2007
DOI: 10.1002/adma.200602162
|View full text |Cite
|
Sign up to set email alerts
|

Growth and Electronic Transport in 9,10‐Diphenylanthracene Single Crystals—An Organic Semiconductor of High Electron and Hole Mobility

Abstract: Electron and hole transport is demonstrated on bulk crystals of the organic semiconductor 9,10‐diphenylanthracene (DPA). The high mobilities at room temperature for electrons (ca. 13 cm2 Vs–1) and holes (ca. 3.7 cm2 Vs–1) make DPA a prominent candidate for device applications. The hole mobility follows a bandlike transport at high temperatures (200K–400K) and a saturation behavior in the low‐temperature regime (see figure), the latter being discussed in the context of various transport models.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

5
52
0

Year Published

2010
2010
2021
2021

Publication Types

Select...
5
4
1

Relationship

0
10

Authors

Journals

citations
Cited by 74 publications
(57 citation statements)
references
References 19 publications
5
52
0
Order By: Relevance
“…The low mobility could be attributed to poor planarity structure of 22. In fact, derivative 21 also has a nonplanar structure, in which the dihedral angle between the planes of substitution (benzene ring) and core (anthracene) is about 67° [75,78].…”
Section: Acenes and Derivativesmentioning
confidence: 99%
“…The low mobility could be attributed to poor planarity structure of 22. In fact, derivative 21 also has a nonplanar structure, in which the dihedral angle between the planes of substitution (benzene ring) and core (anthracene) is about 67° [75,78].…”
Section: Acenes and Derivativesmentioning
confidence: 99%
“…Following rigorous material purification and setting optimal growth conditions, the electrical properties of the large-sized Bridgman-grown organic crystals matched well with those of the gas-phase-grown small crystals. The quality of Bridgman-grown DPA single crystals exhibited room temperature electron and hole mobility of 13 and 3.7 cm 2 /Vs, respectively [338], which were extremely useful for semiconductor devices. The Bridgman method produced large-sized crystals limited to the ampoule dimensions used, but the strain at the boundary between the crystal and the quartz walls of the ampoule did induce cracks, stress, or small-angle grain boundaries in the crystals.…”
Section: Melt-grown Os Crystalsmentioning
confidence: 99%
“…3 9,10-Diphenylanthracene (DPA) has recently attracted attention as an organic semiconductor with high electron and hole mobilities; the conducting mechanism is not fully understood but probably results from an effective intermolecular linking between successive layers inside the crystal, via the anthracene-backbone-phenyl-groups. 7 DPA crystallises in the space group C2/c with the molecule residing on the centre of symmetry at (¼, ¼, 0) and the two phenyl groups almost orthogonal (67.8°) to the anthracene backbone. Its ambient-pressure structure was first reported in 1979 (ref.…”
Section: Introductionmentioning
confidence: 99%