Growth and crystal structures in heteroepitaxial CdS deposited on GaP

Heteroepitaxy of Chemically Deposited CdS on Large Lattice Mismatched (111) GaP

“…No very recent report on the epitaxy of CdS on GaP seems to have been published to our knowledge. Previous works in this field concern epitaxial CdS layers deposited from the vapor phase at much higher temperatures (300-600 °C) [9][10][11]. The fabrication of CdS/GaP heterostructures is basically interesting in the field optoelectronic devices based on wide gap semiconductors operating in the UV range.…”