Growth and characterization of ZnTe single crystal via a novel Te flux vertical Bridgman method

Investigation on Low-Temperature Thermoelectric Properties of Ag2Se Polycrystal Fabricated by Using Zone-Melting Method

“…The sintering temperatures of Ag 2 Se are usually higher than its phase transition temperature. , The possible Ag ion migration in the superionic cubic phase and/or Se volatilization at elevated temperature might generate elemental inhomogeneity, off-stoichiometry, Ag precipitates, and/or metastable monoclinic phase inside the sintered products, which would influence the final measured TE properties. In contrast, the zone-melting (ZM) method can directly generate bulk single crystal or polycrystal without experiencing the sintering process, which could provide a more suitable route to prepare Ag 2 Se. However, the TE properties of zone-melted Ag 2 Se have never been reported before.…”

Growth of ZnTe Semiconductor Crystal Via a Te Flux Zone Melting Method and Characterization of Its Properties

“…After that, the transmittance is moderately raised and finally reaches ≈64.5% near 2400 nm, which is comparable to the largest theoretical value ≈65.2%. [ 8 ]…”

“…Frankly speaking, the growth of ZnTe crystal is much difficult mainly attribute to its high melting point (1295 °C) and the serious Zn element volatilization. [ 8,9 ] In order to obtain ZnTe crystal from the standard Zn: Te = 1:1 mole ratio solution, various techniques have been developed in the past, such as vertical gradient freezing method, vertical Bridgman method, liquid encapsulated kyropoulos method, liquid‐encapsulated vertical gradient freezing method, and so on. [ 10–14 ] Nevertheless, the ZnTe crystals prepared via these techniques are usually deviate from stoichiometric ratio and the reproduction of large size crystal is poor.…”

Controllable preparation and rapid photoelectric response of homogeneous ZnTe microspheres

“…Up to now, there have been many conventional synthesis methods of ZnTe nanomaterials, including chemical vapor deposition, 12 molecular beam epitaxy, 13 magnetron sputtering, 14 the thermal evaporation method 15 and the vertical Bridgman method. 16 However, some of the above-mentioned methods have complex growth techniques, slow growth rates or low yields, and some require inert gas protection, which are not suitable for mass production. [17][18][19] Therefore, a low-cost and simple synthesis method is needed to prepare ZnTe micro-nanostructures, and a solvothermal method could meet this demand.…”