Growth and device properties of ALD deposited ZnO films for CIGS solar cells

Arepalli, Vinaya Kumar; Lee, Woo Jung; Chung, Yong‐Duck; Kim, Jeha

doi:10.1016/j.mssp.2020.105406

Cited by 14 publications

(9 citation statements)

References 41 publications

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“…The conversion efficiencies (η) of the bare cell and PDMS with embedded ZnO‐nanorod film were 7.23% and 7.79%, respectively; the approximate open‐circuit voltage (V oc ) was 611 mV; the fill factor (FF) was 64.5%; and the short‐circuit currents (J sc ) were 18.27 and 19.77 mA/cm 2 . The conversion efficiencies (~7.23%) of our bare CIGS cells are comparable to those obtained in earlier literatures 26‐29 . Therefore, as J sc of the CIGS photovoltaic cell of the PDMS with the embedded ZnO nanorods is larger than the bare cell, the photovoltaic efficiency is enhanced.…”

Section: Resultssupporting

confidence: 88%

Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

et al. 2020

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Summary In this study, a flexible polydimethylsiloxane (PDMS) ARL with embedded ZnO‐NRs was fabricated on the surfaces of Cu(In,Ga)Se2 (CIGS) solar cells using the chemical solution method. Under the conditions of an AM1.5G solar spectrum, the application of the PDMS ARL of embedded ZnO‐NRs on the surface of a CIGS solar cell can effectively increase the conversion efficiency of the solar cell from 7.23% to 7.79%. In addition, broadband and omnidirectional light harvesting are important as the sun moves over time; therefore, omnidirectional anti‐reflection applications of various ARLs on CIGS photovoltaic cells were also studied.

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Section: Resultssupporting

confidence: 88%

Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

et al. 2020

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“…Such behaviors of CIGS power generation were also captured according to the literature. 40 The result from their experimental study pointed out that a maximum of 7.4% of performance where PR CIGS30 and PR CIGS90 are the PR values of CIGS_30 and CIGS_90 modules, respectively. Figure 14 shows the difference between two CIGS modules by selected hour and month to capture the combined effects and relationships between each module's power outputs and external factors.…”

Section: Pv Performance Ratio Of the Cigs Module Under The Diffuse Irradiancementioning

confidence: 99%

“…There is still a lack of studies understanding the adoption of the CIGS module's characteristics and improvement for BIPV applications effectively. 40,41 Such issues have been explored by the literature studies [42][43][44][45] to identify the unexpected reduction in power generation regarding angle-dependent losses. Geisemeyer et al 46 pointed out that the angle-dependent loss could be a major issue with practical PV generation performance.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of flexible CIGS modules based on operational data under outdoor conditions

Lee

Kim

et al. 2021

Energy Science & Engineering

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“…The ZnO semiconductor has been widely applied in a variety of solar cells, such as perovskite solar cells [ 18 ], organic solar cells [ 19 ], Sb 2 Se 3 solar cells [ 20 ], CIGS solar cells [ 21 ], CZTSSe solar cells, etc., due to advantages which include excellent N-type characteristics, wide E g (3.3 eV), non-toxicity, and abundant reserves [ 22 ]. At present, the buffer layers most commonly used in Cd-free CZTSSe solar cells with over 10% PCE are Zn 1−x Sn x O (ZTO) films obtained by doping Sn elements into ZnO films [ 23 ].…”

Section: Introductionmentioning

confidence: 99%

Efficient Environmentally Friendly Flexible CZTSSe/ZnO Solar Cells by Optimizing ZnO Buffer Layers

et al. 2023

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Flexible CZTSSe solar cells have attracted much attention due to their earth-abundant elements, high stability, and wide application prospects. However, the environmental problems caused by the high toxicity of the Cd in the buffer layers restrict the development of flexible CZTSSe solar cells. Herein, we develop a Cd-free flexible CZTSSe/ZnO solar cell. The influences of the ZnO films on device performances are investigated. The light absorption capacity of flexible CZTSSe solar cells is enhanced due to the removal of the CdS layer. The optimal thickness of the ZnO buffer layers and the appropriate annealing temperature of the CZTSSe/ZnO are 100 nm and 200 °C. Ultimately, the optimum flexible CZTSSe/ZnO device achieves an efficiency of 5.0%, which is the highest efficiency for flexible CZTSSe/ZnO solar cells. The systematic characterizations indicate that the flexible CZTSSe/ZnO solar cells based on the optimal conditions achieved quality heterojunction, low defect density and better charge transfer capability. This work provides a new strategy for the development of the environmentally friendly and low-cost flexible CZTSSe solar cells.

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Growth and device properties of ALD deposited ZnO films for CIGS solar cells

Cited by 14 publications

References 41 publications

Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

Antireflection layer of ZnO nanorod embedded in PDMS film for enhancing omnidirectional photovoltaic performance of CIGS photovoltaic cell

Performance evaluation of flexible CIGS modules based on operational data under outdoor conditions

Efficient Environmentally Friendly Flexible CZTSSe/ZnO Solar Cells by Optimizing ZnO Buffer Layers

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