Growth and fabrication of sputtered TiO2 based ultraviolet detectors

Huang, Huolin; Xie, Yannan; Zhang, Zifeng; Feng, Zhaochi; Xu, Qiang; Zhang, Wu

doi:10.1016/j.apsusc.2013.12.142

Cited by 48 publications

(18 citation statements)

References 40 publications

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“…As a result, the current transport in an a-GaO x PD is dominated by field emission and thermionic field emission rather than thermionic emission (process 4), resulting in the formation of an ohmic contact and a large dark current. 29,30 Additionally, the high electrical conductivity of the a-GaO x thin film, which results from the high intrinsic carrier concentration, also causes a relatively large dark current and the formation of ohmic contact. 30 After exposure to 254 nm and 70.5-μW/cm 2 illumination, both PDs exhibited considerable photoresponses with significant current increases, as shown in Figure 6a.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

et al. 2017

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Recently, Ga2O3-based, solar-blind photodetectors (PDs) have been extensively studied for various commercial and military applications. However, to date, studies have focused only on the crystalline phases, especially β-Ga2O3, and the crystalline quality must be carefully controlled because of its strong impact on device characteristics. Based on previous reports, amorphous-semiconductor-based PDs can also be expected to exhibit excellent photodetection characteristics. In this work, amorphous gallium oxide thin films were deposited by radio frequency (RF) magnetron sputtering, and the metal–semiconductor–metal (MSM) PD was fabricated and compared with a β-Ga2O3 film prepared side-by-side as the control sample. The as-sputtered film possessed a high density of defects, including structural disorders, oxygen vacancies, and likely, dangling bonds, resulting in record-high responsivity (70.26 A/W) for a thin-film-type gallium oxide PD due to a high internal gain and the contribution of extrinsic transitions despite a relatively large dark current. The high sensitivity was further confirmed by a high 250 nm/350 nm rejection ratio exceeding 105, the specific detectivity as large as 1.26 × 1014 Jones, and a cutoff wavelength of 265.5 nm. A rapid recovery (0.10 s) rather than a strong, persistent photoconductivity was observed and attributed to effective surface recombination. Our findings contribute to a more comprehensive understanding of highly nonstoichiometric amorphous gallium oxide thin films and reveal additional pathways for the development of high-performance, solar-blind PDs that are inexpensive, large-area, and suitable for mass production.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

et al. 2017

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“…UV photodetection has been widely studied in the last few years [1][2][3][4][5][6][7][8][9][10] due to its large civil and military application elds such as secure space-to-space communications, pollution monitoring, water sterilization, and ame sensing. The semiconductor based UV photodetection process is a simple physical phenomenon based on electron-hole generation into a semiconductor under photon shelling.…”

Section: A Introductionmentioning

confidence: 99%

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

et al. 2014

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We explored for the first time the ability of a three-dimensional polyacrylonitrile/ZnO material prepared by a low-cost and scalable synthesis method based on the combination of electrospinning and atomic layer deposition (ALD) as a new material with a large surface area to enhance the performance of UV photodetection. The UV photoresponse current was enhanced by a factor of 250 compared to a flat electrode. In addition an increase by a factor of 1.3 of the recovery time has been observed which is negligible versus the huge amount of current enhancement. The greatly improved performance and the good stability of these nanostructured electrodes induce exciting materials for use in UV sensor applications. A IntroductionUV photodetection has been widely studied in the last few years 1-10 due to its large civil and military application elds such as secure space-to-space communications, pollution monitoring, water sterilization, and ame sensing. The semiconductor based UV photodetection process is a simple physical phenomenon based on electron-hole generation into a semiconductor under photon shelling. Basically when a photon with energy larger than the one of the semiconductor band-gap is absorbed, an electron-hole pair is produced. This induces a change of the electrical conductivity properties of the semiconductor. Low band gap energy semiconductors have been widely used for UV photodetection, especially the Si-based photodetectors (E g ¼ 1.1 eV). Despite both their high sensitivity and quick response advantages, low E g UV photodetectors are sensitive to low energy photons (visible and infrared), and thus, they require the insertion of protection lters to avoid signal/ noise related to those low electron energies. Moreover an ultrahigh vacuum and a very high voltage supply were required. 11 The disadvantages of the low E g based photodetectors disappear in the high band gap semiconductors. Moreover, wide-band gap materials are both chemically and thermally stable which is an advantage for devices operating in harsh environments. [12][13][14] Among the high band gap semiconductor category, ZnO is one of the most widely used semiconductors for UV photodetection due to its high chemical stability, low cost, and large band gap of 3.37 eV at room temperature. Mollow et al. reported the rst UV photoresponse in ZnO lms in 1940. 15 Since then, many complex ZnO-based photodetectors with high performance have been reported, such as p-n junction, p-i-n junction and Schottky junction. 3,16-23 ZnO UV sensors have been prepared using different deposition techniques such as Metal Organic Chemical Vapor Phase Deposition (MOCVD), 24,25 laser assisted molecular beam deposition (LAMBD), 26 radio frequency (RF) magnetron sputtering, 27-29 atomic-layer deposition (ALD) 30 and molecular beam epitaxy (MBE). 31,32 Moreover different electrode types such as Au, Ag, Pt, Ni, Pd, Cr, Al, and Ru have been elaborated and their performances have been investigated. Nanostructured ZnO for UV detection was also investigated. They show promisi...

