Growth and defect structure of ZnGeP2 crystals

Verozubova, G. A.; Okunev, A. O.; Gribenyukov, A. I.; Trofimiv, A.Yu.; Trukhanov, E. M.; Колесников, А. В.

doi:10.1016/j.jcrysgro.2009.11.009

Cited by 51 publications

(37 citation statements)

References 17 publications

(17 reference statements)

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“…It can be seen from Fig. 6 that not only for the as-grown crystal but also for the annealed samples, there is relatively high absorption in the wavelength range of 1.3-2.5 lm, which are caused by the point defects in the crystal [3,5,13]. The crystals have the prominent transparency in the wavelength range of Table 1.…”

Section: Ir Spectra Analysismentioning

confidence: 96%

“…Wide transparent range (0.65-12.00 lm), large nonlinear optical coefficient (d 36 = 75 pmÁV -1 ) and high thermal conductivity (0.35 WÁcm -1 ÁK -1 ) make it an attractive NLO material [2,3]. It also has unique performances in the aspects of laser damage threshold, chemical durability and mechanical processing [4].…”

Section: Introductionmentioning

confidence: 99%

“…Two volatile components (Zn and P) not only have high vapor pressure but also form thermally stable binary phases Zn 3 P 2 and ZnP 2 in the process of polycrystalline synthesis, which can result in component deviations from stoichiometry in the growth process of ZGP single crystal. Verozubova et al [3,5] reported that Zn 3 P 2 might precipitate from ZGP melt during growth. Degradation of the optical performance of ZGP is commonly associated with the deviations from stoichiometry which can lead to large amounts of point defects.…”

Section: Introductionmentioning

confidence: 99%

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Annealing and optical homogeneity of large ZnGeP2 single crystal

et al. 2016

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A high-quality ZnGeP 2 (ZGP) single crystal with large size of U30 mm 9 80 mm was grown by a modified vertical Bridgman method. ZGP wafers were annealed with ZGP polycrystalline powder for 300 h at 550, 600 and 650°C, respectively. The as-grown and annealed crystals were characterized by X-ray diffraction (XRD) analysis, Fourier transform infrared spectroscopy (FTIR), IR microscope and energy-dispersive spectroscopy (EDS). Results show that the quality of all wafers is improved evidently after annealing and the optimum annealing temperature obtained is 600°C. The IR transmittance of the wafer measured by FTIR is up to 56.78 % at wavelength of 2.0 lm nearby and exceeds 59.00 % in the wavelength range of 3.0-8.0 lm. The deviations from stoichiometry decrease, and the homogeneity of the crystal is also improved after annealing. In this paper, scanning infrared map was proposed as a new nondestructive method to evaluate optical quality and homogeneity of crystal through comparing the IR transmittance with the three-dimensional IR spectral contour map.

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Section: Ir Spectra Analysismentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Annealing and optical homogeneity of large ZnGeP2 single crystal

et al. 2016

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“…На внешней поверхности термической уста-новки имеем (2) где α -коэффициент теплоотдачи, Вт/(м 2 · К); ε -приведенная степень черноты; σ -постоянная Стефана−Больцмана, Вт/(м 2 · К 4 ); T 0 -температура окружающей среды, К, r -радиус внешней поверх-ности установки.…”

Section: математическая модель тепловых процессов для сопровождения пunclassified

“…Эксперимен-тальные исследования показали [2,3], что в кристаллах больших размеров, выращенных методом Бриджмена, часто наблюдается пространственная неоднородность свойств, которая в первую очередь определяется составом, а при фик-сированном составе существенно зависит от скорости роста и формы фронта кристаллизации [4]. Напри-мер, локальные осевые неоднород-ности кристаллической структуры связаны с отклонениями мгновен-ной скорости роста кристалла от скорости перемещения ростового контейнера, а радиальные неодно-родности определяются формой фронта кристаллизации.…”

Section: Introductionunclassified

Application of Mathematical Model for Support of Crystal Growth Process in Multizone Thermal Installations

Филиппов¹,

Грибенюков²,

Гинсар³

et al. 2015

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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X‐Ray Topography Characterization of the Bridgman‐Grown Crystals of Zinc Germanium Phosphide

Kaloyan

Подурец

Прохоров

et al. 2018

Crystal Research and Technology

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Samples of the Bridgman-grown nonlinear optic crystal of ZnGeP 2 are studied using the methods of topography on a laboratory source and on a synchrotron radiation source. Methods of quasi-plane-wave topography, white beam topography, and rocking curve topography are used. Dislocation bundles, growth striations, small-angle boundaries, and other defects are observed. The macroscopic distribution of defects in crystals and disorientations present in the crystal are studied. The mechanism of formation of images of growth striations is discussed. Digital analysis of the growth striations is carried out to characterize the growth process.

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Growth and defect structure of ZnGeP2 crystals

Cited by 51 publications

References 17 publications

Annealing and optical homogeneity of large ZnGeP2 single crystal

Annealing and optical homogeneity of large ZnGeP2 single crystal

Application of Mathematical Model for Support of Crystal Growth Process in Multizone Thermal Installations

X‐Ray Topography Characterization of the Bridgman‐Grown Crystals of Zinc Germanium Phosphide

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