Growth and laser characterization of mixed Nd:LuxGd1−xVO4 laser crystals

Yu, Haohai; Yu, Yantuan; Zhang, Huaijin; Wang, Zhengping; Wang, Jing; Cheng, Xiufeng; Shao, Zongshu; Jiang, Minhua

doi:10.1016/j.jcrysgro.2006.05.022

Cited by 46 publications

(19 citation statements)

References 19 publications

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“…Higher output power will be obtained if the AR coatings at the crystal end faces were optimized at 1.34 μm. To achieve efficient passively Q-switched laser performance, it is necessary to make sure that absorption saturation in the absorber occurs earlier than that in the gain (usually be called the second threshold condition) [8]. Considering the large ground state absorption crosssection (σ gs = 7.2 × 10 18 cm 2 ) of V…”

Section: Resultsmentioning

confidence: 99%

“…Compared with single laser crystals, mixed crystal materials, usually with moderate stimulated emission cross-section and large fluorescence bandwidth, are very attractive for Qswitching and mode-locking of solid-state lasers [1][2][3][4][5][6][7][8]. The moderate stimulated emission cross-section is helpful to suppress parasitic oscillation, as well as the large fluorescence bandwidth is benefit to generate short pulse duration.…”

Section: Introductionmentioning

confidence: 99%

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Continuous wave and passively Q-switched Nd:Lu _xY_1-x VO_4 laser at 134 μm with V^3+:YAG as the saturable absorber

Zhang¹,

Huang²,

Xu³

et al. 2011

Opt. Express

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we demonstrated a diode-pumped continuous wave and passively Q-switched Nd:Lu x Y 1-x VO 4 laser at 1.34 μm with V 3+ :YAG as the saturable absorber. The crystal Nd:Lu x Y 1-x VO 4 with equal ionic ratio (x = 0.5) shows better laser performance. The maximum continuous wave output power of 1.45 W was obtained with the optical efficiency of 20.1% and the slope efficiency of 24.5%. For the pulsed operation, the minimum pulse width achieved was 42 ns with the pulse repetition frequency of 142 kHz, and the single pulse energy and the peak power were estimated to be 6.62 μJ and 157.6 W, respectively. Opt. Commun. 230(1-3), 191-195 (2004). 12. J. Liu, J. Wang, and J. He, "Diode-pumped passively Q-switched c-cut Nd:GdVO4 laser," Opt. Commun. 219(1-6), 317-321 (2003

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Continuous wave and passively Q-switched Nd:Lu _xY_1-x VO_4 laser at 134 μm with V^3+:YAG as the saturable absorber

Zhang¹,

Huang²,

Xu³

et al. 2011

Opt. Express

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“…They are assigned to spin-and electric-dipole-allowed transitions from the ground state ( 4 I 9/2 ) to the 4 D 3/2 , 4 G 11/2 + 2 P 3/2 + 2 D 3/2 + 2 G 9/2 , 2 K 13/2 + 4 G 7/2 + 4 G 9/2 , 4 G 5/2 + 2 G 7/2 , 4 F 9/2 , 4 F 7/2 + 4 S 3/2 , 4 F 5/2 + 2 H 9/2 and 4 F 3/2 energy levels [23], respectively. The full-width at halfmaximum (FWHM) centered at about 808 nm is 6.8 nm, which is larger than that of Nd:YAG (FWHM¼0.9-2.1 nm) [24,25] and Nd:LuAG (FWHM¼5 nm) [11].…”

Section: Spectral Properties Of Nd:lugg Crystalmentioning

confidence: 99%

Growth and properties of Nd:Lu3Ga5O12 laser crystal by floating-zone method

Wu¹,

Yao²,

Zhang³

et al. 2010

Journal of Crystal Growth

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“…Based on the above suppositions, the crystals Nd:Gd x Y 1−x VO 4 [7], Nd:Gd x Lu 1−x VO 4 [8], and Nd:Lu x Y 1−x VO 4 [9] were produced and studied by using Nd:YVO 4 , Nd:GdVO 4 , and Nd:LuVO 4 single crystals as starting points. All the results indicate that the random placement of the cations at the same lattice site generates inhomogeneous spectrum broadening, which is favorable for Q-switching and mode-locking applications [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Direct investigation of inhomogeneous spectrum broadening in Nd^3+:Gd_xY_1−xVO_4 series crystals

Zhao

Wang

et al. 2013

J. Opt. Soc. Am. B

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A study of inhomogeneous spectrum broadening in Nd 3 -doped Gd x Y 1−x VO 4 (x 0, 0.37, 0.47, 0.63, and 0.83) series crystals is reported for the first time, to the best of our knowledge. Due to the random placement of the Gd and Y ions in the lattice, the spectra are inhomogeneously broadened, a result that is favorable for Q-switching and mode locking. The fluorescence lifetime and stimulated emission cross-section of the 4 F 3∕2 to 4 F 11∕2 and 4 F 13∕2 state transitions are calculated and measured as a function of increasing x and temperature. The variation of the spectrum anisotropy is also discussed as a function of different temperature and composition values. All the results indicate that the random placement of different cations at the same lattice site is an efficient technology for the modification of emission properties that fulfill different requirements of laser applications.

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Growth and laser characterization of mixed Nd:LuxGd1−xVO4 laser crystals

Cited by 46 publications

References 19 publications

Continuous wave and passively Q-switched Nd:Lu _xY_1-x VO_4 laser at 134 μm with V^3+:YAG as the saturable absorber

Continuous wave and passively Q-switched Nd:Lu _xY_1-x VO_4 laser at 134 μm with V^3+:YAG as the saturable absorber

Growth and properties of Nd:Lu3Ga5O12 laser crystal by floating-zone method

Direct investigation of inhomogeneous spectrum broadening in Nd^3+:Gd_xY_1−xVO_4 series crystals

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