Growth and crystal structure of the layered compound TlGaSe₂

Abstract

The semiconducting compound TlGaSe 2 was grown by solid state reaction technique. The crystal structure of this material was confirmed by single-crystal X-ray diffraction.

Compositional dependence of refractive index and oscillator parameters in TlGaS2xSe2(1−x) layered mixed crystals (0 ≤ x ≤ 1)

“…In this case, according to Kim and Yoko [20], dispersion energy E d is proportional to d 2 , where d is the interatomic bond length. For TlGaSe 2 crystals, the mean values of TleSe and GaeSe bond lengths were reported as 35.0 and 24.1 nm, respectively [21]. Whereas, the mean values of TleS and GaeS bond lengths in TlGaS 2 crystals were found to be 33.79 and 22.63 nm, respectively [22].…”

STRUCTURAL CHARACTERIZATION OF THE NEW DIAMOND-LIKE SEMICONDUCTOR CuNbGaSe3

“…Figure 4 shows a polyhedral view of the crystal structure with the four types of atoms-centered tetrahedraCuSe 4 , NbSe 4 , GaSe 4 and MSe 4 where all polyhedra are oriented in the same direction and are connected by the corners. (Mandel et al, 1973) and other adamantane compounds such as CuFe(Al,Ga,In)Se 3 (Mora et al, 2007;, CuFe 2 (Al,Ga,In)Se 4 (Delgado et al, 2008;Delgado et al, 2015), CuNi(Ga,In)Se 3 (Delgado et al, 2010), TlGaSe 2 (Delgado et al, 2007) and Cu 3 NbSe 4 (Lu and Ibers, 1993). CuNbGaSe 3 is a material of the semiconductor type, which improves the properties of a simple semiconductor like CuGaSe 2 because it ads spintronic applications due to its magnetic behavior.…”

Non‐standard anisotropy of the energy spectrum of a layered TlGaSe2 crystal

“…The lattice parameters $a = 10.772(3) {\rm {\AA}}$ , $b = 10.771(5) {\rm {\AA}}$ , $c = 15.636(8) {\rm {\AA}}$ , β = 100.06(3)° as well as the atomic coordinates in the unit cell can be found in Ref. 15, 16. There are two translationally non‐equivalent layers in the primitive unit cell lying in the plane spanned by the vectors a and b , see Fig.…”