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“…Moreover, further improvement in overall performance could be realized by narrowing the electrodes spacing and/or improving the electrode/β-Ga 2 O 3 interface quality as well. [61,62,68] More importantly, the high-density Al@Al 2 O 3 core−shell nanoplasmonic array can also be applied in a heterojunction-type Ga 2 O 3 solarblind PD, which has a much faster speed in principle. [30,69]…”

Section: Resultsmentioning

confidence: 99%

Ultra‐Sensitive β‐Ga₂O₃ Solar‐Blind Photodetector with High‐Density Al@Al₂O₃ Core−Shell Nanoplasmonic Array

Qian

et al. 2022

Advanced Optical Materials

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β‐Ga2O3 solar‐blind photodetectors (PDs) are attracting great attention for broad applications. However, their detection sensitivities are still lower than expected after tremendous efforts. The phenomenon of localized surface plasmon resonance (LSPR) offers another approach beyond conventional techniques to engineer the photodetection performance, but extending the plasmonic properties into the deep‐ultraviolet region faces severe challenges, among which strictly controlling the nanostructures structural properties is extremely prominent besides material selection. Herein, well‐defined Al@Al2O3 core−shell nanostructure arrays are fabricated with sub‐50 nm feature sizes, narrow dimension distributions, periodic graphene‐like patterns, and extremely high densities (up to 152.7 counts µm−2). The decorated β‐Ga2O3 PDs exhibit significantly enhanced sensitivities without response spectra broadening. Particularly, the sample with a 42‐nm nanostructure array possesses an ultrahigh specific detectivity (4.22 × 1015 Jones), being one of the top among film‐type gallium oxide PDs, and an excellent responsivity of 216.0 A W−1 peaked at 235 nm. Moreover, the passivation effect of self‐terminating native oxide shell is confirmed. The finite‐difference time‐domain simulations based on isolated, dimer, and arrayed models not only demonstrate the presence of LSPR, but also reveal the critical contribution of nanostructure density. The findings provide an alternative platform to break the bottleneck and develop ultra‐sensitive, truly solar‐blind PDs for advanced optoelectronic systems.

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Growth and fabrication of sputtered TiO2 based ultraviolet detectors

Cited by 48 publications

References 40 publications

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

Ultra‐Sensitive β‐Ga₂O₃ Solar‐Blind Photodetector with High‐Density Al@Al₂O₃ Core−Shell Nanoplasmonic Array

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Growth and fabrication of sputtered TiO2 based ultraviolet detectors

Cited by 48 publications

References 40 publications

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

Ultra‐Sensitive β‐Ga2O3 Solar‐Blind Photodetector with High‐Density Al@Al2O3 Core−Shell Nanoplasmonic Array

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Ultra‐Sensitive β‐Ga₂O₃ Solar‐Blind Photodetector with High‐Density Al@Al₂O₃ Core−Shell Nanoplasmonic Array