Growth and in-depth distribution of thin metal films on silicon (111) studied by XPS: inelastic peak shape analysis

Patternable Large‐Scale Molybdenium Disulfide Atomic Layers Grown by Gold‐Assisted Chemical Vapor Deposition

“…Received: October 31, 2013 Published online: January 13,2014 . Keywords: 2D nanomaterials · chemical vapor deposition · molybdenum disulfide · patterned growth · surface alloys…”

“…[8][9][10][11][12] However, none of these syntheses has accomplished all of the properties of uniformity, scalability, and patternability owing to their intrinsic limitations. [13] Among these, the preparation of an atom-thick and uniform Mo layer over a wide area of a substrate, that is, a large-scale Mo reservoir, is currently the most difficult hurdle to overcome.…”

Amorphous Fe-Si and Fe-Ge nanostructures quantitatively analyzed by x-ray-photoelectron spectroscopy

“…Using a deconvolution algorithm and a trial-and-error procedure the growth mode of the overlayer and/or the substrate can be quantitatively determined. 16 Additional information obtained from conventional photoelectron spectroscopy enables us to quantitatively determine the nanostructure of Fe/Si and Fe/Ge structures prepared at room temperature and at 40 K. We find that upon evaporation of Fe on Si or Ge, substantial interdiffusion of semiconductor material into the Fe capping layer takes place. A homogeneous compound interface layer is formed, that separates phases of pure semiconductor and Fe material.…”

Initial stages of Au adsorption on the Si(111)-(7×7)surface studied by scanning tunneling microscopy

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] These studies aimed at the understanding of the formation of the Au/Si interface as a model metal-semiconductor system. Many techniques includinguger electron spectroscopy, 1,3,6,11,12 photoemission spectroscopy, 2,6,7,[9][10][11]13,15 low-energy electron diffraction, 3,6,13 electron-energy-loss spectroscopy, 3,4 ion scattering technique, 5 x-ray standing-wave spectroscopy, 8 and ballistic electron emission microscopy 14 have been applied to study the behavior of Au RT growth on the Si͑111͒ surface. Scanning tunneling microscopy ͑STM͒ studies mainly concentrated on the investigation of structures of the annealed interfaces.…”