured in adjacent ErAs layers.…”
Section: Novel Materials For Photoconductorsmentioning
confidence: 99%
“…However, deposition of 1-2 ErAs monolayers 82 allows for ErAs island formation with quasimetallic properties and epitaxial overgrowth of the islands by high quality InGaAs material. 70 To allow for an efficient capture process of photogenerated carriers, an ErAs:InGaAs superlattice as in the ErAs:GaAs system is used. Short periods allow for short recombination times in the range of 300 fs as reported for a period of 5 nm.…”
Section: Novel Materials For Photoconductorsmentioning
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