Growth and microstructure of GeTe-Sb2Te3 heterostructures prepared by pulsed laser deposition

Cremer, Sonja; Voß, Lennart; Braun, Nils; Wolff, Niklas; Kienle, Lorenz; Lotnyk, Andriy

doi:10.1016/j.apsusc.2024.159679

Cited by 3 publications

(3 citation statements)

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“…A representative HAADF-STEM image of a single grain taken along [010] zone-axis orientation according to the rhombohedral Sb 2 Te 3 crystal structure is shown in Figure a. The latter reveals an atomic zigzag arrangement between the mono-, bi-, and multilayers highlighted by a green dashed line indicating the existence of twin boundaries . Furthermore, a faint bright-dark atomic (Z-) contrast modulation is visible with a periodicity in the horizontal direction of about 2 nm in which the Te atoms appear brighter ( Z = 52) than the Se atoms ( Z = 34).…”

Section: Resultsmentioning

confidence: 99%

“…The latter reveals an atomic zigzag arrangement between the mono-, bi-, and multilayers highlighted by a green dashed line indicating the existence of twin boundaries. 17 Furthermore, a faint bright-dark atomic (Z-) contrast modulation is visible with a periodicity in the horizontal direction of about 2 nm in which the Te atoms appear brighter ( Z = 52) than the Se atoms ( Z = 34). In fact, this coincides with the intended alternation between Sb 2 Te 3 and Sb 2 Se 3 deposition, where in this case the Sb 2 Se 3 adopts the R 3̅ m crystal structure of the Sb 2 Te 3 .…”

Section: Resultsmentioning

confidence: 99%

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Interfacial Distortion of Sb₂Te₃–Sb₂Se₃ Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Yang,

Daqiqshirazi,

Ritschel

et al. 2024

ACS Nano

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Interfacial Distortion of Sb₂Te₃–Sb₂Se₃ Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Yang,

Daqiqshirazi,

Ritschel

et al. 2024

ACS Nano

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“…Feng et al revealed that heterostructure GST/Sb 2 Te 3 can change the crystallizing mode, which further improved the crystallization rate . Cremer et al have investigated the microstructure of GeTe/Sb 2 Te 3 heterostructures and found the in diffusion depended upon the layer thickness and deposition parameters . Bryja et al investigated the growth of epitaxial two-dimensional (2D)-like Sb 2 Te 3 thin films, showing the high potential for neuromorphic computing .…”

Section: Introductionmentioning

confidence: 99%

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers

Zhang,

Wu,

et al. 2024

ACS Appl. Mater. Interfaces

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As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb 2 Te 3 material were designed and prepared by inserting the Sn 15 Sb 85 layer. The thermal and electrical properties of superlattice-like Sb 2 Te 3 /Sn 15 Sb 85 phase-change films can be adjusted by controlling the thickness ratio of Sb 2 Te 3 /Sn 15 Sb 85 . In comparison to the monolayer Sb 2 Te 3 film, the multilayer layer Sb 2 Te 3 / Sn 15 Sb 85 materials have a higher crystallization temperature, larger crystallization activation energy, and longer data lifetime, indicating the great improvement of thermal stability. The changes in the phase structure and vibrational modes of multilayer Sb 2 Te 3 /Sn 15 Sb 85 films were characterized by X-ray diffraction and Raman spectroscopy, respectively. The presence of Sn 15 Sb 85 layers restrains grain growth and refines the grain size. The multilayer Sb 2 Te 3 /Sn 15 Sb 85 films exhibit better surface flatness, smaller surface potential undulation, and lower thickness variations than single-layer Sb 2 Te 3 . Phase-change memory cells based on the [Sb 2 Te 3 (1 nm)/Sn 15 Sb 85 (9 nm)] 5 thin film has a lower threshold voltage (1.9 V) and threshold current (3.1 μA) compared to the Ge 2 Sb 2 Te 5 film. Meanwhile, the electrical heating model of a phase-change memory cell based on a [Sb 2 Te 3 (1 nm)/Sn 15 Sb 85 (9 nm)] 5 multilayer structure was established by multiphysics coupling analysis, proving the great improvement in heat transfer performance and efficiency. The experimental and theoretical studies confirm that the insertion of the Sn 15 Sb 85 layer can significantly improve the crystallization properties of Sb 2 Te 3 films, paving the way for optimizing the phase-change materials by regulating the microstructural parameters.

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Investigation of thermal stability improvement in Nb doped Sb2Te3

Zheng,

Xue,

Pei

et al. 2024

Journal of Alloys and Compounds

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Growth and microstructure of GeTe-Sb2Te3 heterostructures prepared by pulsed laser deposition

Cited by 3 publications

References 56 publications

Interfacial Distortion of Sb₂Te₃–Sb₂Se₃ Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Interfacial Distortion of Sb₂Te₃–Sb₂Se₃ Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers

Investigation of thermal stability improvement in Nb doped Sb2Te3

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Growth and microstructure of GeTe-Sb2Te3 heterostructures prepared by pulsed laser deposition

Cited by 3 publications

References 56 publications

Interfacial Distortion of Sb2Te3–Sb2Se3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Interfacial Distortion of Sb2Te3–Sb2Se3 Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb2Te3 Phase-Change Thin Film by Inserting Sn15Sb85 Layers

Investigation of thermal stability improvement in Nb doped Sb2Te3

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Interfacial Distortion of Sb₂Te₃–Sb₂Se₃ Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Interfacial Distortion of Sb₂Te₃–Sb₂Se₃ Multilayers via Atomic Layer Deposition for Enhanced Thermoelectric Properties

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb₂Te₃ Phase-Change Thin Film by Inserting Sn₁₅Sb₈₅ Layers