Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Abstract

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host–intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.

Van der Waals Epitaxy of Bi2Te2Se/Bi2O2Se Vertical Heterojunction for High Performance Photodetector

“…Atomically thin 2D materials have attracted intensive interest due to their exotic properties, which imbue them with great potential in electronic and optoelectronic applications. [ 1–5 ] Among the other well‐established 2D materials, bismuth oxyselenide (Bi 2 O 2 Se) have emerged as a novel semiconductor with outstanding carrier mobility (≈450 cm 2 V –1 s –1 at room temperature), ambient stability and proper bandgap (≈0.8 eV), making Bi 2 O 2 Se as a promising candidate for high performance optoelectronic devices. [ 6–14 ] Extensive efforts have been paid to tailor the intrinsic material properties in Bi 2 O 2 Se based devices such as transistors, memristors, and photodetectors by optimizing material synthesis.…”

Enhancement of Photoresponse on Narrow-Bandgap Mott Insulator α-RuCl3 via Intercalation

“…Intercalation is an effective approach to modify the properties of two-dimensional (2D) layered materials by incorporating guests into their interlayer spacing. Various properties such as the optical, , magnetic, − thermoelectric, electrical transport, − and telecommunication of 2D materials have been modified or improved via intercalation.…”

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

“…Liquid metals can be transferred to solid‐state with single‐crystal metals as the symmetric matched substrate, which is appropriate for the growth of high‐quality 2D materials during the CVD process. [ 157 ] Daeneke and co‐workers reported a liquid metal reaction environment, which was utilized in synthesis of atomically thin metal oxides (HfO 2 , Al 2 O 3 , Gd 2 O 3 ) at room temperature. [ 63 ] This synthetic strategy without complex equipment broaden the way in preparing 2D metal oxides semiconductor materials.…”