Growth and characterization of ZnSe on Si by atomic layer epitaxy

Yokoyama, M.; Chen, Nyen-Ts; Ueng, Herng-Yih

doi:10.1016/s0022-0248(00)00004-x

Cited by 20 publications

(6 citation statements)

References 15 publications

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“…processes that constitute redox reactions, a few demonstrations of ligand exchange reactions using H 2 Se have been reported. These include the ZnCl 2 -H 2 Se, 27,28 Me 2 Zn-H 2 Se, [29][30][31][32][33] and Me 2 Cd-H 2 Se 32,33 processes. Interestingly enough, in situ studies using surface photointerference showed that the latter two processes proceed with opposite mechanisms when it comes to the exchange reaction point, reactions 7a and 7b and 8a and 8b.…”

Section: Introductionmentioning

confidence: 99%

“…processes that constitute redox reactions, a few demonstrations of ligand exchange reactions using H 2 Se have been reported. These include the ZnCl 2 −H 2 Se, , Me 2 Zn−H 2 Se, − and Me 2 Cd−H 2 Se , processes. Interestingly enough, in situ studies using surface photointerference showed that the latter two processes proceed with opposite mechanisms when it comes to the exchange reaction point, reactions and and and . , In the case of ZnSe, the exchange reaction takes place during the Me 2 Zn pulse, while in the case of CdSe it takes place during the H 2 Se pulse. normalH 2 Se false( ads false) + Me 2 Zn false( normalg false) → ZnSe false( normals false) + 2 MeH false( normalg false) normalH 2 Se false( normalg false) → normalH 2 Se false( ads false) Me 2 Cd false( normalg false) → Me 2 Cd false( ads false) Me 2 Cd false( ads false) + normalH 2 Se false( normalg false) → CdSe false( normals false) + 2 MeH false( …”

Section: Introductionmentioning

confidence: 99%

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In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

et al. 2009

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Reaction mechanisms in the atomic layer deposition (ALD) of Sb 2 Te 3 from SbCl 3 and (Et 3 Si) 2 Te at 60 °C and GeTe from GeCl 2 3 C 4 H 8 O 2 (1,4-dioxane complex of GeCl 2 ) and (Et 3 Si) 2 Te at 90 °C were studied in situ with a quadrupole mass spectrometer (QMS) and a quartz crystal microbalance (QCM). Also some experiments were conducted on reactions in ALD of the phase change material GST (germanium antimony telluride, Ge 2 Sb 2 Te 5 ). The byproduct in both the binary telluride processes was found to be Et 3 SiCl, and about 78% (36%) of it was released during the SbCl 3 (GeCl 2 3 C 4 H 8 O 2 ) pulse. Obviously -Te(SiEt 3 ) surface groups serve as reactive sites for the metal precursors, cf. -OH surface groups in the oxide ALD processes that use water as the oxygen source. The dioxane, on the other hand, was expectedly found to be released entirely during the GeCl 2 3 C 4 H 8 O 2 pulse. When depositing GST the mechanism of the SbCl 3 -(Et 3 Si) 2 Te reaction was found to change so that only about 50% of the byproduct Et 3 SiCl was released during the SbCl 3 pulse. The same effect was experienced when the SbCl 3 -(Et 3 Si) 2 Te process was executed on surfaces of Al 2 O 3 and Au.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

et al. 2009

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“…Alkyl compounds of selenium and tellurium have been quite widely used in CVD but it appears that in ALD they cannot provide efficient exchange reactions with the common metal precursors. Therefore ALD of metal selenides and tellurides has been scarce, and mostly limited to selenides and tellurides of zinc and cadmium because these are the rare cases where elements can be used as precursors for both constituents. − In addition, for GST, plasma enhanced ALD has been attempted but the outcome has been a combination of CVD and ALD growth at best . Thus there is an obvious need to develop efficient ALD processes for metal selenides and tellurides.…”

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confidence: 99%

Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium

et al. 2009

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Atomic layer deposition (ALD) of metal selenide and telluride thin films has been limited because of a lack of precursors that would at the same time be safe and exhibit high reactivity as required in ALD. Yet there are many important metal selenide and telluride thin film materials whose deposition by ALD might be beneficial, for example, CuInSe2 for solar cells and Ge2Sb2Te5 for phase-change random-access memories. Especially in the latter case highly conformal deposition offered by ALD is essential for high storage density. By now, ALD of germanium antimony telluride (GST) has been attempted only using plasma-assisted processes owing to the lack of appropriate tellurium precursors. In this paper we make a breakthrough in the development of new ALD precursors for tellurium and selenium. Compounds with a general formula (R3Si)2Te and (R3Si)2Se react with various metal halides forming the corresponding metal tellurides and selenides. As an example, we show that Sb2Te3, GeTe, and GST films can be deposited by ALD using (Et3Si)2Te, SbCl3, and GeCl2 x C4H8O2 compounds as precursors. All three precursors exhibit a typical saturative ALD growth behavior and GST films prepared at 90 degrees C show excellent conformality on a high aspect-ratio trench structure.

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“…In order to lower the production cost and to realize large-scale production, ZnSe films have been deposited on various substrates, such as ITO glass [13], glass [14], silicon [15] and silica substrates [16]. Currently, ZnSe film deposited on glass substrate becomes a very promising issue for optoelectronic application.…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate temperature on the properties of electron beam evaporated ZnSe films

Ahamed¹,

Nagarethinam²,

Balu³

et al. 2010

Cryst. Res. Technol.

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Growth and characterization of ZnSe on Si by atomic layer epitaxy

Cited by 20 publications

References 15 publications

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium

Influence of substrate temperature on the properties of electron beam evaporated ZnSe films

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Growth and characterization of ZnSe on Si by atomic layer epitaxy

Cited by 20 publications

References 15 publications

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb2Te3 and GeTe from (Et3Si)2Te and Chlorides

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb2Te3 and GeTe from (Et3Si)2Te and Chlorides

Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium

Influence of substrate temperature on the properties of electron beam evaporated ZnSe films

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In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides

In Situ Reaction Mechanism Studies on Atomic Layer Deposition of Sb₂Te₃ and GeTe from (Et₃Si)₂Te and Chlorides